Philips BGY1816N, BGY1816 Datasheet
DATA SH EET
Product specification
Supersedes data of 1998 Apr 09
1998 May 27
DISCRETE SEMICONDUCTORS
BGY1816
UHF amplifier module
andbook, halfpage
M3D167
1998 May 27 2
Philips Semiconductors Product specification
UHF amplifier module BGY1816
FEATURES
• 26 V nominal supply voltage
• 16 W output power into a load of 50 Ω with an RF drive
power of ≤63 mW.
APPLICATIONS
• Base station transmitting equipment operating in the
1805 to 1880 MHz frequency band.
DESCRIPTION
The BGY1816 is a three-stage UHF amplifier module in a
SOT365A package with a plastic cap. It consists of three
NPN silicon planar transistor dies mounted together with
matching and bias circuit components on a metallized
ceramic AlN substrate.
PINNING - SOT365A
PIN DESCRIPTION
1 RF input
2V
S1
3V
S2
4 RF output
Flange ground
Fig.1 Simplified outline.
handbook, halfpage
MSA447
2134
QUICK REFERENCE DATA
RF performance at T
mb
=25°C.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
MODE OF OPERATION
f
(MHz)
V
S1
(V)
V
S2
(V)
P
L
(W)
G
p
(dB)
η
(%)
ZS; Z
L
(Ω)
CW 1805 to 1880 5 26 ≥16 ≥24 ≥30 50
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S1
DC supply voltage 4.5 5.5 V
V
S2
DC supply voltage − 28 V
P
D
input drive power − 120 mW
P
L
load power Tmb=25°C − 20 W
T
stg
storage temperature −30 +100 °C
T
mb
operating mounting base temperature −10 +90 °C
1998 May 27 3
Philips Semiconductors Product specification
UHF amplifier module BGY1816
CHARACTERISTICS
T
mb
=25°C; VS1=5V; VS2= 26 V; PL= 16 W; ZS=ZL=50Ω unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency 1805 − 1880 MHz
I
S1
supply current − 80 − mA
I
S2
supply current PD< −60 dBm − 430 − mA
P
L
load power PD<63mW 16 −−W
G
p
power gain 24 − 28 dB
η efficiency 30 −−%
H
2
second harmonic −−−35 dBc
H
3
third harmonic −−−40 dBc
VSWR
in
input VSWR −−1.6:1
stability VSWR ≤ 2 : 1 through all phases;
P
L
≤ 16 W; VS2=25to27V
−−−60 dBc
reverse intermodulation P
carrier
=16W; P
reverse
= −40 dBc;
fi=fc±200 kHz
−−−53 dBc
B AM bandwidth corner frequency=3dB;
P
carrier
= 16 W; modulation = 20%
2 −−MHz
ruggedness VSWR ≤ 5 : 1 through all phases no degradation
Fig.2 Power gain and efficiency as functions of
load power; typical values.
f =1850 MHz; VS1= 5 V; VS2= 26 V; ZS=ZL=50Ω; Tmb=25°C.
handbook, halfpage
0
30
G
p
(dB)
G
p
η
(%)
η
20
10
0
60
40
20
0
10 20
PL (W)
30
MGD187
Fig.3 Load power as a function of input power;
typical values.
f = 1850 MHz; VS1= 5 V; VS2= 26 V; ZS=ZL=50Ω; Tmb=25°C.
handbook, halfpage
0
30
P
L
(W)
20
10
0
40 80
PIN (mW)
120
MGD186
1998 May 27 4
Philips Semiconductors Product specification
UHF amplifier module BGY1816
APPLICATION INFORMATION
List of components (see Figs 4 and 5)
Note
1. The striplines are on a double copper-clad printed-circuit board with epoxy dielectric (ε
r
= 4.5); thickness = 1 mm.
COMPONENT DESCRIPTION VALUE CATALOGUE NO.
C1, C2 electrolytic capacitor 10 µF; 35 V
C3, C4 multilayer ceramic chip capacitor 10 nF; 50 V
C5, C6 multilayer ceramic chip capacitor 100 pF; 50 V
C7, C8 multilayer ceramic chip capacitor 10 pF; 50 V
L1, L2 Grade 4S2 Ferroxcube bead 4330 030 36300
R1, R2 metal film resistor 10 Ω; 0.4 W 2322 195 13109
Z
1
, Z
2
stripline: note 1 50 Ω
handbook, full pagewidth
MGM861
C8
C6
R2 L2
Z
2
C4
C2
V
S2
output
C7
C5
R1 L1
C3
C1
V
S1
Z
1
input
Fig.4 Test circuit.
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