Philips BGM1012 User Manual

DISCRETE SEMICONDUCTORS

DATA SH EET

ook, halfpage

MBD128

BGM1012

MMIC wideband amplifier

Product specification
Supersedes data of 2002 May 16

2002 Sep 06

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

FEATURES

• Internally matched to 50 Ω

• Very wide frequency range (4 Ghz at 3 dB bandwidth)

• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)

• 10 dBm saturated output power at 1 GHz

• High linearity (18 dBm IP3

at 1 GHz)

(out)

• Low current (14.6 mA)

• Unconditionally stable.

APPLICATIONS

• LNB IF amplifiers

• Cable systems

• ISM

• General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifierwith internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3 RF out
4 GND1
6RFin

4

56

63

132

Top view

Marking code: C2-.

MAM455

Fig.1 Simplified outline (SOT363) and symbol.

1

2, 54

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
s

S

S

2



21

DC supply voltage 3 4 V
DC supply current 14.6 − mA

insertion power gain f = 1 GHz 20.1 − dB
NF noise figure f = 1 GHz 4.8 − dB
P

L(sat)

saturated load power f = 1 GHz 9.7 − dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Sep 06 2

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

DC supply voltage RF input AC coupled − 4V

supply current − 50 mA

total power dissipation Ts≤ 90 °C − 200 mW

storage temperature −65 +150 °C

operating junction temperature − 150 °C

maximum drive power − 10 dBm

thermal resistance from junction to

P

= 200 mW; Ts≤ 90 °C 300 K/W

tot

solder point

2002 Sep 06 3

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

CHARACTERISTICS

VS=3V; IS= 14.6 mA; Tj=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2

s



21

R

LIN

R

L OUT

2

s12

NF noise figure f = 1 GHz − 4.8 5.1 dB

BW bandwidth at s
K stability factor f = 1 GHz 1.5 2.1 −−

P

L(sat)

P

L1dB

IP3

(in)

IP3

(out)

supply current 11 14.6 19 mA

insertion power gain f = 100 MHz 19 19.5 20 dB

f = 1 GHz 19 20.1 21 dB
f = 1.8 GHz 19 20.4 21 dB
f = 2.2 GHz 19 20.4 22 dB
f = 2.6 GHz 18 19.9 21 dB
f = 3 GHz 16 18.7 20 dB

return losses input f = 1 GHz 9 11 − dB

f = 2.2 GHz 13 15 − dB

return losses output f = 1 GHz 11 14 − dB

f = 2.2 GHz 10 13 − dB

isolation f = 1 GHz 30 33 − dB

f = 2.2 GHz 35 38 − dB

f = 2.2 GHz − 4.9 5.3 dB

2−3 dB below flat gain at 1 GHz 3.1 3.6 − GHz

21

f = 2.2 GHz 3 3.4 −−

saturated load power f = 1 GHz 8 9.7 − dBm

f = 2.2 GHz 3.5 5.6 − dBm

load power at 1 dB gain compression; f = 1 GHz 4 6.0 − dBm

at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 − dBm

input intercept point f = 1 GHz −4 −2 − dBm

f = 2.2 GHz −9 −7 − dBm

output intercept point f = 1 GHz 16 18 − dBm

f = 2.2 GHz 11 13 − dBm

2002 Sep 06 4

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

APPLICATION INFORMATION

Figure 2 shows a typical application circuit for the
BGM1012 MMIC. The device is internally matched to
50 Ω, and therefore does not need any external matching.
The value of the input and output DC blocking capacitors
C2 and C3 should not be more than 100 pF for
applicationsabove100 MHz. However, when the device is
operated below 100 MHz, the capacitor value should be
increased.

The nominal value of the RF choke L1 is 100 nH. At
frequencies below 100 MHz this value should be
increased to 220 nH. At frequencies above 1 GHz a much
lower value (e.g. 10 nH) can be used to improve return
losses. For optimal results, a good quality chip inductor
such as the TDK MLG 1608 (0603), or a wire-wound SMD
type should be chosen.

Both the RF choke L1 and the 22 nF supply decoupling
capacitor C1 should be located as closely as possible to
the MMIC.

Separate paths must be used for the ground planes of the
groundpinsGND1andGND2,andthesepathsmustbeas
short as possible. When using vias, use multiple vias per
pin in order to limit ground path inductance.

InFig.6theMMICisused as a driver to the power amplifier
as part of a transmitter circuit. Good linear performance
and matched input and output offer quick design solutions
in such applications.

handbook, halfpage

DC-block

100 pF

input output

DC-block

100 pF

DC-block

100 pF

MGU437

Fig.3 Easy cascading application circuit.

oscillator

mixer

wideband

amplifier

to IF circuit
or demodulator

MGU438

handbook, halfpage

from RF

circuit

V

handbook, halfpage

s

RF input

C1

V

s

RF outRF in

C2 C3

GND2GND1

L1

RF output

MGU436

Fig.2 Typical application circuit.

