Philips BGE884 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BGE884

CATV amplifier module

Product specification
Supersedes data of 1995 Sep 14
File under Discrete Semiconductors, SC16

1997 Apr 14

Philips Semiconductors Product specification

CATV amplifier module BGE884

FEATURES

• Excellent linearity

• Extremely low noise

• Silicon nitride passivation

• Rugged construction

• Gold metallization ensures

excellent reliability.

DESCRIPTION

Hybrid amplifier module for
CATV/MATV systems operating over
a frequency range of 40 to 860 MHz
at a voltage supply of 24 V (DC).

PINNING - SOT115G

PIN DESCRIPTION

1 input (note 1)
2 common
3 common
5 common
6 common
7 common
8+V

B

9 output (note 1)

Note

1. Pins 1 and 9 carry DC voltages.

age

123 5 789

Side view

Fig.1 Simplified outline.

6

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

I

tot

power gain f = 50 MHz 16.5 17.5 dB
total current consumption (DC) VB= 24 V − 150 mA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

MSB049 - 2

SYMBOL PARAMETER MIN. MAX. UNIT

V

B

V

i

T

stg

T

mb

DC supply voltage − 26 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C

1997 Apr 14 2

Philips Semiconductors Product specification

CATV amplifier module BGE884

CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V

=24V; Tmb= 30 °C; ZS=ZL=75Ω

B

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

G

p

power gain f = 50 MHz 16.5 17.5 dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.4 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.3 dB
S

11

input return losses f = 40 MHz; note 1 20 − dB

f = 800 to 860 MHz 10 − dB

S

22

d

2

V

o

output return losses f = 40 to 860 MHz 15 − dB

second order distortion note 2 −−60 dB

output voltage dim= −60 dB; notes 3 and 4 55 − dBmV
F noise figure f = 350 MHz − 7.5 dB

f = 860 MHz − 8dB

I

tot

total current consumption (DC) note 5 − 150 mA

Notes

1. Decreases by 1.5 dB per octave.

2. f

= 349.25 MHz; Vp= 44 dBmV;

p

fq= 403.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 752.5 MHz.

3. fp= 341.25 MHz; Vp=Vo;
fq= 348.25 MHz; Vq=Vo−6 dB;
fr= 350.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 339.25 MHz.

4. fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.

5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.

1997 Apr 14 3