Philips BGM1012 User Manual

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MBD128

BGM1012

MMIC wideband amplifier

Product specification
Supersedes data of 2002 May 16

2002 Sep 06

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

FEATURES

• Internally matched to 50 Ω

• Very wide frequency range (4 Ghz at 3 dB bandwidth)

• Very flat 20 dB gain (DC to 2.9 Ghz at 1 dB flatness)

• 10 dBm saturated output power at 1 GHz

• High linearity (18 dBm IP3

at 1 GHz)

(out)

• Low current (14.6 mA)

• Unconditionally stable.

APPLICATIONS

• LNB IF amplifiers

• Cable systems

• ISM

• General purpose.

DESCRIPTION

Silicon Monolithic Microwave Integrated Circuit (MMIC)
wideband amplifierwith internal matching circuit in a 6-pin
SOT363 SMD plastic package.

PINNING

PIN DESCRIPTION

1V

S

2, 5 GND2

3 RF out
4 GND1
6RFin

4

56

63

132

Top view

Marking code: C2-.

MAM455

Fig.1 Simplified outline (SOT363) and symbol.

1

2, 54

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
s

S

S

2



21

DC supply voltage 3 4 V
DC supply current 14.6 − mA

insertion power gain f = 1 GHz 20.1 − dB
NF noise figure f = 1 GHz 4.8 − dB
P

L(sat)

saturated load power f = 1 GHz 9.7 − dBm

CAUTION

This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.

2002 Sep 06 2

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

S

I

S

P

tot

T

stg

T

j

P

D

THERMAL CHARACTERISTICS

SYMBOL PARAMETER CONDITIONS VALUE UNIT

R

th j-s

DC supply voltage RF input AC coupled − 4V

supply current − 50 mA

total power dissipation Ts≤ 90 °C − 200 mW

storage temperature −65 +150 °C

operating junction temperature − 150 °C

maximum drive power − 10 dBm

thermal resistance from junction to

P

= 200 mW; Ts≤ 90 °C 300 K/W

tot

solder point

2002 Sep 06 3

Philips Semiconductors Product specification

MMIC wideband amplifier BGM1012

CHARACTERISTICS

VS=3V; IS= 14.6 mA; Tj=25°C; unless otherwise specified.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

S

2

s



21

R

LIN

R

L OUT

2

s12

NF noise figure f = 1 GHz − 4.8 5.1 dB

BW bandwidth at s
K stability factor f = 1 GHz 1.5 2.1 −−

P

L(sat)

P

L1dB

IP3

(in)

IP3

(out)

supply current 11 14.6 19 mA

insertion power gain f = 100 MHz 19 19.5 20 dB

f = 1 GHz 19 20.1 21 dB
f = 1.8 GHz 19 20.4 21 dB
f = 2.2 GHz 19 20.4 22 dB
f = 2.6 GHz 18 19.9 21 dB
f = 3 GHz 16 18.7 20 dB

return losses input f = 1 GHz 9 11 − dB

f = 2.2 GHz 13 15 − dB

return losses output f = 1 GHz 11 14 − dB

f = 2.2 GHz 10 13 − dB

isolation f = 1 GHz 30 33 − dB

f = 2.2 GHz 35 38 − dB

f = 2.2 GHz − 4.9 5.3 dB

2−3 dB below flat gain at 1 GHz 3.1 3.6 − GHz

21

f = 2.2 GHz 3 3.4 −−

saturated load power f = 1 GHz 8 9.7 − dBm

f = 2.2 GHz 3.5 5.6 − dBm

load power at 1 dB gain compression; f = 1 GHz 4 6.0 − dBm

at 1 dB gain compression; f = 2.2 GHz 1.5 3.4 − dBm

input intercept point f = 1 GHz −4 −2 − dBm

f = 2.2 GHz −9 −7 − dBm

output intercept point f = 1 GHz 16 18 − dBm

f = 2.2 GHz 11 13 − dBm

2002 Sep 06 4