Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD906; BGD906MI
860 MHz, 21.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2000 Mar 28
2001 Nov 01
Page 2
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
DESCRIPTION
PIN
BGD906 BGD906MI
1 input output
2, 3 common common
5+V
B
7, 8 common common
+V
B
9 output input
APPLICATIONS
• CATV systems operating in the 40 to 900 MHz
frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
HybridamplifiermodulesinaSOT115Jpackageoperating
with a voltage supply of 24 V (DC). Both modules are
electrically identical, only the pinning is different.
Side view
Fig.1 Simplified outline SOT115J.
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 21.2 21.8 dB
f = 900 MHz 22 23 dB
I
tot
total current consumption (DC) VB=24V; Tmb=35°C 405 435 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 01 2
Page 3
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 40 to 900 MHz 0.5 1 1.5 dB
FL flatness straight line f = 40 to 900 MHz −−±0.35 dB
s
11
s
22
s
21
CTB composite triple beat 49 chs flat; V
X
mod
power gain f = 50 MHz 21.2 21.5 21.8 dB
f = 900 MHz 22 22.5 23 dB
input return losses f = 40 to 80 MHz 22 25 − dB
f = 80 to 160 MHz 21 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 550 MHz 17 23 − dB
f = 550 to 900 MHz 16 20 − dB
output return losses f = 40 to 80 MHz 22 25 − dB
f = 80 to 160 MHz 21 25 − dB
f = 160 to 320 MHz 20 23 − dB
f = 320 to 550 MHz 19 22 − dB
f = 550 to 650 MHz 18 24 − dB
f = 650 to 750 MHz 17 23 − dB
f = 750 to 900 MHz 16 21 − dB
phase response f = 50 MHz −45 − +45 deg
= 47 dBmV; fm= 859.25 MHz −−68.5 −66 dB
o
77 chs flat; V
110 chs flat; V
129 chs flat; V
110 chs; f
= 44 dBmV; fm= 547.25 MHz −−70 −67 dB
o
= 44 dBmV; fm= 745.25 MHz −−63 −61 dB
o
= 44 dBmV; fm= 859.25 MHz −−59 −57 dB
o
= 397.25 MHz;
m
−−62.5 −60.5 dB
Vo= 49 dBmV at 550 MHz; note 1
129 chs; f
= 697.25 MHz;
m
−−57 −54.5 dB
Vo= 49.5 dBmV at 860 MHz; note 2
cross modulation 49 chs flat; Vo= 47 dBmV; fm= 55.25 MHz −−64 −62 dB
77 chs flat; V
110 chs flat; V
129 chs flat; V
110 chs; f
= 44 dBmV; fm= 55.25 MHz −−67.5 −65 dB
o
= 44 dBmV; fm= 55.25 MHz −−64 −61.5 dB
o
= 44 dBmV; fm= 55.25 MHz −−61 −60 dB
o
= 397.25 MHz;
m
−−60 −58 dB
Vo= 49 dBmV at 550 MHz; note 1
129 chs; f
= 859.25 MHz;
m
−−56.5 −55 dB
Vo= 49.5 dBmV at 860 MHz; note 2
2001 Nov 01 3
Page 4
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second
order distortion
d
2
V
o
second order distortion note 3 −−83 −70 dB
output voltage dim= −60 dB; note 6 63.5 64.5 − dBmV
NF noise figure f = 50 MHz − 5 5.5 dB
I
tot
total current
consumption (DC)
49 chs flat; Vo= 47 dBmV; fm= 860.5 MHz −−63 −59 dB
77 chs flat; V
110 chs flat; V
129 chs flat; V
110 chs; f
= 44 dBmV; fm= 548.5 MHz −−74 −65 dB
o
= 44 dBmV; fm= 746.5 MHz −−66 −58 dB
o
= 44 dBmV; fm= 860.5 MHz −−59 −54 dB
o
= 150 MHz;
m
−−64 −60 dB
Vo= 49 dBmV at 550 MHz; note 1
129 chs; f
= 150 MHz;
m
−−60 −54 dB
Vo= 49.5 dBmV at 860 MHz; note 2
note 4 −−81.5 −73 dB
note 5 −−79 −76 dB
d
= −60 dB; note 7 64.5 66.5 − dBmV
im
d
= −60 dB; note 8 66.5 69 − dBmV
im
CTB compression = 1 dB; 129 chs flat;
48.5 49 − dBmV
f = 859.25 MHz
CSO compression = 1 dB; 129 chs flat;
51 54 − dBmV
f = 860.5 MHz
f = 550 MHz − 4.5 5 dB
f = 750 MHz − 56dB
f = 900 MHz − 6 7.5 dB
note 9 405 420 435 mA
Notes
1. Tilt = 9 dB (50 to 550 MHz)
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV;
fq= 493.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
2001 Nov 01 4
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo;
fq= 547.25 MHz; Vq=Vo−6 dB;
fr= 549.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is
able to withstand supply transients up to 35 V.