Figure 3 shows two cascaded MMICs. This configuration
doubles overall gain while preserving broadband
characteristics. Supply decoupling and grounding
conditions for each MMIC are the same as those for the
circuit of Fig.2.

The excellent wideband characteristics of the MMIC make
it an ideal building block in IF amplifier applications such
as LBNs (see Fig.4).

As a buffer amplifier between an LNA and a mixer in a
receiver circuit, the MMIC offers an easy matching, low
noise solution (see Fig.5).

handbook, halfpage

antenna

handbook, halfpage

from modulation

or IF circuit

Fig.6 Application as driver amplifier.

Fig.4 Application as IF amplifier.

LNA

mixer

wideband

amplifier

oscillator

to IF circuit
or demodulator

Fig.5 Application as RF amplifier.

mixer

wideband

amplifier

oscillator

MGU439

to power
amplifier

MGU440

2002 Sep 06 5

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

handbook, full pagewidth

180°

IS= 14.6 mA; VS= 3 V; PD= −30 dBm; ZO=50Ω.

Fig.7 Input reflection coefficient (s11); typical values.

135°

+0.2

0

−0.2

−135°

+0.5

0.2 0.5

−0.5

4 GHz

90°

+1

−1

−90°

100 MHz

+2

2 5

−2

45°

−45°

+5

−5

MLD910

1.0

0.8

0.6

0.4

0.2

0°

0

1.0

handbook, full pagewidth

180°

IS= 14.6 mA; VS= 3 V; PD= −30 dBm; ZO=50Ω.

Fig.8 Output reflection coefficient (s22); typical values.

135°

+0.2

0

−0.2

−135°

+0.5

0.2 0.5

−0.5

90°

+1

100 MHz

1 2 5

4 GHz

−1

−90°

1.0

45°

+2

+5

−5

−2

−45°

MLD911

0.8

0.6

0.4

0.2

0°

0

1.0

2002 Sep 06 6

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

3000

MLD912

f (MHz)

handbook, halfpage

0

2

s

12

(dB)

−10

−20

−30

−40

−50

0 1000

IS= 14.6 mA; VS= 3 V; PD= −30 dBm; ZO=50Ω.

2000 4000

Fig.9 Isolation(s122)asafunctionoffrequency;

typical values.

25

handbook, halfpage

2

s

21

(dB)

20

15

10

0

PD= −30 dBm; ZO=50Ω.
(1) IS= 18.7 mA; VS= 3.3 V.
(2) IS= 14.6 mA; VS=3V.
(3) IS= 10.6 mA; VS= 2.7 V.

1000 2000 4000

3000

(1)

(2)
(3)

f (MHz)

Fig.10 Insertion gain (s212) as a function of

frequency; typical values.

MLD913

−10

MLD914

(2)

PD (dBm)

20

handbook, halfpage

P

L

(dBm)

10

0

−10

−20

−40 −30

f = 1 GHz; ZO=50Ω.
(1) VS= 3.3 V.
(2) VS=3V.
(3) VS= 2.7 V.

(1)

(3)

−20 0

Fig.11 Load power as a function of drive power at

1 GHz; typical values.

−10

MLD915

(2)(3)

PD (dBm)

20

handbook, halfpage

P

L

(dBm)

10

0

−10

−20

−40 −30

f = 2.2 GHz; ZO=50Ω.
(1) VS= 3.3 V.
(2) VS=3V.
(3) VS= 2.7 V.

(1)

−20 0

Fig.12 Load power as a function of drive power at

2.2 GHz; typical values.

2002 Sep 06 7

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

5.5

handbook, halfpage

NF

(dB)

5.3

5.1

4.9

4.7

4.5
0

ZO=50Ω.
(1) IS= 10.6 mA; VS= 2.7 V.
(2) IS= 14.6 mA; VS=3V.
(3) IS= 18.7 mA; VS= 3.3 V.

(1)

(3)

(2)

1000 2000

f (MHz)

Fig.13 Noise figure as a function of frequency;

typical values.

MLD916

3000

12

handbook, halfpage

K

8

4

0

0

IS= 14.6 mA; VS= 3 V; PD= −30 dBm; ZO=50Ω.

1000 2000 40003000

MLD917

f (MHz)

Fig.14 Stability factor as a function of frequency;

typical values.

2002 Sep 06 8

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2002 Sep 06 9

Scattering parameters

VS=3V; IS= 14.6 mA; PD= −30 dBm; ZO=50Ω; T

amb

=25°C.

