DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGY883
860 MHz, 15 dB gain push-pull
amplifier
Product specification
Supersedes data of 1997 Apr 14
2001 Oct 31
Philips Semiconductors Product specification
860 MHz, 15 dB gain push-pull amplifier BGY883
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
DESCRIPTION
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
page
2
351
Side view
Fig.1 Simplified outline.
789
Hybrid amplifier module designed for
CATV systems operating over a
frequency range of 40 to 860 MHz at
a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 14.5 15.5 dB
f = 860 MHz 15 − dB
I
tot
total current consumption (DC) VB=24V − 235 mA
MSA319
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Oct 31 2
Philips Semiconductors Product specification
860 MHz, 15 dB gain push-pull amplifier BGY883
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; T
=30°C; ZS=ZL=75Ω
case
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 14.5 − 15.5 dB
f = 860 MHz 15 −−dB
SL slope cable equivalent f = 40 to 860 MHz 0 − 2dB
FL flatness of frequency response f = 40 to 860 MHz −−±0.3 dB
s
11
input return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 18.5 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 640 MHz 15.5 −−dB
f = 640 to 860 MHz 14 −−dB
s
22
output return losses f = 40 to 80 MHz 20 −−dB
f = 80 to 160 MHz 18.5 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 640 MHz 15.5 −−dB
f = 640 to 860 MHz 14 −−dB
s
21
CTB composite triple beat 49 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−−61 dB
measured at 859.25 MHz
X
mod
cross modulation 49 channels flat; Vo= 44 dBmV;
−−−61 dB
measured at 55.25 MHz
CSO composite second order
distortion
d
2
V
o
second order distortion note 1 −−−68 dB
output voltage dim= −60 dB; note 2 58.5 60 − dBmV
49 channels flat; V
= 44 dBmV;
o
measured at 860.5 MHz
−−−61 dB
F noise figure f = 50 MHz −−6dB
f = 550 MHz −−7dB
f = 650 MHz −−7.5 dB
f = 750 MHz −−8dB
f = 860 MHz −−8.5 dB
I
tot
total current consumption (DC) note 3 −−235 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
2. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Oct 31 3