Philips bgy122ab DATASHEETS

DISCRETE SEMICONDUCTORS

DATA SH EET

M3D369

BGY122A; BGY122B

UHF amplifier modules

Product specification
Supersedes data of 1997 Dec 01

1998 May 11

Philips Semiconductors Product specification

UHF amplifier modules BGY122A; BGY122B

FEATURES

• Single 4.8 V nominal supply voltage

• 1.2 W output power

• Easy control of output power by DC voltage

• Very high efficiency (typ. 55%)

• Silicon bipolar technology

• Standby current less than 100 µA.

APPLICATIONS

• Hand-held transmitting equipment operating in the
824 to 849 MHz and 872 to 905 MHz frequency ranges.

DESCRIPTION

The BGY122A and BGY122B are three-stage UHF
amplifier modules in a SOT388B package. Each module
consists of three NPN silicon planar transistor dies
mounted together with matching and bias circuit
components on a metallized ceramic substrate.
The modules produce an output power of 1.2 W into a load
of 50 Ω with an RF drive power of 2 mW.

PINNING - SOT388B

PIN DESCRIPTION

1 RF input
2V
3V

C
S

4 RF output

Flange ground

handbook, halfpage

1234

Top view

Fig.1 Simplified outline.

MBK197

QUICK REFERENCE DATA

RF performance at T

TYPE

=25°C.

mb

MODE OF

OPERATION

f

(MHz)

V

(V)

S

P

L

(W)

G

(dB)

p

η

(%)

BGY122A CW 824 to 849 4.8 1.2 ≥27.8 typ.55 50
BGY122B CW 872 to 905 4.8 1.2 ≥27.8 typ.55 50

ZS; Z

(Ω)

L

1998 May 11 2

Philips Semiconductors Product specification

UHF amplifier modules BGY122A; BGY122B

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

V

C

P

D

P

L

T

stg

T

mb

DC supply voltage VC= 0; PD=0 − 10 V
DC control voltage − 3.5 V
input drive power − 5mW
load power − 1.6 W
storage temperature −40 +100 °C
operating mounting base temperature −30 +100 °C

2.0

handbook, halfpage

P

L

(W)

1.6

1.2

0.8

0.4

0

040

VS= 6.5V.

MDA147

VSWR = 1:1

VSWR = 3:1

80 120

T (

mb

o

Fig.2 Load power derating curve.

C)

1998 May 11 3

Philips Semiconductors Product specification

UHF amplifier modules BGY122A; BGY122B

CHARACTERISTICS

Z

=50Ω; PD= 2 mW; VS= 4.8 V; VC≤ 3 V; Tmb=25°C; unless otherwise specified.

S=ZL

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

f frequency

BGY122A 824 − 849 MHz
BGY122B 872 − 905 MHz

I

Q

I

C

P

L

G

p

η efficiency adjust V
H

2

H

3

VSWR

in

total quiescent current VC= 0; PD< −60 dBm −−100 µA
control current adjust VCfor PL= 1.2 W −−500 µA
load power VC= 3 V 1.2 −−W
power gain adjust VCfor PL= 1.2 W 27.8 −−dB

for PL= 1.2 W 50 55 − %

C

second harmonic adjust VCfor PL= 1.2 W −−−36 dBc
third harmonic adjust VCfor PL= 1.2 W −−−36 dBc
input VSWR adjust VCfor PL= 1.2 W −−3:1
stability P

= 0 to +6 dBm; VS=4to6.5V;

D

−−−60 dBc
VC= 0 to 3 V; PL≤ 1.2 W;
VSWR ≤ 6 : 1 through all phases

isolation V

P

n

noise power adjust VC for PL= 1.2 W;

=0 −−40 − dBm

C

−−−90 dBm
bandwidth = 30 kHz; fn=fo+ 45 MHz

ruggedness V

= 6.5 V; adjust VCfor PL= 1.4 W;

S

no degradation

VSWR ≤ 10 : 1 through all phases

1998 May 11 4

Philips Semiconductors Product specification

UHF amplifier modules BGY122A; BGY122B

824 MHz
849 MHz

3

MDA148

VC (V)

2.0

handbook, halfpage

P

L

(W)

1.6

1.2

0.8

0.4

0

012 4

ZS=ZL=50Ω; PD= 2 mW; VS= 4.8 V; Tmb=25°C.

Fig.3 Load power as a function of control voltage;

BGY122A; typical values.

80

handbook, halfpage

η

(%)

60

849 MHz

824 MHz

40

20

0

0 0.4

ZS=ZL=50Ω; PD= 2 mW; VS= 4.8 V; Tmb=25°C.

0.8 1.2 1.6 2.0

Fig.4 Efficiency as a function of load power;

BGY122A; typical values.

MDA149

PL (W)

2.0

handbook, halfpage

P

L

(W)

1.6

1.2

0.8

0.4

0

820 830

ZS=ZL=50Ω; PD= 2 mW; VC= 3 V; Tmb=25°C.

840

VS = 4.8 V

4 V

f (MHz)

Fig.5 Load power as a function of frequency;

BGY122A; typical values.

MDA150

2.0

handbook, halfpage

P

L

(W)

1.6

1.2

0.8

0.4

0

860850

−40 120

ZS=ZL=50Ω; PD= 2 mW; VS= 4.8 V; VC=3V.

849 MHz

824 MHz

04080

MDA151

o

C)

T

(

mb

Fig.6 Load power as a function of mounting base

temperature; BGY122A; typical values.

1998 May 11 5