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M3D252
BGD904L
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 1999 Aug 17
2001 Nov 01
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability
• Low DC current consumption.
APPLICATIONS
• CATV systems operating in the 40 to 900 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module ina SOT115J package operating
with a supply voltage of 24 V.
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 19.7 20.3 dB
f = 900 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 350 380 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
CHARACTERISTICS
Bandwidth 40 to 900 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 40 to 900 MHz 0.4 0.9 1.4 dB
FL flatness straight line f = 40 to 900 MHz −±0.15 ±0.3 dB
S
11
S
22
S
21
CTB composite triple beat 49 channels flat; V
X
mod
power gain f = 50 MHz 19.7 20 20.3 dB
f = 900 MHz 20.5 21 21.5 dB
input return losses f = 40 to 80 MHz 21 25 − dB
f = 80 to 160 MHz 22 30 − dB
f = 160 to 320 MHz 21 29 − dB
f = 320 to 550 MHz 18 24 − dB
f = 550 to 650 MHz 17 22 − dB
f = 650 to 900 MHz 16 21 − dB
output return losses f = 40 to 80 MHz 25 29 − dB
f = 80 to 160 MHz 23 28 − dB
f = 160 to 320 MHz 19 25 − dB
f = 320 to 750 MHz 18 24 − dB
f = 750 to 900 MHz 17 23 − dB
phase response f = 50 MHz −45 − +45 deg
= 47 dBmV;
o
−−65.5 −64 dB
fm= 859.25 MHz
77 channels flat; V
= 44 dBmV;
o
−−67.5 −65.5 dB
fm= 547.25 MHz
110 channels flat; V
= 44 dBmV;
o
−−61 −59.5 dB
fm= 745.25 MHz
129 channels flat; V
= 44 dBmV;
o
−−57 −55 dB
fm= 859.25 MHz
110 channels; f
= 397.25 MHz;
m
−−61.5 −59.5 dB
Vo= 49 dBmV at 550 MHz; note 1
129 channels; f
= 649.25 MHz;
m
−−56 −54 dB
Vo= 49.5 dBmV at 860 MHz; note 2
cross modulation 49 channels flat; Vo= 47 dBmV;
−−64 −61 dB
fm= 55.25 MHz
77 channels flat; V
= 44 dBmV;
o
−−66.5 −64 dB
fm= 55.25 MHz
110 channels flat; V
= 44 dBmV;
o
−−63 −60.5 dB
fm= 55.25 MHz
129 channels flat; V
= 44 dBmV;
o
−−61.5 −59 dB
fm= 55.25 MHz
110 channels; f
= 397.25 MHz;
m
−−60 −57.5 dB
Vo= 49 dBmV at 550 MHz; note 1
129 channels; f
= 859.25 MHz;
m
−−56 −53.5 dB
Vo= 49.5 dBmV at 860 MHz; note 2
2001 Nov 01 3
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second order
distortion
d
2
V
o
second order distortion note 3 −−82 −75 dB
output voltage dim= −60 dB; note 6 62.5 64 − dBmV
NF noise figure f = 50 MHz − 3.8 5 dB
I
tot
total current consumption (DC) note 9 350 365 380 mA
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at −6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+fq= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 691.25 MHz; Vq= 44 dBmV; measured at fp+fq= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV; fq= 493.25 MHz; Vq= 44 dBmV; measured at fp+fq= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo; fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 849.25 MHz.
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo; fq= 747.25 MHz; Vq=Vo−6 dB; fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo; fq= 547.25 MHz; Vq=Vo−6 dB; fr= 549.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
49 channels flat; Vo= 47 dBmV;
−−69 −63 dB
fm= 860.5 MHz
77 channels flat; V
= 44 dBmV;
o
−−73 −68 dB
fm= 548.5 MHz
110 channels flat; V
= 44 dBmV;
o
−−69 −63 dB
fm= 746.5 MHz
129 channels flat; V
= 44 dBmV;
o
−−65 −59 dB
fm= 860.5 MHz
110 channels; f
= 150 MHz;
m
−−68 −63 dB
Vo= 49 dBmV at 550 MHz; note 1
129 channels; f
= 150 MHz;
m
−−63 −58 dB
Vo= 49.5 dBmV at 860 MHz; note 2
note 4 −−83 −76 dB
note 5 −−83 −77 dB
d
= −60 dB; note 7 63.5 65.5 − dBmV
im
d
= −60 dB; note 8 65.5 67.5 − dBmV
im
CTB compression = 1 dB;
47.5 48.5 − dBmV
129 channels flat; f = 859.25 MHz
CSO compression=1dB;
50 52 − dBmV
129 channels flat; f = 860.5 MHz
f = 550 MHz − 4.1 5.5 dB
f = 750 MHz − 4.8 6.5 dB
f = 900 MHz − 5.9 7.5 dB
2001 Nov 01 4