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DISCRETE SEMICONDUCTORS
DATA SH EET
BGY80; BGY81
CATV amplifier modules
Product specification
File under Discrete Semiconductors, SC16
Philips Semiconductors
February 1995
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Philips Semiconductors Product specification
CATV amplifier modules BGY80; BGY81
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• TiPtAu metallized crystals ensure
optimal reliability.
DESCRIPTION
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
page
2
351
Side view
Fig.1 Simplified outline.
789
Hybrid amplifier modules for CATV
systems operating over a frequency
range of 40 to 450 MHz at a voltage
supply of (DC). The BGY80 is
intended for use as a 12.5 dB
pre-amplifier and the BGY81 as a
12.5 dB final amplifier.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 12 − 13 dB
f = 450 MHz 12.5 − 14 dB
I
tot
total current consumption (DC) VB = 24 V
BGY80 − 180 200 mA
BGY81 − 220 240 mA
MSA319
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
February 1995 2