Philips BGY205 Datasheet

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DATA SH EET

BGY205

UHF amplifier module

Product specification
Supersedes data of May 1994

1996 May 21

Philips Semiconductors Product specification

UHF amplifier module BGY205

FEATURES

• 6 V nominal supply voltage

• 3.5 W pulsed output power

• Easy control of output power by DC voltage.

APPLICATIONS

• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.

DESCRIPTION

The BGY205 is a four-stage UHF amplifier module in a
SOT321B package. The module consists of four NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.

PINNING - SOT321B

PIN DESCRIPTION

1 RF input
2V
3V

C
S

4 RF output

Flange ground

12 34

Top view

Fig.1 Simplified outline.

MSA489

QUICK REFERENCE DATA

RF performance at T

MODE OF

OPERATION

=25°C.

mb

f

(MHz)

V

(V)

S

V

C

(V)

P

(W)

L

G

p

(dB)

η

(%)

Pulsed; δ = 1 : 8 880 to 915 6 ≤4 3.5 ≥32.5 ≥40 50

ZS; Z

(Ω)

L

1996 May 21 2

Philips Semiconductors Product specification

UHF amplifier module BGY205

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER MIN. MAX. UNIT

V

S

V

C

P

D

P

L

T

stg

T

mb

CHARACTERISTICS

Z

=50Ω;PD= 3 dBm; VS= 6 V; VC≤ 4 V; f = 880 to 915 MHz; Tmb=25°C; δ = 1 : 8; tp= 575 µs; unless

S=ZL

otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

Q

I

C

P

L

G

p

η efficiency adjust V
H

2

H

3

VSWR

in

P

n

DC supply voltage − 8.5 V
DC control voltage − 4.5 V
input drive power − 7mW
load power − 4W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C

leakage current VC= 0.5 V −−100 µA
control current adjust VCfor PL= 3.5 W −−500 µA
load power VC= 4 V 3.5 −−W
power gain adjust VCfor PL= 3.5 W 32.5 −−dB

for PL= 3.5 W 40 45 − %

C

second harmonic adjust VCfor PL= 3.5 W −−−40 dBc
third harmonic adjust VCfor PL= 3.5 W −−−40 dBc
input VSWR adjust VCfor PL= 3.5 W −−2:1
stability P

= 0 to 6 dBm; VS=5to8.5V;

D

−−−60 dBc
VC= 0 to 4 V; PL≤ 3.5 W;
VSWR ≤ 6 : 1 through all phases

isolation V

= 0.5 V −−−36 dBm

C

control bandwidth R1 = 0; C1 = 0; see Fig.16 1 −−MHz
AM-AM conversion P

with 3% AM; f = 100 kHz;

D

−−12 %
PL= 3.5 mW to 3.5 W

noise power PL= 3.5 W; bandwidth = 30 kHz;

−−−85 dBm
20 MHz above transmitter band

ruggedness V

= 8.5 V; adjust VCfor PL= 3.5 W;

S

no degradation

VSWR ≤ 10 : 1 through all phases

1996 May 21 3

Philips Semiconductors Product specification

UHF amplifier module BGY205

40

handbook, halfpage

P

L

(dBm)

30

880 MHz

20

10

0

2.5 2.7 3.5

ZS=ZL=50Ω; PD= 3dBm; VS=6V;
Tmb=25°C; δ = 1 : 8; tp= 575 µs.

915 MHz

2.9 3.1 3.3

MBG742

VC (V)

Fig.2 Load power as a function of control voltage;

typical values.

40

P

L

(dBm)

30

20

10

0

−10

−20

ZS=ZL=50Ω; VS= 6 V; PL= 3.5 mW;
Tmb=25°C; δ = 1 : 8; tp= 575 µs.

915 MHz

−15 −10−20 −50 5

880 MHz

MBG741

PD (dBm)

Fig.3 Load power as a function of drive power;

typical values.

12

handbook, halfpage

10

8

6

output amplitude modulation (%)

4

2

0

01020

ZS=ZL=50Ω; PD= 3 dBm; VS= 6 V; Tmb=25°C;
δ = 1 : 8; tp= 575 µs; input amplitude modulation = 3%.

880 MHz

915 MHz

30

Fig.4 Output amplitude modulation as a

function of load power; typical values.

MBG740

PL (dBm)

50

handbook, halfpage

η

(%)

40

30

20

40

10

01

ZS=ZL=50Ω; PD= 3 dBm; VS=6V;
Tmb=25°C; δ = 1 : 8; tp= 575 µs.

915 MHz

890 MHz

234

MBG739

P (W)

L

Fig.5 Efficiency as a function of load power;

typical values.

1996 May 21 4