Philips bgy204 DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
BGY204
UHF amplifier module
Product specification
File under Discrete Semiconductors, SC09
1996 May 21
Philips Semiconductors Product specification
UHF amplifier module BGY204
FEATURES
• 4.8 V nominal supply voltage
• 3.2 W output power
• Easy control of output power by DC voltage.
APPLICATIONS
• Digital cellular radio systems with Time Division Multiple
Access (TDMA) operation (GSM systems) in the
880 to 915 MHz frequency range.
DESCRIPTION
The BGY204 is a four-stage UHF amplifier module in a
SOT321B package. The module consists of four NPN
silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic substrate.
PINNING - SOT321B
PIN DESCRIPTION
1 RF input
2V
3V
C
S
4 RF output
Flange ground
12 34
Top view
Fig.1 Simplified outline.
MSA489
QUICK REFERENCE DATA
RF performance at T
MODE OF
OPERATION
=25°C.
mb
f
(MHz)
V
(V)
S
V
C
(V)
P
(W)
L
G
p
(dB)
η
(%)
Pulsed; δ = 1 : 8 880 to 915 4.8 ≤3.5 3.2 ≥35 typ. 45 50
ZS; Z
(Ω)
L
1996 May 21 2
Philips Semiconductors Product specification
UHF amplifier module BGY204
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
CHARACTERISTICS
Z
=50Ω;PD= 1 mW; VS= 4.8 V; VC≤ 3.5 V; f = 880 to 915 MHz; Tmb=25°C; δ = 1 : 8; tp= 575 µs;
S=ZL
unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
Q
I
C
P
L
G
p
η efficiency adjust V
H
2
H
3
VSWR
in
P
n
DC supply voltage PL=0 − 8V
DC control voltage − 4.5 V
input drive power − 2mW
load power VS≤ 6.5 V; ZL=50Ω−4W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C
leakage current VC= 0.5 V −−0.2 mA
control current adjust VCfor PL= 3.2 W −−0.5 mA
load power 3.2 −−W
power gain adjust VCfor PL= 3.2 W 35 −−dB
for PL= 3.2 W 40 45 − %
C
second harmonic adjust VCfor PL= 3.2 W −−−40 dBc
third harmonic adjust VCfor PL= 3.2 W −−−40 dBc
input VSWR adjust VCfor PL= 3.2 W −−2.5:1
stability P
= 0.5 to 2 mW; VS= 4 to 6.5 V;
D
−−−60 dBc
VC= 0 to 3.5 V; PL≤ 3.2 W;
VSWR ≤ 6 : 1 through all phases;
isolation V
= 0.5 V −−−36 dBm
C
control bandwidth 1 −−MHz
noise power PL= 3.2 W; bandwidth = 30 kHz;
−−−85 dBm
20 MHz above transmitter band
ruggedness V
= 6.5 V; adjust VCfor PL= 3.2 W;
S
no degradation
VSWR ≤ 10 : 1 through all phases
1996 May 21 3
Philips Semiconductors Product specification
UHF amplifier module BGY204
40
handbook, halfpage
P
L
(dBm)
20
880 MHz
0
−20
−40
1.0 1.5 3.5
ZS=ZL=50Ω; PD= 0dBm; VS= 4.8 V; Tmb=25°C.
915 MHz
2.0 2.5 3.0
MGD363
VC (V)
Fig.2 Load power as a function of control voltage;
typical values.
40
P
L
(dBm)
20
915 MHz
0
−20
ZS=ZL=50Ω; VS= 4.8 V; adjust VCfor PL= 3.2 W; Tmb=25°C.
880 MHz
−25 −15−45 −35 −55
MGD364
PD (dBm)
Fig.3 Load power as a function of drive power;
typical values.
20
handbook, halfpage
16
12
880 MHz
8
output amplitude modulation (%)
4
0
51525
ZS=ZL=50Ω; VS= 4.8 V; Tmb=25°C;
input amplitude modulation = 3%.
915 MHz
MGD365
PL (dBm)
Fig.4 Output amplitude modulation as a function
of load power; typical values.
50
handbook, halfpage
η
%
40
30
20
10
35
0
01
ZS=ZL=50Ω; VS= 4.8 V; Tmb=25°C.
915 MHz
880 MHz
234
MGD366
P (W)
L
Fig.5 Efficiency as a function of load power;
typical values.
1996 May 21 4
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