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

f (MHz)

MAGNITUDE

(ratio)

s

11

ANGLE

(deg)

MAGNITUDE

(ratio)

s

21

ANGLE

(deg)

MAGNITUDE

(ratio)

s

12

ANGLE

(deg)

MAGNITUDE

(ratio)

s

22

ANGLE

FACTOR

(deg)

100 0.25122 14.607 9.33681 12.018 0.032124 16.445 0.26458 64.156 1.6
200 0.27070 2.759 9.42458 5.676 0.028303 6.37 0.20645 64.153 1.8
400 0.27979 −7.969 9.63627 −8.447 0.026297 −4.545 0.1543 52.558 1.9
600 0.28323 −14.78 9.76543 −19.02 0.024833 −10.24 0.15203 39.347 1.9

800 0.28557 −20.13 9.93782 −27.93 0.023234 −14.62 0.16867 27.926 2.0
1000 0.28673 −24.14 10.03633 −36.88 0.021523 −17.42 0.19196 19.293 2.1
1200 0.28517 −27.57 10.11638 −46.47 0.019830 −19.83 0.21421 12.703 2.2
1400 0.27902 −29.93 10.26450 −56.05 0.018230 −21.14 0.23292 7.154 2.4
1600 0.26682 −31.81 10.40572 −65.76 0.016902 −21.62 0.24605 2.582 2.5
1800 0.24746 −33.12 10.44088 −76.97 0.015759 −22.32 0.25113 −1.26 2.7
2000 0.21894 −33.8 10.46224 −88.33 0.014310 −22.64 0.24367 −4.817 3.0
2200 0.18164 −32.67 10.45202 −100.3 0.013012 −23.13 0.22184 −7.573 3.4
2400 0.14000 −26.75 10.34342 −112.6 0.011826 −23.27 0.18787 −8.489 3.9
2600 0.10418 −10.16 9.87989 −122.9 0.010171 −23.23 0.13049 −4.601 4.9
2800 0.09469 15.051 9.20393 −129.5 0.008664 −16.9 0.1294 9.578 6.2
3000 0.10595 33.415 8.68177 −135.4 0.007541 −9.957 0.1127 18.402 7.5
3200 0.11609 42.888 8.18809 −142.2 0.006655 −0.835 0.092234 23.406 9.0
3400 0.10827 50.017 7.93039 −151.5 0.006042 12.444 0.059268 26.453 10.3
3600 0.09866 60.967 7.77538 −162.2 0.006205 29.297 0.015829 38.211 10.3
3800 0.08693 80.355 7.33775 −172.6 0.007039 40.351 0.028159 −152.8 9.6
4000 0.10090 102.07 6.90878 177.1 0.008241 46.053 0.075298 −133.1 8.7

K-

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

PACKAGE OUTLINE

Plastic surface mounted package; 6 leads SOT363

D

y

56

pin 1
index

4

132

e

1

e

b

p

wBM

E

H

E

A

A

1

detail X

AB

Q

L

p

X

v M

A

c

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

A

max

0.1

1

b

cD

p

0.30

0.25

0.20

0.10

IEC JEDEC EIAJ

2.2

1.8

E

1.35

1.15

REFERENCES

1.3

e

e

1

0.65

UNIT

A

1.1

mm

0.8

OUTLINE
VERSION

SOT363 SC-88

2002 Sep 06 10

H

E

2.2

2.0

L

p

0.45

0.15

Qywv

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

DATA SHEET STATUS

PRODUCT

DATA SHEET STATUS

Objective data Development This data sheet contains data from the objective specification for product

Preliminary data Qualification This data sheet contains data from the preliminary specification.

Product data Production This data sheet contains data from the product specification. Philips

(1)

STATUS

(2)

DEFINITIONS

development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.

Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.

Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.

Notes

1. Please consult the most recently issued data sheet before initiating or completing a design.

2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.

DEFINITIONS
Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.

Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratanyotherconditionsabovethosegiveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.

Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythat such applications will be
suitable for the specified use without further testing or
modification.

DISCLAIMERS
Life support applications  These products are not

designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorselling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.

Right to make changes  Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts, conveys no licence or title
under any patent, copyright, or mask work right to these
products,andmakesnorepresentationsorwarrantiesthat
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.

2002 Sep 06 11

Philips Semiconductors – a w orldwide compan y

Contact information

For additional information please visit http://www.semiconductors.philips.com. Fax: [phone]
For sales offices addresses send e-mail to: [e-mail].

© Koninklijke Philips Electronics N.V. 2002
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable andmaybechanged
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.

Printed in The Netherlands 613516/03/pp12 Date of release: 2002 Sep 06 Document order number: 9397 750 10021

SCA74