![](/html/13/1341/13412df7d3fd19d0403dd048571d4137ddf0ebdf96b8b29daa7da888a3be99d2/bg1.png)
DISCRETE SEMICONDUCTORS
DATA SH EET
M3D369
BGY122A; BGY122B
UHF amplifier modules
Product specification
Supersedes data of 1997 Dec 01
1998 May 11
![](/html/13/1341/13412df7d3fd19d0403dd048571d4137ddf0ebdf96b8b29daa7da888a3be99d2/bg2.png)
Philips Semiconductors Product specification
UHF amplifier modules BGY122A; BGY122B
FEATURES
• Single 4.8 V nominal supply voltage
• 1.2 W output power
• Easy control of output power by DC voltage
• Very high efficiency (typ. 55%)
• Silicon bipolar technology
• Standby current less than 100 µA.
APPLICATIONS
• Hand-held transmitting equipment operating in the
824 to 849 MHz and 872 to 905 MHz frequency ranges.
DESCRIPTION
The BGY122A and BGY122B are three-stage UHF
amplifier modules in a SOT388B package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate.
The modules produce an output power of 1.2 W into a load
of 50 Ω with an RF drive power of 2 mW.
PINNING - SOT388B
PIN DESCRIPTION
1 RF input
2V
3V
C
S
4 RF output
Flange ground
handbook, halfpage
1234
Top view
Fig.1 Simplified outline.
MBK197
QUICK REFERENCE DATA
RF performance at T
TYPE
=25°C.
mb
MODE OF
OPERATION
f
(MHz)
V
(V)
S
P
L
(W)
G
(dB)
p
η
(%)
BGY122A CW 824 to 849 4.8 1.2 ≥27.8 typ.55 50
BGY122B CW 872 to 905 4.8 1.2 ≥27.8 typ.55 50
ZS; Z
(Ω)
L
1998 May 11 2
![](/html/13/1341/13412df7d3fd19d0403dd048571d4137ddf0ebdf96b8b29daa7da888a3be99d2/bg3.png)
Philips Semiconductors Product specification
UHF amplifier modules BGY122A; BGY122B
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
S
V
C
P
D
P
L
T
stg
T
mb
DC supply voltage VC= 0; PD=0 − 10 V
DC control voltage − 3.5 V
input drive power − 5mW
load power − 1.6 W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C
2.0
handbook, halfpage
P
L
(W)
1.6
1.2
0.8
0.4
0
040
VS= 6.5V.
MDA147
VSWR = 1:1
VSWR = 3:1
80 120
T (
mb
o
Fig.2 Load power derating curve.
C)
1998 May 11 3
![](/html/13/1341/13412df7d3fd19d0403dd048571d4137ddf0ebdf96b8b29daa7da888a3be99d2/bg4.png)
Philips Semiconductors Product specification
UHF amplifier modules BGY122A; BGY122B
CHARACTERISTICS
Z
=50Ω; PD= 2 mW; VS= 4.8 V; VC≤ 3 V; Tmb=25°C; unless otherwise specified.
S=ZL
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
f frequency
BGY122A 824 − 849 MHz
BGY122B 872 − 905 MHz
I
Q
I
C
P
L
G
p
η efficiency adjust V
H
2
H
3
VSWR
in
total quiescent current VC= 0; PD< −60 dBm −−100 µA
control current adjust VCfor PL= 1.2 W −−500 µA
load power VC= 3 V 1.2 −−W
power gain adjust VCfor PL= 1.2 W 27.8 −−dB
for PL= 1.2 W 50 55 − %
C
second harmonic adjust VCfor PL= 1.2 W −−−36 dBc
third harmonic adjust VCfor PL= 1.2 W −−−36 dBc
input VSWR adjust VCfor PL= 1.2 W −−3:1
stability P
= 0 to +6 dBm; VS=4to6.5V;
D
−−−60 dBc
VC= 0 to 3 V; PL≤ 1.2 W;
VSWR ≤ 6 : 1 through all phases
isolation V
P
n
noise power adjust VC for PL= 1.2 W;
=0 −−40 − dBm
C
−−−90 dBm
bandwidth = 30 kHz; fn=fo+ 45 MHz
ruggedness V
= 6.5 V; adjust VCfor PL= 1.4 W;
S
no degradation
VSWR ≤ 10 : 1 through all phases
1998 May 11 4
![](/html/13/1341/13412df7d3fd19d0403dd048571d4137ddf0ebdf96b8b29daa7da888a3be99d2/bg5.png)
Philips Semiconductors Product specification
UHF amplifier modules BGY122A; BGY122B
824 MHz
849 MHz
3
MDA148
VC (V)
2.0
handbook, halfpage
P
L
(W)
1.6
1.2
0.8
0.4
0
012 4
ZS=ZL=50Ω; PD= 2 mW; VS= 4.8 V; Tmb=25°C.
Fig.3 Load power as a function of control voltage;
BGY122A; typical values.
80
handbook, halfpage
η
(%)
60
849 MHz
824 MHz
40
20
0
0 0.4
ZS=ZL=50Ω; PD= 2 mW; VS= 4.8 V; Tmb=25°C.
0.8 1.2 1.6 2.0
Fig.4 Efficiency as a function of load power;
BGY122A; typical values.
MDA149
PL (W)
2.0
handbook, halfpage
P
L
(W)
1.6
1.2
0.8
0.4
0
820 830
ZS=ZL=50Ω; PD= 2 mW; VC= 3 V; Tmb=25°C.
840
VS = 4.8 V
4 V
f (MHz)
Fig.5 Load power as a function of frequency;
BGY122A; typical values.
MDA150
2.0
handbook, halfpage
P
L
(W)
1.6
1.2
0.8
0.4
0
860850
−40 120
ZS=ZL=50Ω; PD= 2 mW; VS= 4.8 V; VC=3V.
849 MHz
824 MHz
04080
MDA151
o
C)
T
(
mb
Fig.6 Load power as a function of mounting base
temperature; BGY122A; typical values.
1998 May 11 5