Philips BGR269 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGR269
Hybrid CATV amplifier module
Objective specification 2000 May 01
Philips Semiconductors Objective specification
Hybrid CATV amplifier module BGR269
FEATURES
• Extremely low noise
• Excellent linearity
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Reverse amplifier in two-way CATV systems operating
in the 5 to 200 MHz frequency range.
DESCRIPTION
High performance amplifier operating at a voltage supply
of 24 V DC in a SOT115J package.
PINNING SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
789
351
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
I
tot
power gain f = 5 MHz 34.5 35 35.5 dB
total current consumption (DC) VB=24V −−330 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
mb
T
stg
RF input voltage − 65 dBmV
operating mounting base temperature −20 +100 °C
storage temperature range −40 +100 °C
2000 May 01 2
Philips Semiconductors Objective specification
Hybrid CATV amplifier module BGR269
CHARACTERISTICS
Bandwidth 5 to 200 MHz; VB= 24 V; Tmb=30°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 5 to 200 MHz 0 − 0.5 dB
FL flatness of frequency response f = 5 to 200 MHz −−±0.2 dB
s
11
s
22
CTB composite triple beat 6 chs flat; V
X
mod
CSO composite second order
d
2
d
3
F noise figure f = 65 MHz −−4dB
I
tot
power gain f = 5 MHz 34.5 35 35.5 dB
input return losses f = 5 to 200 MHz 20 −−dB
output return losses f = 5 to 200 MHz 20 −−dB
= 50 dBmV;
o
−−−73 dB
measured at 37.25 MHz
10 chs flat; V
= 50 dBmV;
o
−−−62 dB
measured at 61.25 MHz
28 chs flat; V
= 50 dBmV;
o
−−−58 dB
measured at 199.25 MHz
cross modulation 6 chs flat; Vo= 50 dBmV;
−−−66 dB
measured at 37.25 MHz
10 chs flat; V
= 50 dBmV;
o
−−−57 dB
measured at 61.25 MHz
28 chs flat; V
= 50 dBmV;
o
−−−51 dB
measured at 61.25 MHz
distortion
6 chs flat; V
measured at 24 or 38.5 MHz
10 chs flat; V
= 50 dBmV;
o
= 50 dBmV;
o
−−−68 dB
−−−65 dB
measured at 24 or 62.5 MHz
28 chs flat; V
= 50 dBmV;
o
−−−56 dB
measured at 24 or 200.5 MHz
second order distortion note 1 −−−70 dB
third order distortion note 2 −−−80 dB
f = 200 MHz −−4.5 dB
total current consumption note 3 −−330 mA
Notes
1. f
= 25.25 MHz; Vp= 50 dBmV;
p
fq= 37.25 MHz; Vq= 50 dBmV;
measured at fp+fq= 62.5 MHz.
2. fp= 7.25 MHz; Vp= 50 dBmV;
fq= 19.25 MHz; Vq= 50 dBmV;
fr= 37.25 MHz; Vr= 50 dBmV;
measured at fp+fq+fr= 63.75 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2000 May 01 3
Loading...