Philips BGE787B Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGE787B
CATV amplifier module
Objective specification 2000 Apr 26
Philips Semiconductors Objective specification
CATV amplifier module BGE787B
FEATURES
• Excellent linearity
• Extremely low noise
• High gain
• Excellent return loss properties.
APPLICATIONS
• Single moduleline extender in CATV systems operating
in the 40 to 750 MHz frequency range.
DESCRIPTION
Hybridhigh dynamicrange amplifiermoduleoperating ata
supply voltage of 24 V (DC) in a SOT115J package.
The module consists of two cascaded stages both in
cascode configuration.
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3, 7, 8 common
5+V
B
9 output
handbook, halfpage
Side view
2
351
Fig.1 Simplified outline.
789
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 28.5 29.5 dB
f = 750 MHz 29 − dB
I
tot
total current consumption (DC) VB= 24 V 290 320 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 25 V
RF input voltage − 55 dBmV
storage temperature −40 +100 °C
mounting base operating temperature −20 +100 °C
2000 Apr 26 2
Philips Semiconductors Objective specification
CATV amplifier module BGE787B
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB= 24 V; T
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 28.5 29.5 dB
SL slope cable equivalent f = 40 to 750 MHz 0.2 2.2 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.5 dB
s
11
s
22
s
21
input return losses f = 40 to 80 MHz 20 − dB
output return losses f = 40 to 80 MHz 20 − dB
phase response f = 50 MHz 135 225 deg
CTB composite triple beat 110 channels flat;
X
mod
cross modulation 110 channels flat;
CSO composite second order distortion 110 channels flat;
d
2
V
o
second order distortion note1 −−70 dB
output voltage dim= −60 dB; note 2 59 − dBmV
F noise figure f = 750 MHz − 7dB
PM positive match f = 40 MHz to 2 GHz − 3dB
I
tot
total current consumption (DC) note 3 290 320 mA
=30°C; ZS=ZL=75Ω.
case
f = 750 MHz 29 − dB
f = 80 to 160 MHz 18.5 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 640 MHz 15.5 − dB
f = 640 to 750 MHz 14 − dB
f = 80 to 160 MHz 18.5 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 640 MHz 15.5 − dB
f = 640 to 750 MHz 14 − dB
V
= 44 dBmV; measured at
o
745.25 MHz
Vo= 44 dBmV; measured at
55.25 MHz
V
= 44 dBmV; measured at
o
746.5 MHz
−−50 dB
−−54 dB
−−56 dB
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
2. Measured according to DIN45004B;
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2000 Apr 26 3
Loading...