Philips BGD906MI, BGD906 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD906; BGD906MI
860 MHz, 21.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Mar 28
2001 Nov 01
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
DESCRIPTION
PIN
BGD906 BGD906MI
1 input output
2, 3 common common
5+V
B
7, 8 common common
+V
B
9 output input
APPLICATIONS
• CATV systems operating in the 40 to 900 MHz
frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
HybridamplifiermodulesinaSOT115Jpackageoperating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
Side view
Fig.1 Simplified outline SOT115J.
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 21.2 21.8 dB
f = 900 MHz 22 23 dB
I
tot
total current consumption (DC) VB=24V; Tmb=35°C 405 435 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 40 to 900 MHz 0.5 1 1.5 dB
FL flatness straight line f = 40 to 900 MHz −−±0.35 dB
s
11
s
22
s
21
CTB composite triple beat 49 chs flat; V
X
mod
power gain f = 50 MHz 21.2 21.5 21.8 dB
f = 900 MHz 22 22.5 23 dB
input return losses f = 40 to 80 MHz 22 25 − dB
f = 80 to 160 MHz 21 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 550 MHz 17 23 − dB
f = 550 to 900 MHz 16 20 − dB
output return losses f = 40 to 80 MHz 22 25 − dB
f = 80 to 160 MHz 21 25 − dB
f = 160 to 320 MHz 20 23 − dB
f = 320 to 550 MHz 19 22 − dB
f = 550 to 650 MHz 18 24 − dB
f = 650 to 750 MHz 17 23 − dB
f = 750 to 900 MHz 16 21 − dB
phase response f = 50 MHz −45 − +45 deg
= 47 dBmV; fm= 859.25 MHz −−68.5 −66 dB
o
77 chs flat; V
110 chs flat; V
129 chs flat; V
110 chs; f
= 44 dBmV; fm= 547.25 MHz −−70 −67 dB
o
= 44 dBmV; fm= 745.25 MHz −−63 −61 dB
o
= 44 dBmV; fm= 859.25 MHz −−59 −57 dB
o
= 397.25 MHz;
m
−−62.5 −60.5 dB
Vo= 49 dBmV at 550 MHz; note 1
129 chs; f
= 697.25 MHz;
m
−−57 −54.5 dB
Vo= 49.5 dBmV at 860 MHz; note 2
cross modulation 49 chs flat; Vo= 47 dBmV; fm= 55.25 MHz −−64 −62 dB
77 chs flat; V
110 chs flat; V
129 chs flat; V
110 chs; f
= 44 dBmV; fm= 55.25 MHz −−67.5 −65 dB
o
= 44 dBmV; fm= 55.25 MHz −−64 −61.5 dB
o
= 44 dBmV; fm= 55.25 MHz −−61 −60 dB
o
= 397.25 MHz;
m
−−60 −58 dB
Vo= 49 dBmV at 550 MHz; note 1
129 chs; f
= 859.25 MHz;
m
−−56.5 −55 dB
Vo= 49.5 dBmV at 860 MHz; note 2
2001 Nov 01 3
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second
order distortion
d
2
V
o
second order distortion note 3 −−83 −70 dB
output voltage dim= −60 dB; note 6 63.5 64.5 − dBmV
NF noise figure f = 50 MHz − 5 5.5 dB
I
tot
total current
consumption (DC)
49 chs flat; Vo= 47 dBmV; fm= 860.5 MHz −−63 −59 dB
77 chs flat; V
110 chs flat; V
129 chs flat; V
110 chs; f
= 44 dBmV; fm= 548.5 MHz −−74 −65 dB
o
= 44 dBmV; fm= 746.5 MHz −−66 −58 dB
o
= 44 dBmV; fm= 860.5 MHz −−59 −54 dB
o
= 150 MHz;
m
−−64 −60 dB
Vo= 49 dBmV at 550 MHz; note 1
129 chs; f
= 150 MHz;
m
−−60 −54 dB
Vo= 49.5 dBmV at 860 MHz; note 2
note 4 −−81.5 −73 dB
note 5 −−79 −76 dB
d
= −60 dB; note 7 64.5 66.5 − dBmV
im
d
= −60 dB; note 8 66.5 69 − dBmV
im
CTB compression = 1 dB; 129 chs flat;
48.5 49 − dBmV
f = 859.25 MHz
CSO compression = 1 dB; 129 chs flat;
51 54 − dBmV
f = 860.5 MHz
f = 550 MHz − 4.5 5 dB
f = 750 MHz − 56dB
f = 900 MHz − 6 7.5 dB
note 9 405 420 435 mA
Notes
1. Tilt = 9 dB (50 to 550 MHz)
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 493.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
2001 Nov 01 4
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo;
fq= 547.25 MHz; Vq=Vo−6 dB;
fr= 549.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is
able to withstand supply transients up to 35 V.
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