Philips BGY280 User Manual

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D454

BGY280

UHF amplifier module

Preliminary specification 2000 Nov 15

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

FEATURES

• Dual band GSM amplifier

• 3.6 V nominal supply voltage

• 33.5 dBm output power for GSM1800

• 35.5 dBm output power for GSM900

• Easy output power control by DC voltage.

• Internal input and output matching.

APPLICATIONS

• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.

DESCRIPTION

The BGY280 is a power amplifier module in a SOT559A
leadless package with a plastic cap. The dimensions are

13.75 x 11 x 1.7 mm. The module consists of two

separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.

PINNING - SOT559A

PIN DESCRIPTION

1,2,3,6,9,10,11,14 Ground

4 RF output 2 (1800 MHz)
5V
7V

8 RF output 1 (900 MHz)
12 RF input 1 (900 MHz)
13 V
15 V
16 RF input 2 (1800 MHz)

123

16

15

14

13

12

11 10 9

Bottom view

Fig.1 Simplified outline

(1800 MHz)

S2

(900 MHz)

S1

(900 MHz)

C1

(1800 MHz)

C2

MBL031

4

5

6

7

8

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

Pulsed; δ =2:8

=25°C.

mb

f

(MHz)

V

(V)

S

V

C

(V)

P

L

(dBm)

G

p

(dB)

η

(%)

880 to 915 3.6 ≤2.2 typ. 35.5 typ. 35.5 47 50

1710 to 1785 3.6 ≤2.2 typ. 33.5 typ. 33.5 40 50

Z

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

=0; RFIN=off − 7V

, V

V

S1

S2

V

, V

C1

C2

P

, P

D1

D2

P

L1

P

L2

T

stg

T

mb

DC supply voltage

DC control voltage − 3V
input drive power − 10 mW
load power 1 − 4W
load power 2 − 3W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C

C1,2

V

> 0.5 V; RFIN=on − 5.5 V

C1,2

, Z

S

(Ω)

L

2000 Nov 15 2

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

CHARACTERISTICS

Z
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.

S=ZL

=50Ω; P

=0dBm; VS1=VS2= 3.6 V; V

D1,2

≤ 2.2 V; Tmb=25°C; tp= 575 µs; δ =2:8;

C1,2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

L

I

, I

CM1

P

L1

P

L2

G

P1

G

P2

η

1

η

2

H

, H

2

VSWR

leakage current V
peak control current −−2mA

CM2

load power GSM 900

load power GSM 1800

=0.2V −−10 µA

C1,2

V

= 2.2 V 34.5 35.5 − dBm

C1

V

= 2.2 V; VS1=3.2V; Tmb=25°C34 35 − dBm

C1

V

= 2.2 V 32.5 33.5 − dBm

C2

V

= 2.2 V; VS1=3.2V; Tmb=25°C32 33 − dBm

C2

power gain GSM900 PL1= 35.5 dBm − 35.5 − dB
power gain GSM1800 PL2=33dBm − 33.5 − dB
efficiency GSM900 PL1=35dBm 40 45 − %
efficiency GSM1800 PL2=32dBm 33 38 − %
harmonics GSM900 PL1=34dBm −−−40 dBc

3

harmonics GSM1800 P

input VSWR of active device

in

input VSWR of inactive

=32dBm −−−35 dBc

L2

V

= 3.2 to 5 V; PL1=34dBm;

S1,2

P

=32dBm

L2

= 3.2 to 5 V; V

V

S1,2

C1,2

≤ 0.5 V − 8:1

− 3:1

device
isolation GSM900 V
isolation GSM1800 V
second harmonic isolation

=0.5V; P

C1,2

=0.5V; P

C1,2

=35dBm −−21 −20 dBm

P

L1

=3dBm −−54 −37 dBm

D1,2

=3dBm −−42 −37 dBm

D1,2

from GSM900 into GSM1800
maximum slope −5dBm< P

t

r

carrier rise time PL1= 6 to 34 dBm; PL2=4to32dBm;

L1,2<PLmax

time to settle within −0.5 dB of final P

t

f

carrier fall time PL1= 6 to 34 dBm; PL2=4to32dBm;

120 − 200 dB/V

− 1.5 2 µs

L

− 1.5 2 µs

time to fall below −37 dBm
P

≤ 34 dBm; bandwidth = 100 kHz;

L1

D1,2

= 897.5 MHz

c

= 897.5 MHz

c

= 1747.5 MHz

c

=5.4%

noise power GSM900

P

n

noise power GSM1800 P

f = 925 - 935 MHz; f
P

≤ 34 dBm; bandwidth = 100 kHz;

