Philips BGY580 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
BGY580
CATV amplifier module
Product specification
Supersedes data of 1997 Apr 15
File under Discrete Semiconductors, SC16
1998 Feb 25
Philips Semiconductors Product specification
CATV amplifier module BGY580
FEATURES
• Excellent linearity
• Extreme low noise
• Silicon nitride passivation
• Rugged construction
• Optimal reliability ensured by
TiPtAu metallized crystals.
DESCRIPTION
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
PIN CONFIGURATION
page
2
Side view
789
351
Fig.1 Simplified outline.
MSA319
Hybrid amplifier module for CATV
systems operating over a frequency
range of 40 to 550 MHz at a voltage
supply of 24 V (DC). The BGY580 is
intended for use as a pre-amplifier.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 12 − 13 dB
f = 550 MHz 12.5 − 14.5 dB
I
tot
total current consumption (DC) VB=24V − 180 200 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
mounting base operating temperature −20 +100 °C
1998 Feb 25 2
Philips Semiconductors Product specification
CATV amplifier module BGY580
CHARACTERISTICS
Bandwidth 40 to 550 MHz; T
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 12 − 13 dB
SL slope cable equivalent f = 40 to 550 MHz 0.5 − 2dB
FL flatness of frequency response f = 40 to 550 MHz −−±0.2 dB
S
11
S
22
input return losses f = 40 to 80 MHz 20 −−dB
output return losses f = 40 to 80 MHz 20 −−dB
CTB composite triple beat 77 channels flat; V
X
mod
cross modulation 77 channels flat; Vo= 44 dBmV;
CSO composite second order distortion 77 channels flat; V
d
2
V
o
second order distortion note 1 −−−70 dB
output voltage dim= −60 dB; note 2 59 −−dBmV
F noise figure f = 550 MHz −−8.5 dB
I
tot
total current consumption (DC) VB= 24 V; note 3 − 180 200 mA
=30°C; ZS=ZL=75Ω
mb
f = 550 MHz 12.5 − 14.5 dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 550 MHz 18 −−dB
f = 80 to 160 MHz 19 −−dB
f = 160 to 550 MHz 18 −−dB
= 44 dBmV;
o
−−−52 dB
measured at 547.25 MHz
−−−59 dB
measured at 55.25 MHz
= 44 dBmV;
o
−−−56 dB
measured at 548.5 MHz
Notes
= 55.25 MHz; Vp= 44 dBmV; fq= 493.25 MHz; Vq= 44 dBmV;
1. f
p
measured at fp+fq= 548.5 MHz.
2. Measured according to DIN45004B;
fp= 540.25 MHz; Vp=Vo; fq= 547.25 MHz; Vq=Vp−6 dB; fr= 549.25 MHz; Vr=Vp−6 dB;
measured at fp+fq−fr= 538.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1998 Feb 25 3
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