Philips BGY81, BGY80 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BGY80; BGY81

CATV amplifier modules

Product specification
File under Discrete Semiconductors, SC16

Philips Semiconductors

February 1995

Philips Semiconductors Product specification

CATV amplifier modules BGY80; BGY81

FEATURES

• Excellent linearity

• Extremely low noise

• Silicon nitride passivation

• Rugged construction

• TiPtAu metallized crystals ensure

optimal reliability.

DESCRIPTION

PINNING - SOT115J

PIN DESCRIPTION

1 input
2 common
3 common
5+V

B

7 common
8 common
9 output

page

2

351

Side view

Fig.1 Simplified outline.

789

Hybrid amplifier modules for CATV
systems operating over a frequency
range of 40 to 450 MHz at a voltage
supply of (DC). The BGY80 is
intended for use as a 12.5 dB
pre-amplifier and the BGY81 as a

12.5 dB final amplifier.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

G

p

power gain f = 50 MHz 12 − 13 dB

f = 450 MHz 12.5 − 14 dB

I

tot

total current consumption (DC) VB = 24 V

BGY80 − 180 200 mA
BGY81 − 220 240 mA

MSA319

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

i

T

stg

T

mb

RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C

February 1995 2