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DISCRETE SEMICONDUCTORS
DATA SHEET
M3D454
BGY280
UHF amplifier module
Preliminary specification 2000 Nov 15
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Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
FEATURES
• Dual band GSM amplifier
• 3.6 V nominal supply voltage
• 33.5 dBm output power for GSM1800
• 35.5 dBm output power for GSM900
• Easy output power control by DC voltage.
• Internal input and output matching.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in two
frequency bands: 880 to 915 MHz and
1710 to 1785 MHz.
DESCRIPTION
The BGY280 is a power amplifier module in a SOT559A
leadless package with a plastic cap. The dimensions are
13.75 x 11 x 1.7 mm. The module consists of two
separated line-ups. One for GSM900 and one for
GSM1800. Internal power control, input and output
matching.
PINNING - SOT559A
PIN DESCRIPTION
1,2,3,6,9,10,11,14 Ground
4 RF output 2 (1800 MHz)
5V
7V
8 RF output 1 (900 MHz)
12 RF input 1 (900 MHz)
13 V
15 V
16 RF input 2 (1800 MHz)
123
16
15
14
13
12
11 10 9
Bottom view
Fig.1 Simplified outline
(1800 MHz)
S2
(900 MHz)
S1
(900 MHz)
C1
(1800 MHz)
C2
MBL031
4
5
6
7
8
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
Pulsed; δ =2:8
=25°C.
mb
f
(MHz)
V
(V)
S
V
C
(V)
P
L
(dBm)
G
p
(dB)
η
(%)
880 to 915 3.6 ≤2.2 typ. 35.5 typ. 35.5 47 50
1710 to 1785 3.6 ≤2.2 typ. 33.5 typ. 33.5 40 50
Z
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
=0; RFIN=off − 7V
, V
V
S1
S2
V
, V
C1
C2
P
, P
D1
D2
P
L1
P
L2
T
stg
T
mb
DC supply voltage
DC control voltage − 3V
input drive power − 10 mW
load power 1 − 4W
load power 2 − 3W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C
C1,2
V
> 0.5 V; RFIN=on − 5.5 V
C1,2
, Z
S
(Ω)
L
2000 Nov 15 2
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Philips Semiconductors Preliminary specification
UHF amplifier module BGY280
CHARACTERISTICS
Z
f = 880 to 915 MHz (GSM900); f = 1710 to 1785 MHz (GSM1800); unless otherwise specified.
S=ZL
=50Ω; P
=0dBm; VS1=VS2= 3.6 V; V
D1,2
≤ 2.2 V; Tmb=25°C; tp= 575 µs; δ =2:8;
C1,2
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
L
I
, I
CM1
P
L1
P
L2
G
P1
G
P2
η
1
η
2
H
, H
2
VSWR
leakage current V
peak control current −−2mA
CM2
load power GSM 900
load power GSM 1800
=0.2V −−10 µA
C1,2
V
= 2.2 V 34.5 35.5 − dBm
C1
V
= 2.2 V; VS1=3.2V; Tmb=25°C34 35 − dBm
C1
V
= 2.2 V 32.5 33.5 − dBm
C2
V
= 2.2 V; VS1=3.2V; Tmb=25°C32 33 − dBm
C2
power gain GSM900 PL1= 35.5 dBm − 35.5 − dB
power gain GSM1800 PL2=33dBm − 33.5 − dB
efficiency GSM900 PL1=35dBm 40 45 − %
efficiency GSM1800 PL2=32dBm 33 38 − %
harmonics GSM900 PL1=34dBm −−−40 dBc
3
harmonics GSM1800 P
input VSWR of active device
in
input VSWR of inactive
=32dBm −−−35 dBc
L2
V
= 3.2 to 5 V; PL1=34dBm;
S1,2
P
=32dBm
L2
= 3.2 to 5 V; V
V
S1,2
C1,2
≤ 0.5 V − 8:1
− 3:1
device
isolation GSM900 V
isolation GSM1800 V
second harmonic isolation
=0.5V; P
C1,2
=0.5V; P
C1,2
=35dBm −−21 −20 dBm
P
L1
=3dBm −−54 −37 dBm
D1,2
=3dBm −−42 −37 dBm
D1,2
from GSM900 into GSM1800
maximum slope −5dBm< P
t
r
carrier rise time PL1= 6 to 34 dBm; PL2=4to32dBm;
L1,2<PLmax
time to settle within −0.5 dB of final P
t
f
carrier fall time PL1= 6 to 34 dBm; PL2=4to32dBm;
120 − 200 dB/V
− 1.5 2 µs
L
− 1.5 2 µs
time to fall below −37 dBm
P
≤ 34 dBm; bandwidth = 100 kHz;
L1
D1,2
= 897.5 MHz
c
= 897.5 MHz
c
= 1747.5 MHz
c
=5.4%
noise power GSM900
P
n
noise power GSM1800 P
f = 925 - 935 MHz; f
P
≤ 34 dBm; bandwidth = 100 kHz;
L1
f = 935 - 960 MHz; f
≤ 32 dBm; bandwidth = 100 kHz;
L2
f = 1805 - 1880 MHz; f
AM/PM conversion P
AM/AM conversion
= −0.5to0.5dBm;
D1,2
P
= constant during measurement
L1,2
= 6 to 34 dBm and
for P
L1
P
= 4 to 32 dBm
L2
P
= 6 to 34 dBm; PL2=4to32dBm;
L1
f = 100 kHz; P
−−−71 dBm
−−82 −80 dBm
−−80 −73 dBm
−−6 deg/dB
− 25 %
2000 Nov 15 3
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Philips Semiconductors Preliminary specification
Fig.2 Load power as a function of control voltage;
typical values.
ZS=ZL=50Ω; VS=3.6V; PD=0dBm;
T
mb
=25°C; δ =2:8; tp= 575 µs.
UHF amplifier module BGY280
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
TX/RX conversion PL1=34dBm; f= 915 MHz
(925 MHz) / PD (905 MHz)
P
L1
P
=32dBm; f= 1785 MHz
L2
P
(1765 MHz) / PD (1805 MHz)
L2
control bandwidth P
stability V
= 6 to 34 dBm; PL2= 4 to 32 dBm; 1 1.5 − MHz
L1
= 3.2 to 5 V; VC= 0 to 2.2 V;
S1,2
P
=0to3dBm; PL1<34.8dBm;
D1,2
P
< 32.5 dBm;
L2
VSWR ≤ 6 : 1 through all phases
ruggedness V
=5V; P
S1,2
P
= 34.8 dBm; PL2= 32.5 dBm;
L1
=0to3dBm;
D1,2
VSWR ≤ 6 : 1 through all phases
= 4.2 V; P
V
S1,2
P
= 34.8 dBm; PL2= 32.5 dBm;
L1
=0to3dBm;
D1,2
VSWR ≤ 10 : 1 through all phases
− 25 − dB
−−−60 dBc
no degradation
no degradation
40
P
L
(dBm)
35
30
25
20
11.522.5
2000 Nov 15 4
897.5MHz
1747.5MHz
V
50
η
(%)
40
30
20
10
0
(V)
C
20 25 30 35 40
ZS=ZL=50Ω; VS=3.6V; PD=0dBm;
=25°C; δ =2:8; tp= 575 µs.
T
mb
1785MHz
1710MHz
915MHz
880MHz
P
L
(dBm)
Fig.3 Efficiency as a function of load power;
typical values.