Philips BGX885N User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D248
BGX885N
860 MHz, 17 dB gain push-pull
amplifier
Product specification
Supersedes data of 1997 Mar 26
2001 Nov 14
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
DESCRIPTION
The BGX885N is a hybrid amplifier module designed for
CATV/MATVsystemsoperatingoverafrequencyrangeof
40 to 860 MHz at a voltage supply of 24 V (DC).
PINNING - SOT115D
PIN DESCRIPTION
1 input; note 1
2, 3 common
4 60 mA supply terminal
5, 6, 7 common
8+V
B
9 output; note 1
Note
1. Pins 1 and 9 carry DC voltages.
handbook, halfpage
Side view
246
351
789
Fig.1 Simplified outline.
MBK049
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 16.5 17.5 dB
f = 750 MHz 17.3 − dB
I
tot
total current consumption (DC) VB=24V − 240 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
DC supply voltage − 26 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 14 2
Philips Semiconductors Product specification
860 MHz, 17 dB gain push-pull amplifier BGX885N
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb=30°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.4 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.3 dB
s
11
s
22
d
2
V
o
NF noise figure f = 50 MHz − 7.5 dB
I
tot
power gain f = 50 MHz 16.5 17.5 dB
f = 750 MHz 17.3 − dB
input return losses f = 40 MHz; note 1 20 − dB
f = 800 to 860 MHz 10 − dB
output return losses f = 40 MHz; note 1 20 − dB
f = 640 to 860 MHz 15 − dB
second order distortion note 2 −−53 dB
output voltage dim= −60 dB; note 3 61 − dBmV
d
= −60 dB; note 4 60 − dBmV
im
f = 350 MHz − 7.5 dB
f = 550 MHz − 7.5 dB
f = 650 MHz − 7.5 dB
f = 750 MHz − 8dB
f = 860 MHz − 8dB
total current consumption (DC) note 5 − 240 mA
Notes
1. Decrease per octave of 1.5 dB.
2. f
= 349.25 MHz; Vp=Vo= 59 dBmV;
p
fq= 403.25 MHz; Vq=Vo;
measured at fp+fq= 752.5 MHz.
3. Measured according to DIN45004B:
fp= 341.25 MHz; Vp=Vo;
fq= 348.25 MHz; Vq=Vo−6 dB;
fr= 350.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 339.25 MHz.
4. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 14 3
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