Philips BGY241 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

ndbook, halfpage

M3D373

BGY241

UHF amplifier module

Product specification
Supersedes data of 1999 May 01

1999 Sep 09

Philips Semiconductors Product specification

UHF amplifier module BGY241

FEATURES

• 3.5 V nominal supply voltage

• 35 dBm output power

• Easy output power control by DC voltage.

APPLICATIONS

• Digital cellularradio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.

DESCRIPTION

The BGY241 is a three-stage UHF amplifier module in a
SOT482C leadless package with a plastic cover.
The module consists of one NPN silicon planar transistor
die and one bipolar monolithic integrated circuit mounted
together with matching and bias circuit components on a
metallized ceramic substrate.

QUICK REFERENCE DATA

RF performance at Tmb=25°C.

PINNING - SOT482C

PIN DESCRIPTION

1 RF input
2V
3V

C
S

4 RF output
5 ground

handbook, halfpage

43 251

Bottom view

Fig.1 Simplified outline.

MBK201

MODE OF

OPERATION

f

(MHz)

V

(V)

S

V

C

(V)

P

L

(dBm)

G

(dB)

p

η

(%)

ZS;Z

(Ω)

Pulsed; δ = 1 : 8 880 to 915 3.5 ≤2.2 35.2 ≥35.2 typ. 43 50

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

V

C

P

D

P

L

T

stg

T

mb

DC supply voltage VC= 0; PD=0mW − 7V

V

≥0.2 V − 5.5 V

C

DC control voltage − 2.7 V
input drive power − 10 dBm
load power − 36 dBm
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

L

1999 Sep 09 2

Philips Semiconductors Product specification

UHF amplifier module BGY241

CHARACTERISTICS

ZS=ZL=50Ω; PD= 0 dBm; VS= 3.5 V; VC≤ 2.2 V; f = 880 to 915 MHz; Tmb=25°C; δ = 1 : 8; tp= 575 µs;
unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

Q

I

CM

P

L

G

p

η efficiency P
H

2

H

3

VSWR

in

P

n

t

r

t

f

leakage current VC= 0.2 V; PD=0mW −−10 µA

V

=7V; VC= 0; PD=0mW − 620mA

S

peak control current PL= 35.2 dBm −−3mA
load power VC= 2.2 V 35.2 35.5 − dBm

V

=3V; VC= 2.2 V;

S

33.6 −−dBm

Tmb= −20 to +85 °C

power gain PL= 35.2 dBm − 35.2 − dB

= 34 dBm 35 42 − %

L

second harmonic PL= 35.2 dBm −−50 −38 dBc
third harmonic PL= 35.2 dBm −−53 −40 dBc
input VSWR PL=5to35dBm −−3:1
stability V

=3to5V; PD=−3 to +3 dBm;

S

−−−60 dBc
VC= 0 to 2.2 V; PL≤ 35.2 dBm;
VSWR ≤ 6 : 1 through all phases

isolation V

= 0.5 V; PD= 3 dBm −−43 −37 dBm

C

control bandwidth 1.5 −−MHz
control slope PL= −5to+5dBm − 240 − dB/V
noise power PL= 5 to 35.2 dBm;

−−76 −75 dBm
bandwidth = 100 kHz;
20 MHz above transmitter band

AM/AM conversion P

= 3% AM; f = 100 kHz;

D

− 12 14 %
PL= 5 to 35.2 dBm

AM/PM conversion P

= −0.5 to +0.5 dBm;

D

−−2 deg
PL= 5 to 35.2 dBm

T

conversion PL= 35.2 dBm; f = 915 MHz;

X/RX

− 25 30 dB
PL(925 MHz)/PD(905 MHz)

carrier rise time PL= 6 to 34 dBm; timeto settle within

−0.5 dB of final P

L

carrier fall time PL= 6 to 34 dBm; timeto settle within

ruggedness V

−0.5 dB of final P

=5V; PL= 34.8 dBm;

S

L

− 1.5 2 µs

− 1.5 2 µs

no degradation

VSWR ≤ 12 : 1 through all phases

= 4.5 V; VC= 2.3 V;

V

S

no degradation

VSWR ≤ 5 : 1 through all phases

1999 Sep 09 3

Philips Semiconductors Product specification

UHF amplifier module BGY241

handbook, halfpage

4

P

L

(W)

3

2

1

0

1 1.5 2.5

ZS=ZL=50Ω; VS= 3.5 V; PD= 1 mW;
Tmb=25°C; δ= 1 : 8; tp= 575 µs.

2

MGS648

880 MHz
915 MHz

VC (V)

Fig.2 Load power as a function of control voltage;

typical values.

880 MHz
915 MHz

5

VS (V)

MGS649

handbook, halfpage

8

P

L

(W)

6

4

2

0

234 6

ZS=ZL=50Ω; VC= 2.2 V; PD= 1 mW;
Tmb=25°C; δ = 1 : 8; tp= 575 µs.

Fig.3 Load poweras afunction of supplyvoltage;

typical values.

50

handbook, halfpage

η

(%)

40

30

20

10

0

05

ZS=ZL=50Ω; VS= 3.5 V; PD= 1 mW;
Tmb=25°C; δ= 1 : 8; tp= 575 µs.

1234

915 MHz

880 MHz

PL (W)

Fig.4 Efficiency as a function of load power;

typical values.

MGS650

handbook, halfpage

5

P

L

(W)

4

3

2

1

0

880 890 900 920910

ZS=ZL=50Ω; VS= 3.5 V; PD= 1 mW; VC= 2.2 V;
Tmb=25°C; δ= 1 : 8; tp= 575 µs.

f (MHz)

Fig.5 Load power as a function of frequency;

typical values.

MGS651

1999 Sep 09 4