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DISCRETE SEMICONDUCTORS
DATA SH EET
BGY204
UHF amplifier module
Product specification
File under Discrete Semiconductors, SC09
1996 May 21
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Philips Semiconductors Product specification
UHF amplifier module BGY204
FEATURES
• 4.8 V nominal supply voltage
• 3.2 W output power
• Easy control of output power by DC voltage.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY204 is a four-stage UHF amplifier module in a
SOT321B package. The module consists of four NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
PINNING - SOT321B
PIN DESCRIPTION
1 RF input
2V
3V
C
S
4 RF output
Flange ground
12 34
Top view
Fig.1 Simplified outline.
MSA489
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C.
mb
f
(MHz)
V
(V)
S
V
C
(V)
P
(W)
L
G
p
(dB)
η
(%)
Pulsed; δ = 1 : 8 880 to 915 4.8 ≤3.5 3.2 ≥35 typ. 45 50
ZS; Z
(Ω)
L
1996 May 21 2
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Philips Semiconductors Product specification
UHF amplifier module BGY204
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
CHARACTERISTICS
Z
=50Ω;PD= 1 mW; VS= 4.8 V; VC≤ 3.5 V; f = 880 to 915 MHz; Tmb=25°C; δ = 1 : 8; tp= 575 µs;
S=ZL
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
Q
I
C
P
L
G
p
η efficiency adjust V
H
2
H
3
VSWR
in
P
n
DC supply voltage PL=0 − 8V
DC control voltage − 4.5 V
input drive power − 2mW
load power VS≤ 6.5 V; ZL=50Ω−4W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C
leakage current VC= 0.5 V −−0.2 mA
control current adjust VCfor PL= 3.2 W −−0.5 mA
load power 3.2 −−W
power gain adjust VCfor PL= 3.2 W 35 −−dB
for PL= 3.2 W 40 45 − %
C
second harmonic adjust VCfor PL= 3.2 W −−−40 dBc
third harmonic adjust VCfor PL= 3.2 W −−−40 dBc
input VSWR adjust VCfor PL= 3.2 W −−2.5:1
stability P
= 0.5 to 2 mW; VS= 4 to 6.5 V;
D
−−−60 dBc
VC= 0 to 3.5 V; PL≤ 3.2 W;
VSWR ≤ 6 : 1 through all phases;
isolation V
= 0.5 V −−−36 dBm
C
control bandwidth 1 −−MHz
noise power PL= 3.2 W; bandwidth = 30 kHz;
−−−85 dBm
20 MHz above transmitter band
ruggedness V
= 6.5 V; adjust VCfor PL= 3.2 W;
S
no degradation
VSWR ≤ 10 : 1 through all phases
1996 May 21 3
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Philips Semiconductors Product specification
UHF amplifier module BGY204
40
handbook, halfpage
P
L
(dBm)
20
880 MHz
0
−20
−40
1.0 1.5 3.5
ZS=ZL=50Ω; PD= 0dBm; VS= 4.8 V; Tmb=25°C.
915 MHz
2.0 2.5 3.0
MGD363
VC (V)
Fig.2 Load power as a function of control voltage;
typical values.
40
P
L
(dBm)
20
915 MHz
0
−20
ZS=ZL=50Ω; VS= 4.8 V; adjust VCfor PL= 3.2 W; Tmb=25°C.
880 MHz
−25 −15−45 −35 −55
MGD364
PD (dBm)
Fig.3 Load power as a function of drive power;
typical values.
20
handbook, halfpage
16
12
880 MHz
8
output amplitude modulation (%)
4
0
51525
ZS=ZL=50Ω; VS= 4.8 V; Tmb=25°C;
input amplitude modulation = 3%.
915 MHz
MGD365
PL (dBm)
Fig.4 Output amplitude modulation as a function
of load power; typical values.
50
handbook, halfpage
η
%
40
30
20
10
35
0
01
ZS=ZL=50Ω; VS= 4.8 V; Tmb=25°C.
915 MHz
880 MHz
234
MGD366
P (W)
L
Fig.5 Efficiency as a function of load power;
typical values.
1996 May 21 4