Philips BGE788 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BGE788
CATV amplifier module
Preliminary specification
File under Discrete Semiconductors, SC16
1997 May 05
Philips Semiconductors Preliminary specification
CATV amplifier module BGE788
FEATURES
• Excellent linearity
• Extremely low noise
• High gain
• Excellent return loss properties.
PINNING SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
B
7, 8 common
APPLICATIONS
9 output
• Single module line extender in CATV systems operating
over a frequency range of 40 to 750 MHz.
handbook, halfpage
DESCRIPTION
2
789
351
The BGE788 is a hybrid high dynamic range amplifier
module operating at a voltage supply of +24 V in a
SOT115J package. The high gain module consists of two
cascaded stages both in cascode configuration.
Side view
Fig.1 Simplified outline.
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 33.5 34.5 dB
f = 750 MHz 34 − dB
I
tot
total current consumption (DC) VB= +24 V − 320 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
mb
T
stg
RF input voltage − 55 dBmV
operating mounting-base temperature −20 +100 °C
storage temperature −40 +100 °C
1997 May 05 2
Philips Semiconductors Preliminary specification
CATV amplifier module BGE788
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 33.5 34.5 dB
SL slope cable equivalent f = 40 to 750 MHz 0.5 2.5 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.5 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 20 − dB
output return losses f = 40 to 80 MHz 20 − dB
phase response f = 50 MHz 135 225 deg
CTB composite triple beat 110 channels flat; V
X
mod
cross modulation 110 channels flat; Vo= 44 dBmV;
CSO composite second order distortion 110 channels flat; V
d
2
V
o
second order distortion note 1 −−64 dB
output voltage dim= −60 dB; note 2 58 − dBmV
F noise figure f = 750 MHz − 7dB
PM positive match f = 40 MHz to 2 GHz − 3dB
I
tot
total current consumption note 3 290 320 mA
= +24 V; T
B
=30°C; ZS=ZL=75Ω.
case
f = 750 MHz 34 − dB
f = 80 to 160 MHz 18.5 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 640 MHz 15.5 − dB
f = 640 to 750 MHz 14 − dB
f = 80 to 160 MHz 18.5 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 640 MHz 15.5 − dB
f = 640 to 750 MHz 14 − dB
measured at 745.25 MHz
measured at 55.25 MHz
measured at 746.5 MHz
= 44 dBmV;
o
= 44 dBmV;
o
−−49 dB
−−51 dB
−−52 dB
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
2. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
3. The module normally operates at VB= +24 V, but is able to withstand supply transients up to +30 V.
1997 May 05 3
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