Philips BGY66B Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BGY66B

CATV amplifier module

Product specification
Supersedes data of 1995 Sep 11
File under Discrete Semiconductors, SC16

1997 Apr 14

Philips Semiconductors Product specification

CATV amplifier module BGY66B

FEATURES

• Excellent linearity

• Extremely low noise

• Silicon nitride passivation

• Rugged construction

• Gold metallization ensures

excellent reliability.

APPLICATIONS

• Intended as a reverse amplifier for
use in two-way systems.

DESCRIPTION

Hybrid high dynamic range amplifier
module designed for applications in
CATV systems with a bandwidth of
5 to 120 MHz operating with a
voltage supply of 24 V (DC).

QUICK REFERENCE DATA

PINNING - SOT115J

PIN DESCRIPTION

1 input
2 common
3 common
5+V

B

7 common
8 common
9 output

page

2

351

Side view

Fig.1 Simplified outline.

789

MSA319

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

I

tot

power gain f = 10 MHz 24.5 25.5 dB
total current consumption (DC) VB= 24 V 115 135 mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

i

T

stg

T

mb

RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C

1997 Apr 14 2

Philips Semiconductors Product specification

CATV amplifier module BGY66B

CHARACTERISTICS
Table 1 Bandwidth 5 to 120 MHz; V

= 24 V; Tmb=30°C; ZS=ZL=75Ω

B

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f = 10 MHz 24.5 25.5 dB
SL slope cable equivalent −0.2 +0.5 dB
FL flatness of frequency response −±0.2 dB
S

11

S

22

CTB composite triple beat 14 channels flat;

input return losses 20 − dB

output return losses 20 − dB

−−66 dB

V

= 48 dBmV;

o

measured at 67.25 MHz

X

mod

cross modulation 14 channels flat;

−−54 dB
Vo= 48 dBmV;
measured at 67.25 MHz

d

2

V

o

second order distortion note 1 −−70 dB

output voltage dim= −60 dB; note 2 60 − dBmV
F noise figure f = 120 MHz − 5dB
I

tot

total current consumption (DC) note 3 115 135 mA

Notes

1. f

= 55.25 MHz; Vp= 48 dBmV;

p

fq= 61.25 MHz; Vq= 48 dBmV;
measured at fp+fq= 116.5 MHz.

2. Measured according to DIN45004B:
fp= 111.25 MHz; Vp=Vo;
fq= 118.25 MHz; Vq=Vo−6 dB;
fr= 120.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 109.25 MHz.

3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.

1997 Apr 14 3