L1

f = 935 - 960 MHz; f

≤ 32 dBm; bandwidth = 100 kHz;

L2

f = 1805 - 1880 MHz; f

AM/PM conversion P

AM/AM conversion

= −0.5to0.5dBm;

D1,2

P

= constant during measurement

L1,2

= 6 to 34 dBm and

for P

L1

P

= 4 to 32 dBm

L2

P

= 6 to 34 dBm; PL2=4to32dBm;

L1

f = 100 kHz; P

−−−71 dBm

−−82 −80 dBm

−−80 −73 dBm

−−6 deg/dB

− 25 %

2000 Nov 15 3

Philips Semiconductors Preliminary specification

Fig.2 Load power as a function of control voltage;

typical values.

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;
T

mb

=25°C; δ =2:8; tp= 575 µs.

UHF amplifier module BGY280

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TX/RX conversion PL1=34dBm; f= 915 MHz

(925 MHz) / PD (905 MHz)

P

L1

P

=32dBm; f= 1785 MHz

L2

P

(1765 MHz) / PD (1805 MHz)

L2

control bandwidth P
stability V

= 6 to 34 dBm; PL2= 4 to 32 dBm; 1 1.5 − MHz

L1

= 3.2 to 5 V; VC= 0 to 2.2 V;

S1,2

P

=0to3dBm; PL1<34.8dBm;

D1,2

P

< 32.5 dBm;

L2

VSWR ≤ 6 : 1 through all phases

ruggedness V

=5V; P

S1,2

P

= 34.8 dBm; PL2= 32.5 dBm;

L1

=0to3dBm;

D1,2

VSWR ≤ 6 : 1 through all phases

= 4.2 V; P

V

S1,2

P

= 34.8 dBm; PL2= 32.5 dBm;

L1

=0to3dBm;

D1,2

VSWR ≤ 10 : 1 through all phases

− 25 − dB

−−−60 dBc

no degradation

no degradation

40

P

L

(dBm)

35

30

25

20

11.522.5

2000 Nov 15 4

897.5MHz

1747.5MHz

V

50

η

(%)

40

30

20

10

0

(V)

C

20 25 30 35 40

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;

=25°C; δ =2:8; tp= 575 µs.

T

mb

1785MHz

1710MHz

915MHz

880MHz

P

L

(dBm)

Fig.3 Efficiency as a function of load power;

typical values.

Philips Semiconductors Preliminary specification

Fig.4 Second harmonic as a function of load

power; typical values.

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;
T

mb

=25°C; δ =2:8; tp= 575 µs.

915

0

10

20

30

40

10 20 30 40

P

L

(dBm)

gain
(dB)

(6)

(4)
(5)

(3)

(1)
(2)

small signal gain

Fig.6 Gain as a function of load power; typical

values.

ZS=ZL=50Ω; PD=0dBm; VS=3.6V;Tmb=25°C;
f

c

= 1747.5 MHz; δ = 2 : 8; t p=575µs.
(1) f = 1805 MHz (4) f = 1615 MHz
(2) f = 1842.5 MHz (5) f = 1625.5 MHz
(3) f = 1880 MHz (6) f = 1690 MHz

UHF amplifier module BGY280

-20

H

2

(dBc)

-30

-40

1710MHz

-50

1785MHz

-60
20 25 30 35 40

915MHz
880MHz

P

(dBm)

L

-20

H

3

(dBc)

-30

-40

MHz

880MHz

1785MHz

-50

1710MHz

-60
20 25 30 35 40

P

(dBm)

L

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;

=25°C; δ =2:8; tp= 575 µs.

T

mb

Fig.5 Third harmonic as a function of load power;

typical values.

conversi on gain

2000 Nov 15 5

40

gain
(dB)

30

(1)

(2)

(3)

small signal gain

20

conversion gain

10

(4)
(5)

(6)

0

10 20 30 40

P

(dBm)

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;

=25°C; fc=897.5MHz; δ = 2 : 8; t p= 575 µs.

T

mb

(1) f = 925 MHz (4) f = 835 MHz
(2) f = 942.5 MHz (5) f = 852.5 MHz
(3) f = 960 MHz (6) f = 870 MHz

Fig.7 Gain as a function of load power; typical

values.

L

Philips Semiconductors Preliminary specification

Fig.8 Output amplitude modulation as a function

of load power; typical values.

ZS=ZL=50Ω; VS=3.6V; PD=0dBm; Tmb=25°C;

∆f = 100 kHz; input amplitud e modulation = 5.4%; δ =2:8; t

p

=575µs.

Fig.10 Noise as a function of load power;

typical values.

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;
T

mb

=25°C; δ =2:8; tp= 575 µs.

