Philips BGY280 User Manual

DISCRETE SEMICONDUCTORS

DATA SHEET

M3D454

BGY280

UHF amplifier module

Preliminary specification 2000 Nov 15

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

FEATURES

• Dual band GSM amplifier

• 3.6 V nominal supply voltage

• 33.5 dBm output power for GSM1800

• 35.5 dBm output power for GSM900

• Easy output power control by DC voltage.

• Internal input and output matching.

APPLICATIONS

• Digital cellular radio systems with Time Division Multiple Access (TDMA) operation (GSM systems) in two frequency bands: 880 to 915 MHz and 1710 to 1785 MHz.

DESCRIPTION

The BGY280 is a power amplifier module in a SOT559A leadless package with a plastic cap. The dimensions are

13.75 x 11 x 1.7 mm. The module consists of two

separated line-ups. One for GSM900 and one for GSM1800. Internal power control, input and output matching.

PINNING - SOT559A

PIN DESCRIPTION

1,2,3,6,9,10,11,14 Ground

4 RF output 2 (1800 MHz) 5V 7V

8 RF output 1 (900 MHz) 12 RF input 1 (900 MHz) 13 V 15 V 16 RF input 2 (1800 MHz)

123

16

15

14

13

12

11 10 9

Bottom view

Fig.1 Simplified outline

(1800 MHz)

S2

(900 MHz)

S1

(900 MHz)

C1

(1800 MHz)

C2

MBL031

4

5

6

7

8

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

Pulsed; δ =2:8

=25°C.

mb

f

(MHz)

V

(V)

S

V

C

(V)

P

L

(dBm)

G

p

(dB)

η

(%)

880 to 915 3.6 ≤2.2 typ. 35.5 typ. 35.5 47 50

1710 to 1785 3.6 ≤2.2 typ. 33.5 typ. 33.5 40 50

Z

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

=0; RFIN=off − 7V

, V

V

S1

S2

V

, V

C1

C2

P

, P

D1

D2

P

L1

P

L2

T

stg

T

mb

DC supply voltage

DC control voltage − 3V input drive power − 10 mW load power 1 − 4W load power 2 − 3W storage temperature −40 +100 °C operating mounting base temperature −30 +100 °C

C1,2

V

> 0.5 V; RFIN=on − 5.5 V

C1,2

, Z

S

(Ω)

L

2000 Nov 15 2

Philips Semiconductors Preliminary specification

UHF amplifier module BGY280

CHARACTERISTICS

Z f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.

S=ZL

=50Ω; P

=0dBm; VS1=VS2= 3.6 V; V

D1,2

≤ 2.2 V; Tmb=25°C; tp= 575 µs; δ =2:8;

C1,2

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

L

I

, I

CM1

P

L1

P

L2

G

P1

G

P2

η

1

η

2

H

, H

2

VSWR

leakage current V peak control current −−2mA

CM2

load power GSM 900

load power GSM 1800

=0.2V −−10 µA

C1,2

V

= 2.2 V 34.5 35.5 − dBm

C1

V

= 2.2 V; VS1=3.2V; Tmb=25°C34 35 − dBm

C1

V

= 2.2 V 32.5 33.5 − dBm

C2

V

= 2.2 V; VS1=3.2V; Tmb=25°C32 33 − dBm

C2

power gain GSM900 PL1= 35.5 dBm − 35.5 − dB power gain GSM1800 PL2=33dBm − 33.5 − dB efficiency GSM900 PL1=35dBm 40 45 − % efficiency GSM1800 PL2=32dBm 33 38 − % harmonics GSM900 PL1=34dBm −−−40 dBc

3

harmonics GSM1800 P

input VSWR of active device

in

input VSWR of inactive

=32dBm −−−35 dBc

L2

V

= 3.2 to 5 V; PL1=34dBm;

S1,2

P

=32dBm

L2

= 3.2 to 5 V; V

V

S1,2

C1,2

≤ 0.5 V − 8:1

− 3:1

device isolation GSM900 V isolation GSM1800 V second harmonic isolation

=0.5V; P

C1,2

=0.5V; P

C1,2

=35dBm −−21 −20 dBm

P

L1

=3dBm −−54 −37 dBm

D1,2

=3dBm −−42 −37 dBm

D1,2

from GSM900 into GSM1800 maximum slope −5dBm< P

t

r

carrier rise time PL1= 6 to 34 dBm; PL2=4to32dBm;

L1,2<PLmax

time to settle within −0.5 dB of final P

t

f

carrier fall time PL1= 6 to 34 dBm; PL2=4to32dBm;

120 − 200 dB/V

− 1.5 2 µs

L

− 1.5 2 µs

time to fall below −37 dBm P

≤ 34 dBm; bandwidth = 100 kHz;

L1

D1,2

= 897.5 MHz

c

= 897.5 MHz

c

= 1747.5 MHz

c

=5.4%

noise power GSM900

P

n

noise power GSM1800 P

f = 925 - 935 MHz; f P

≤ 34 dBm; bandwidth = 100 kHz;

L1

f = 935 - 960 MHz; f

≤ 32 dBm; bandwidth = 100 kHz;

L2

f = 1805 - 1880 MHz; f

AM/PM conversion P

AM/AM conversion

= −0.5to0.5dBm;

D1,2

P

= constant during measurement

L1,2

= 6 to 34 dBm and

for P

L1

P

= 4 to 32 dBm

L2

P

= 6 to 34 dBm; PL2=4to32dBm;

L1

f = 100 kHz; P

−−−71 dBm

−−82 −80 dBm

−−80 −73 dBm

−−6 deg/dB

− 25 %

2000 Nov 15 3

Philips Semiconductors Preliminary specification

Fig.2 Load power as a function of control voltage;

typical values.

ZS=ZL=50Ω; VS=3.6V; PD=0dBm; T

mb

=25°C; δ =2:8; tp= 575 µs.

UHF amplifier module BGY280

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

TX/RX conversion PL1=34dBm; f= 915 MHz

(925 MHz) / PD (905 MHz)

P

L1

P

=32dBm; f= 1785 MHz

L2

P

(1765 MHz) / PD (1805 MHz)

L2

control bandwidth P stability V

= 6 to 34 dBm; PL2= 4 to 32 dBm; 1 1.5 − MHz

L1

= 3.2 to 5 V; VC= 0 to 2.2 V;

S1,2

P

=0to3dBm; PL1<34.8dBm;

D1,2

P

< 32.5 dBm;

L2

VSWR ≤ 6 : 1 through all phases

ruggedness V

=5V; P

S1,2

P

= 34.8 dBm; PL2= 32.5 dBm;

L1

=0to3dBm;

D1,2

VSWR ≤ 6 : 1 through all phases

= 4.2 V; P

V

S1,2

P

= 34.8 dBm; PL2= 32.5 dBm;

L1

=0to3dBm;

D1,2

VSWR ≤ 10 : 1 through all phases

− 25 − dB

−−−60 dBc

no degradation

40

P

L

(dBm)

35

30

25

20

11.522.5

2000 Nov 15 4

897.5MHz

1747.5MHz

V

50

η

(%)

40

30

20

10

0

(V)

C

20 25 30 35 40

ZS=ZL=50Ω; VS=3.6V; PD=0dBm;

=25°C; δ =2:8; tp= 575 µs.

T

mb

1785MHz

1710MHz

915MHz

880MHz

P

L

(dBm)

Fig.3 Efficiency as a function of load power;

typical values.