Philips BGY1916 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
andbook, halfpage
M3D167
BGY1916
UHF amplifier module
Product specification
Supersedes data of 1998 May 27
2000 Oct 17
Philips Semiconductors Product specification
UHF amplifier module BGY1916
FEATURES
• 26 V nominal supply voltage
• 16 W output power into a load of 50 Ωwithan RF drive
power of ≤63 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
1930 to 1990 MHz frequency band.
DESCRIPTION
The BGY1916 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
PINNING - SOT365A
PIN DESCRIPTION
1 RF input
2V
3V
4 RF output
Flange ground
handbook, halfpage
Fig.1 Simplified outline.
S1
S2
2134
MSA447
QUICK REFERENCE DATA
RF performance at Tmb=25°C.
MODE OF OPERATION
f
(MHz)
V
(V)
S1
V
(V)
S2
P
(W)
L
G
p
(dB)
η
(%)
ZS; Z
CW 1930 to 1990 5 26 ≥16 ≥24 ≥30 50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S1
V
S2
P
D
P
L
T
stg
T
mb
DC supply voltage 4.5 5.5 V
DC supply voltage − 28 V
input drive power − 120 mW
load power Tmb=25°C − 20 W
storage temperature −30 +100 °C
operating mounting base
−10 +90 °C
temperature
L
(Ω)
2000 Oct 17 2
Philips Semiconductors Product specification
UHF amplifier module BGY1916
CHARACTERISTICS
Tmb=25°C; VS1=5V; VS2= 26 V; PL= 16 W; ZS=ZL=50Ω unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency 1930 − 1990 MHz
I
S1
I
S2
P
L
G
p
η efficiency 30 −−%
H
2
H
3
VSWR
B AM bandwidth corner frequency=3dB;
supply current − 80 − mA
supply current PD< −60 dBm − 430 − mA
load power PD<63mW 16 −−W
power gain 24 − 28 dB
second harmonic −−−35 dBc
third harmonic −−−45 dBc
input VSWR −−1.6:1
in
stability VSWR ≤ 2 : 1 through all phases;
P
≤ 16 W; VS2=25to27V
L
reverse intermodulation P
carrier
= 16 W; P
reverse
= −40 dBc;
−−−60 dBc
−−−53 dBc
fi=fc±200 kHz
2 −−MHz
P
= 16 W; modulation = 20%
carrier
ruggedness VSWR ≤ 5 : 1 through all phases no degradation
30
handbook, halfpage
G
p
(dB)
20
10
0
0
f = 1960 MHz; VS1= 5 V; VS2= 26 V; ZS=ZL=50Ω; Tmb=25°C.
G
p
η
10 20
MGD187
PL (W)
Fig.2 Power gain and efficiency as functions of
load power; typical values.
60
η
(%)
40
20
0
30
30
handbook, halfpage
P
L
(W)
20
10
0
0
f = 1960 MHz; VS1= 5 V; VS2= 26 V; ZS=ZL=50Ω; Tmb=25°C.
40 80
MGD186
PIN (mW)
120
Fig.3 Loadpowerasafunctionofinputpower;
typical values.
2000 Oct 17 3
Philips Semiconductors Product specification
UHF amplifier module BGY1916
APPLICATION INFORMATION
handbook, full pagewidth
C8
C6
R2 L2
C4
C2
V
S2
50 Ω
output
MGM861
Z
2
50 Ω
input
C7
C5
Z
1
R1 L1
C3
C1
V
S1
Fig.4 Test circuit.
List of components (see Figs 4 and 5)
COMPONENT DESCRIPTION VALUE CATALOGUE NO.
C1, C2 electrolytic capacitor 10 µF; 35 V
C3, C4 multilayer ceramic chip capacitor 10 nF; 50 V
C5, C6 multilayer ceramic chip capacitor 100 pF; 50 V
C7, C8 multilayer ceramic chip capacitor 10 pF; 50 V
L1, L2 Grade 4S2 Ferroxcube bead 4330 030 36300
R1, R2 metal film resistor 10 Ω; 0.4 W 2322 195 13109
, Z
Z
1
2
stripline: note 1 50 Ω
Note
1. The striplines are on a double copper-clad printed-circuit board (RO5880) with εr= 2.2 and thickness = 0.79 mm.
2000 Oct 17 4
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