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DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGR269
Hybrid CATV amplifier module
Objective specification 2000 May 01
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Philips Semiconductors Objective specification
Hybrid CATV amplifier module BGR269
FEATURES
• Extremely low noise
• Excellent linearity
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• Reverse amplifier in two-way CATV systems operating
in the 5 to 200 MHz frequency range.
DESCRIPTION
High performance amplifier operating at a voltage supply
of 24 V DC in a SOT115J package.
PINNING SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
789
351
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
I
tot
power gain f = 5 MHz 34.5 35 35.5 dB
total current consumption (DC) VB=24V −−330 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
mb
T
stg
RF input voltage − 65 dBmV
operating mounting base temperature −20 +100 °C
storage temperature range −40 +100 °C
2000 May 01 2
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Philips Semiconductors Objective specification
Hybrid CATV amplifier module BGR269
CHARACTERISTICS
Bandwidth 5 to 200 MHz; VB= 24 V; Tmb=30°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 5 to 200 MHz 0 − 0.5 dB
FL flatness of frequency response f = 5 to 200 MHz −−±0.2 dB
s
11
s
22
CTB composite triple beat 6 chs flat; V
X
mod
CSO composite second order
d
2
d
3
F noise figure f = 65 MHz −−4dB
I
tot
power gain f = 5 MHz 34.5 35 35.5 dB
input return losses f = 5 to 200 MHz 20 −−dB
output return losses f = 5 to 200 MHz 20 −−dB
= 50 dBmV;
o
−−−73 dB
measured at 37.25 MHz
10 chs flat; V
= 50 dBmV;
o
−−−62 dB
measured at 61.25 MHz
28 chs flat; V
= 50 dBmV;
o
−−−58 dB
measured at 199.25 MHz
cross modulation 6 chs flat; Vo= 50 dBmV;
−−−66 dB
measured at 37.25 MHz
10 chs flat; V
= 50 dBmV;
o
−−−57 dB
measured at 61.25 MHz
28 chs flat; V
= 50 dBmV;
o
−−−51 dB
measured at 61.25 MHz
distortion
6 chs flat; V
measured at 24 or 38.5 MHz
10 chs flat; V
= 50 dBmV;
o
= 50 dBmV;
o
−−−68 dB
−−−65 dB
measured at 24 or 62.5 MHz
28 chs flat; V
= 50 dBmV;
o
−−−56 dB
measured at 24 or 200.5 MHz
second order distortion note 1 −−−70 dB
third order distortion note 2 −−−80 dB
f = 200 MHz −−4.5 dB
total current consumption note 3 −−330 mA
Notes
1. f
= 25.25 MHz; Vp= 50 dBmV;
p
fq= 37.25 MHz; Vq= 50 dBmV;
measured at fp+fq= 62.5 MHz.
2. fp= 7.25 MHz; Vp= 50 dBmV;
fq= 19.25 MHz; Vq= 50 dBmV;
fr= 37.25 MHz; Vr= 50 dBmV;
measured at fp+fq+fr= 63.75 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2000 May 01 3