Philips bgy148ab DATASHEETS
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D188
BGY148A; BGY148B
HF amplifier modules
Product specification
Supersedes data of 1997 Jul 14
1998 May 13
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
FEATURES
• Single 6 V nominal supply voltage
• 3 W output power
• Easy control of output power by DC voltage
• Silicon bipolar technology
• Standby current less than 100 µA.
APPLICATIONS
• Portable communication equipment operating in the
400 to 440 MHz and 430 to 488 MHz frequency ranges
respectively.
DESCRIPTION
The BGY148A and BGY148B are three-stage UHF
amplifier modules in a SOT421A package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate. The
modules produce an output power of 3 W into a load of
50 Ω with an RF drive power of 10 mW.
PINNING - SOT421A
PIN DESCRIPTION
1 RF input
2V
3V
C
S
4 RF output
Flange ground
handbook, halfpage
12 34
Top view
Fig.1 Simplified outline (SOT421A).
MSA483
QUICK REFERENCE DATA
RF performance at T
TYPE
=25°C.
mb
MODE OF
OPERATION
f
(MHz)
V
(V)
S
P
L
(W)
G
(dB)
p
η
(%)
ZS; Z
(Ω)
L
BGY148A CW 400 to 440 6 ≥3 ≥24.8 typ. 53 50
BGY148B CW 430 to 488 6 ≥3 ≥24.8 typ. 53 50
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage − 8.5 V
DC control voltage − 4V
input drive power − 20 mW
load power − 3.5 W
storage temperature −40 +100 °C
operating mounting-base temperature; note1 −30 +100 °C
Note
1. In order to control the mounting-base temperature, proper heatsinking of the underside of the device is required.
It is therefore advisable that the device is mounted on a printed-circuit board with metallized through holes.
1998 May 13 2
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
CHARACTERISTICS
Z
f frequency range
I
I
P
G
η efficiency adjust V
H
H
VSWR
=50Ω;PD= 10 mW; VS= 6 V; VC≤ 3.5 V; Tmb=25°C; unless otherwise specified.
S=ZL
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
BGY148A 400 − 440 MHz
BGY148B 430 − 488 MHz
Q
C
L
p
2
3
in
total quiescent current VC= 0; PD=0 −−100 µA
control current adjust VCfor PL=3W −−500 µA
load power 3 −−W
power gain adjust VCfor PL= 3 W 24.8 −−dB
for PL=3W 46 53 − %
C
second harmonic adjust VCfor PL=3W −−−38 dBc
third harmonic adjust VCfor PL=3W −−−38 dBc
input VSWR adjust VCfor PL=3W −−3:1
control range V
stability P
= 0 to 3.5 V 10 −−dB
C
= 5 to 20 mW; VS= 5 to 8.5 V;
D
−−−60 dBc
PL≤ 3.5 W;
VSWR ≤ 4 : 1 through all phases
ruggedness V
= 8.5 V; adjust VCfor PL= 3.5 W;
S
no degradation
VSWR ≤ 4 : 1 through all phases
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
0 100
VS= 8.5V.
Fig.2 Load power derating curves.
VSWR = 1:1
VSWR = 3:1
20 40 60 80
T
MDA207
mb
o
(
C)
1998 May 13 3
Philips Semiconductors Product specification
HF amplifier modules BGY148A; BGY148B
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
01
ZS=ZL=50Ω; PD= 10 mW; VS= 6 V; Tmb=25°C.
400 MHz
440 MHz
2
MGD553
VC (V)
Fig.3 Load power as a function of control voltage;
BGY148A; typical values.
60
handbook, halfpage
η
(%)
40
20
43
0
0
ZS=ZL=50Ω; PD= 10 mW; VS= 6 V; Tmb=25°C.
440 MHz
400 MHz
12
MGD554
43
P
(W)
L
Fig.4 Efficiency as a function of load power;
BGY148A; typical values.
handbook, halfpage
5
P
L
(W)
4
3
2
1
0
380 400
ZS=ZL=50Ω; PD= 10 mW; VS= 6 V; VC= 3.5 V; Tmb=25°C.
420
MGD555
f (MHz)
460440
Fig.5 Load power as a function of frequency;
BGY148A; typical values.
1998 May 13 4
60
handbook, halfpage
η
(%)
40
20
0
380
ZS=ZL=50Ω; PD= 10 mW; VS= 6 V; PL= 3 W; Tmb=25°C.
400 420
f (MHz)
Fig.6 Efficiency as a function of frequency;
BGY148A; typical values.
MGD556
460440
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