UHF amplifier module BGY280

40

output

AM
(%)

30

20

10

1800MHz

0

0 10203040

900MHz

P

L

(dBm)

8

AM-PM

(deg/dB)

6

4

2

0

-10 0 10 20 30 40

ZS=ZL=50Ω; VS=3.6V; PD=0dBm; Tmb=25°C;

δ =2:8; t

=575µs.

p

1800MHz

900MHz

P

(dBm)

L

Fig.9 Output phase at PD= +0.5 dBm, relatively

to output phase at P

= −0.5 dBm;

D

typical values.

-60

noise

(dBm)

-70

-80

-90

-100
0 10203040

2000 Nov 15 6

RX=1845MHz

RX=942.5MHz

P

L

(dBm)

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

RF input RF output

Z

2

Z

3

V

S

BGY280

12

GSM900

V

C

V

C

Z

13

15

16

1

GSM1800

8

7

5

4

Z

4

RF outputRF input

V

S

Fig.11 Test circuit

List of components (See Fig 10 and 11)

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE NO.

, C

C

1

4

C

, C

2

3

Z

, Z2, Z3, Z

1

R1, R

2

multilayer ceramic chip capacitor 100 µF; 40 V
electrolytic capacitor 100 nF
stripline; note 1 50 Ω width 2.33 mm

4

metal film resistor 100 Ω; 0.6 W 2322 156 11001

Note

1. The striplines are on a double copper-clad printed-circuit board with PTFE fibreglass dielectric (ε
thickness

1

⁄32inch.

=2.2);

r

2000 Nov 15 7

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

Fig.12 PCB testcircuit

2000 Nov 15 8

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

PACKAGE OUTLINE SOT559A

Leadless surface mounted package; plastic cap; 16 terminations

L1 (4×)
L (12×) b (12×)

16

L

2

b

4

(4×)

(4×)

15

b

2

14

(2×)

b7 (4×)

13

b8 (4×)

12

e

1

123

11

e

1

10 9

b1 (2×)b

D

D

1

b6 (4×)

(4×)b3 (4×)

5

L3 (4×)

4

5

e

6

e

7

8

c

Z

5

(4×)

e

2

Z1 (2×)

e

2

Z8 (6×)

A

Z6 (12×)

Z (2×)

Z4 (12×)

Z7 (6×)

Z2 (2×)

Dimensions solderresist

SOT559A

Z

3

(2×)

E

E

1

pin 1 index

Z

Z

Z

Z

Z

Z

Z

3.8

3.6

L

1.6

1.4

Z

7

8

1.5

1.3

Z

3

2.6

2.4

0 5 10 mm

DIMENSIONS (mm are the original dimensions)

A

UNIT

mm

1.9

1.5

OUTLINE
VERSION

SOT559A

bb

1.1

0.9

3.5

3.3

b

b

b

4.2

4.0

b

4

5

1.2

1.0

1

2

3

2.9

5.275

2.7

5.075

IEC JEDEC EIAJ

scale

b

6

0.625

0.425

REFERENCES

b

0.8

0.6

1

2

3

4

5

6

2.5

3.5

2.9

1.1

1.5

2.3

3.3

2.7

0.9

b

7

8

0.9

0.7

c

0.55

0.45

D

14.05

13.45

D

Ee

11.3

10.7

E

1

10.85

10.55

1

13.6

13.3

e

e2L

1

2.6 4.4

3.3

EUROPEAN

PROJECTION

1.1

0.9

1.3

L

1.6

1.4

1

1.1

0.9

L

2

0.6

0.4

ISSUE DATE

00-01-31
00-09-28

2000 Nov 15 9

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

DATA SHEET STATUS

DATA SHEET STATUS

Objective specification Development This data sheet contains the design target or goal specifications for

Preliminary specification Qualification This data sheet contains preliminary data, and supplementary data will be

Product specification Production This data sheet contains final specifications. Philips Semiconductors

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.

PRODUCT

STATUS

DEFINITIONS

product development. Specification may change in any manner without
notice.

published at a later date. Philips Semiconductors reserves the right to
make changes at any time without notice in order to improve design and
supply the best possible product.

reserves the right to make changes at any time without notice in order to
improve design and supply the best possible product.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
the use of any of these products, conveys no licence or title
under any patent, copyright, or mask work right to these
products, and makes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

(1)

2000 Nov 15 10

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under patent- or other industrial or intellectual property rights.

2000

Internet: http://www.semiconductors.philips.com

70

Printed in The Netherlands budgetnum/printrun/ed/pp11 Date of release: 2000 Nov 15 Document order number: 9397 750 07748