Philips BGY206 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D369
BGY206
UHF amplifier module
Product specification
Supersedes data of 1998 Apr 15
1998 May 08
Philips Semiconductors Product specification
UHF amplifier module BGY206
FEATURES
• 4.8 V nominal supply voltage
• 3 W output power
• Easy control of output power by DC voltage.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY206 is a three-stage UHF amplifier module in a
SOT388B package. The module consists of three NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
PINNING - SOT388B
PIN DESCRIPTION
1 RF input
2V
3V
C
S
4 RF output
Flange ground
handbook, halfpage
1234
Top view
Fig.1 Simplified outline.
MBK197
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C.
mb
f
(MHz)
V
(V)
S
V
C
(V)
P
(W)
L
G
p
(dB)
η
(%)
Pulsed; δ = 1 : 8 880 to 915 4.8 ≤3.5 3 ≥30 typ. 45 50
ZS; Z
(Ω)
L
1998 May 08 2
Philips Semiconductors Product specification
UHF amplifier module BGY206
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
CHARACTERISTICS
Z
=50Ω;PD= 3 mW; VS= 4.8 V; VC≤ 3.5 V; f = 880 to 915 MHz; Tmb=25°C; δ = 1 : 8; tp= 575 µs;
S=ZL
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
Q
I
C
P
L
G
p
η efficiency adjust V
H
2
H
3
VSWR
in
P
n
DC supply voltage VC< 0.5 V − 10 V
DC control voltage − 4V
input drive power − 13 mW
load power − 3.5 W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C
leakage current VC= 0.5 V −−100 µA
control current adjust VCfor PL=3W −−500 µA
load power VC= 3.5 V 3 −−W
V
= 3.5 V; VS= 4.3 V; Tmb=85°C2 −−W
C
power gain adjust VCfor PL=3W 30 −−dB
for PL=3W 40 45 − %
C
second harmonic adjust VCfor PL=3W −−−40 dBc
third harmonic adjust VCfor PL=3W −−−40 dBc
input VSWR adjust VCfor PL=3W −−2.5:1
stability P
= 1.5 to 6 mW; VS=4to6.5V;
D
−−−60 dBc
VC= 0 to 3.5 V; PL≤ 3W;
VSWR ≤ 6 : 1 through all phases
isolation V
= 0.5 V −−−36 dBm
C
control bandwidth 1 −−MHz
noise power PL= 3 W; bandwidth = 30 kHz;
−−−85 dBm
20 MHz above transmission band
ruggedness V
= 6.5 V; adjust VCfor PL=3W;
S
no degradation
VSWR ≤ 10 : 1 through all phases
1998 May 08 3
Philips Semiconductors Product specification
UHF amplifier module BGY206
50
handbook, halfpage
P
L
(dBm)
30
880 MHz
915 MHz
10
-10
-30
1.2 1.6 3.63.2
ZS=ZL=50Ω; VS= 4.8V; PD= 3 mW;
Tmb=25°C; δ= 1: 8; tp= 575 µs.
2.0 2.4 2.8
MGD352
VC (V)
Fig.2 Load power as a function of control voltage;
typical values.
40
P
L
(dBm)
30
20
10
0
−10
ZS=ZL=50Ω; VS= 4.8 V; adjust VCfor PL=3W;
Tmb=25°C; δ = 1 : 8; tp= 575 µs.
915 MHz
880 MHz
−15 −10−25 −20 −50 5
MGD353
PD (dBm)
Fig.3 Load power as a function of drive power;
typical values.
handbook, halfpage
6
P
L
(W)
4
2
0
ZS=ZL=50Ω; VC= 3.5 V; PD= 3 mW;
=25°C; δ= 1: 8; tp= 575 µs.
T
mb
880 MHz
915 MHz
4567
MBK512
V
(V)
S
Fig.4 Load power as a function of supply voltage;
typical values.
50
handbook, halfpage
η
(%)
40
30
20
10
0
01
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW;
Tmb=25°C; δ= 1: 8; tp= 575 µs
915 MHz
880 MHz
234
P (W)
Fig.5 Efficiency as a function of load power;
typical values.
MGD355
L
1998 May 08 4
Philips Semiconductors Product specification
UHF amplifier module BGY206
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
880 890 900
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; VC= 3.5 V;
Tmb=25°C; δ= 1: 8; tp= 575 µs.
910
f (MHz)
Fig.6 Load power as a function of frequency;
typical values.
MGD356
920
910
MGD357
f (MHz)
handbook, halfpage
4
V
C
(V)
3
2
1
0
880 890 900
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; PL=3W;
Tmb=25°C; δ= 1: 8; tp= 575 µs.
Fig.7 Control voltage as a function of frequency;
typical values.
920
−30
H
2, H3
(dBc)
−40
−50
−60
880
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; PL=3W;
Tmb=25°C; δ= 1: 8; tp= 575 µs.
890 900 910
MGD358
H
3
H
2
f (MHz)
Fig.8 Harmonics as a function of frequency;
typical values.
920
Tmb (
MGD359
o
C)
handbook, halfpage
4
V
C
(V)
3
915 MHz
2
1
0
−40 0 40
ZS=ZL=50Ω; VS= 4.8 V; PD= 3 mW; PL=3W;
δ= 1 : 8; tp= 575 µs.
880 MHz
Fig.9 Control voltage as a function of mounting
base temperature; typical values.
80
1998 May 08 5
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