Page 5
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
−50
handbook, halfpage
MGS661
CTB
(dB)
−60
(1)
(2)
(3)
(4)
−70
(1)
−80
−90
0
200
400 600 800
f (MHz)
ZS=ZL=75Ω; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
(2)
(3)
(4)
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
X
mod
(dB)
(2)
−60
(3)
(4)
(1)
MGS662
(2)
(3)
(4)
−70
(1)
−80
−90
0
200
400 600 800
f (MHz)
ZS=ZL=75Ω; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
(3) Typ.
(4) Typ. −3 σ.
Fig.3 Crossmodulationasafunctionof frequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
(1)
−60
(2)
−70
(3)
(4)
−80
−90
0
=75Ω; VB= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);
Z
S=ZL
tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200
(3) Typ.
(4) Typ. −3 σ.
400 600 800
f (MHz)
Fig.4 Composite second order distortion as a
function of frequency under tilted
conditions.
MGS663
(2)
(1)
(3)
(4)
52
V
o
(dBmV)
48
44
40
36
2001 Nov 01 5
Page 6
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
−50
handbook, halfpage
CTB
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
MGS664
(1)
(2)
(3)
(4)
f (MHz)
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
X
mod
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 129 chs;
tilt = 12.5 dB (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
(3) Typ.
(4) Typ. −3 σ.
(1)
400 600 800
MGS665
(2)
(3)
(4)
f (MHz)
Fig.6 Crossmodulationasafunctionof frequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
Z
S=ZL
tilt = 12.5 dB (50 to 860 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
=75Ω; VB= 24 V; 129 chs;
400 600 800
(3) Typ.
(4) Typ. −3 σ.
(1)
(2)
(3)
(4)
f (MHz)
Fig.7 Composite second order distortion as a
function of frequency under tilted
conditions.
MGS666
52
V
o
(dBmV)
48
44
40
36
2001 Nov 01 6
Page 7
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
−20
handbook, halfpage
CTB
(dB)
−30
−40
−50
−60
−70
ZS=ZL=75Ω; VB= 24 V; 129 chs; fm= 859.25 MHz.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
(1)
(2)
(3)
40
45
50 55
MGS667
Vo (dBmV)
Fig.8 Compositetriplebeatasafunctionofoutput
voltage.
−20
handbook, halfpage
CSO
(dB)
−30
−40
−50
−60
−70
ZS=ZL=75Ω; VB= 24 V; 129 chs; fm= 860.5 MHz.
(1) Typ. +3 σ.
(2) Typ.
(3) Typ. −3 σ.
(1)
(2)
(3)
40
45
50 55
Vo (dBmV)
Fig.9 Composite second order distortion as a
function of output voltage.
MGS668
2001 Nov 01 7
Page 8
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
E
A
2
A
L
F
S
Z p
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0 5 10 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
2001 Nov 01 8
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 9
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseoratany other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 01 9
Page 10
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
NOTES
2001 Nov 01 10
Page 11
Philips Semiconductors Product specification
860 MHz, 21.5 dB gain power doubler amplifier BGD906; BGD906MI
NOTES
2001 Nov 01 11
Page 12
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613518/04/pp12 Date of release: 2001 Nov 01 Document order number: 9397 750 08863
SCA73
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