Philips BGY1816S Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
andbook, halfpage
M3D388
BGY1816S
UHF amplifier module
Product specification
Supersedes data of 1999 Jan 07
1999 Apr 13
Philips Semiconductors Product specification
UHF amplifier module BGY1816S
FEATURES
• 26 V nominal supply voltage
• 16 W output power into a load of 50 Ω with an RF drive
power of ≤20 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
1805 to 1880 MHz frequency band.
DESCRIPTION
The BGY1816S is a three-stage UHF amplifier module in
a SOT501A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
PINNING - SOT501A
PIN DESCRIPTION
1 RF input
2V
3V
4 RF output
Flange ground
1
Front view
Fig.1 Simplified outline.
S1
S2
234
MBK760
QUICK REFERENCE DATA
RF performance at T
MODE OF OPERATION
=25°C.
mb
f
(MHz)
V
(V)
S1
V
(V)
S2
P
(W)
L
G
p
(dB)
η
(%)
ZS; Z
CW 1805 to 1880 5 26 ≥16 ≥29 ≥30 50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S1
V
S2
P
D
P
L
T
stg
T
mb
DC supply voltage 4.5 5.5 V
DC supply voltage − 28 V
input drive power − 120 mW
load power Tmb=25°C − 20 W
storage temperature −30 +100 °C
operating mounting base temperature −10 +90 °C
L
(Ω)
1999 Apr 13 2
Philips Semiconductors Product specification
UHF amplifier module BGY1816S
CHARACTERISTICS
T
=25°C; VS1=5V; VS2= 26 V; PL= 16 W; ZS=ZL=50Ω unless otherwise specified.
mb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency 1805 − 1880 MHz
I
S1
I
S2
P
L
G
p
η efficiency 30 −−%
H
2
H
3
VSWR
B AM bandwidth corner frequency=3dB;
supply current − 80 − mA
supply current PD< −60 dBm − 430 − mA
load power PD<20mW 16 −−W
power gain 29 −−dB
second harmonic −−−35 dBc
third harmonic −−−40 dBc
input VSWR −−2:1
in
stability VSWR ≤ 2 : 1 through all phases;
≤ 16 W; VS2=25to27V
P
L
reverse intermodulation P
carrier
=16W; P
reverse
= −40 dBc;
−−−60 dBc
−−−53 dBc
fi=fc±200 kHz
2 −−MHz
P
= 16 W; modulation = 20%
carrier
ruggedness VSWR ≤ 5 : 1 through all phases no degradation
1999 Apr 13 3
Philips Semiconductors Product specification
UHF amplifier module BGY1816S
handbook, full pagewidth
C8
C6
R2 L2
C4
C2
V
S2
50 Ω
output
MGM861
Z
2
50 Ω
input
C7
C5
Z
1
R1 L1
C3
C1
V
S1
Fig.2 Test circuit.
List of components (see Figs 2 and 3)
COMPONENT DESCRIPTION VALUE CATALOGUE NO.
C1, C2 electrolytic capacitor 10 µF; 35 V
C3, C4 multilayer ceramic chip capacitor 10 nF; 50 V
C5, C6 multilayer ceramic chip capacitor 100 pF; 50 V
C7, C8 multilayer ceramic chip capacitor 10 pF; 50 V
L1, L2 Grade 4S2 Ferroxcube bead 4330 030 36300
R1, R2 metal film resistor 10 Ω; 0.4 W 2322 195 13109
, Z
Z
1
2
stripline; note 1 50 Ω−
Note
1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (ε
1999 Apr 13 4
= 4.5); thickness = 1 mm.
r
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