Philips BGY687 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGY687
600 MHz, 21.5 dB gain push-pull
amplifier
Product specification
Supersedes data of 1995 Sep 11
2001 Nov 08
Philips Semiconductors Product specification
600 MHz, 21.5 dB gain push-pull amplifier BGY687
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
DESCRIPTION
Hybrid high dynamic range amplifier module designed for
CATV systems operating over a frequency range of
40 to 600 MHz at a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 21 22 dB
f = 600 MHz 22 − dB
I
tot
total current consumption (DC) VB=24V − 240 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 08 2
Philips Semiconductors Product specification
600 MHz, 21.5 dB gain push-pull amplifier BGY687
CHARACTERISTICS
Bandwidth 40 to 600 MHz; T
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f =50 MHz 21 22 dB
SL slope cable equivalent f = 40 to 600 MHz 0.8 2.2 dB
FL flatness of frequency response f = 40 to 600 MHz −±0.2 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 20 − dB
output return losses f = 40 to 80 MHz 20 − dB
phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 85 channels flat;
X
mod
cross modulation 85 channels flat;
CSO composite second order distortion 85 channels flat;
d
2
V
o
second order distortion note 1 −−66 dB
output voltage dim= −60 dB; note 2 58 − dBmV
NF noise figure f = 600 MHz − 6.5 dB
I
tot
total current consumption (DC) note 3 − 240 mA
=30°C; ZS=ZL=75Ω.
case
f = 600 MHz 22 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 600 MHz 18 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 550 MHz 18 − dB
f = 550 to 600 MHz 16 − dB
−−54 dB
V
= 44 dBmV;
o
measured at 595.25 MHz
−−54 dB
Vo= 44 dBmV;
measured at 55.25 MHz
−−52 dB
V
= 44 dBmV;
o
measured at 596.5 MHz
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV; fq= 541.25 MHz; Vq= 44 dBmV; measured at fp+fq= 596.5 MHz.
p
2. fp= 590.25 MHz; Vp=Vo; fq= 597.25 MHz; Vq=Vo−6 dB; fr= 599.25 MHz; Vr=Vo−6 dB; measured at
fp+fq−fr= 588.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 08 3
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