1999 Mar 30 3
Philips Semiconductors Product specification
Optical receiver module BGE847BO/FC
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
B
= 24 V; Tmb=30°C; ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
f frequency range 40 860 MHz
T
stg
storage temperature −40 +85 °C
T
mb
operating mounting base temperature −20 +85 °C
P
in
optical input power continuous − 5mW
ESD ESD sensitivity human body model;
R = 1.5 kΩ; C = 100 pF
500 − V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
S responsivity λ = 1300 nm 750 − V/W
FL flatness of frequency response −±0.5 dB
S
22
output return losses f1= 40 to 860 MHz 11 − dB
optical input return losses 45 − dB
OBR
C
connector optical return losses 60 − dB
IL
C
connector optical insertion losses − 0.5 dB
d
2
second order distortion note 1 −−70 dB
d
3
third order distortion note 2 −−80 dB
F equivalent noise input f
1
= 40 MHz − 7 pA/√Hz
s
λ
spectral sensitivity λ = 1310 ±20 nm 0.85 − A/W
λ = 1550 ±20 nm 0.9 − A/W
λ optical wavelength 1290 1600 nm
L length of optical fibre buffered fibre; SM type; 9/125 µm;
Kevlar buffer: 3 mm
577 627 mm
I
tot
total current consumption (DC) note 3 175 205 mA
I
pin 4
pin diode bias current (DC) − 25 mA
Notes
1. Two laser test; each laser with 40 % modulation index:
fp= 135 MHz; Pp= 0.5 mW;
fq= 189.25 MHz; Pq= 0.5 mW;
measured at fp+fq= 324.25 MHz.
2. Three laser test; each laser with 40 % modulation
index:
fp= 326.25 MHz; Pp= 0.33 mW;
fq= 333.25 MHz; Pq= 0.33 mW;
fr= 335.25 MHz; Pr= 0.33 mW;
measured at fp+fq−fr= 324.25 MHz.
3. The module normally operates at VB= 24 V, but is
able to withstand supply transients up to 30 V.
Fig.2 Monitor current pin.
handbook, halfpage
MLB151
10 kΩ
1 kΩ
Pin 1
photo
current