Philips BGD904L User Manual

DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD904L
860 MHz, 20 dB gain power doubler amplifier
Product specification Supersedes data of 1999 Aug 17
2001 Nov 01
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L

FEATURES

Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability
Low DC current consumption.

APPLICATIONS

CATV systems operating in the 40 to 900 MHz frequency range.

DESCRIPTION

Hybrid amplifier module ina SOT115J package operating with a supply voltage of 24 V.

QUICK REFERENCE DATA

PINNING - SOT115J
PIN DESCRIPTION
1 input 2 common 3 common 5+V 7 common 8 common 9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 19.7 20.3 dB
f = 900 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 350 380 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage 30 V RF input voltage 70 dBmV storage temperature 40 +100 °C operating mounting base temperature 20 +100 °C
2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L

CHARACTERISTICS

Bandwidth 40 to 900 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 40 to 900 MHz 0.4 0.9 1.4 dB FL flatness straight line f = 40 to 900 MHz −±0.15 ±0.3 dB S
11
S
22
S
21
CTB composite triple beat 49 channels flat; V
X
mod
power gain f = 50 MHz 19.7 20 20.3 dB
f = 900 MHz 20.5 21 21.5 dB
input return losses f = 40 to 80 MHz 21 25 dB
f = 80 to 160 MHz 22 30 dB f = 160 to 320 MHz 21 29 dB f = 320 to 550 MHz 18 24 dB f = 550 to 650 MHz 17 22 dB f = 650 to 900 MHz 16 21 dB
output return losses f = 40 to 80 MHz 25 29 dB
f = 80 to 160 MHz 23 28 dB f = 160 to 320 MHz 19 25 dB f = 320 to 750 MHz 18 24 dB f = 750 to 900 MHz 17 23 dB
phase response f = 50 MHz 45 +45 deg
= 47 dBmV;
o
−−65.5 64 dB
fm= 859.25 MHz 77 channels flat; V
= 44 dBmV;
o
−−67.5 65.5 dB
fm= 547.25 MHz 110 channels flat; V
= 44 dBmV;
o
−−61 59.5 dB
fm= 745.25 MHz 129 channels flat; V
= 44 dBmV;
o
−−57 55 dB
fm= 859.25 MHz 110 channels; f
= 397.25 MHz;
m
−−61.5 59.5 dB
Vo= 49 dBmV at 550 MHz; note 1 129 channels; f
= 649.25 MHz;
m
−−56 54 dB
Vo= 49.5 dBmV at 860 MHz; note 2
cross modulation 49 channels flat; Vo= 47 dBmV;
−−64 61 dB
fm= 55.25 MHz 77 channels flat; V
= 44 dBmV;
o
−−66.5 64 dB
fm= 55.25 MHz 110 channels flat; V
= 44 dBmV;
o
−−63 60.5 dB
fm= 55.25 MHz 129 channels flat; V
= 44 dBmV;
o
−−61.5 59 dB
fm= 55.25 MHz 110 channels; f
= 397.25 MHz;
m
−−60 57.5 dB
Vo= 49 dBmV at 550 MHz; note 1 129 channels; f
= 859.25 MHz;
m
−−56 53.5 dB
Vo= 49.5 dBmV at 860 MHz; note 2
2001 Nov 01 3
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD904L
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second order
distortion
d
2
V
o
second order distortion note 3 −−82 75 dB
output voltage dim= 60 dB; note 6 62.5 64 dBmV
NF noise figure f = 50 MHz 3.8 5 dB
I
tot
total current consumption (DC) note 9 350 365 380 mA
Notes
1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at 6 dB offset (550 to 750 MHz).
2. Tilt = 12.5 dB (50 to 860 MHz).
3. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+fq= 860.5 MHz.
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 691.25 MHz; Vq= 44 dBmV; measured at fp+fq= 746.5 MHz.
5. fp= 55.25 MHz; Vp= 44 dBmV; fq= 493.25 MHz; Vq= 44 dBmV; measured at fp+fq= 548.5 MHz.
6. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo; fq= 858.25 MHz; Vq=Vo−6 dB; fr= 860.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 849.25 MHz.
7. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo; fq= 747.25 MHz; Vq=Vo−6 dB; fr= 749.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 738.25 MHz.
8. Measured according to DIN45004B:
fp= 540.25 MHz; Vp=Vo; fq= 547.25 MHz; Vq=Vo−6 dB; fr= 549.25 MHz; Vr=Vo−6 dB; measured at fp+fq−fr= 538.25 MHz.
9. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
49 channels flat; Vo= 47 dBmV;
−−69 63 dB
fm= 860.5 MHz 77 channels flat; V
= 44 dBmV;
o
−−73 68 dB
fm= 548.5 MHz 110 channels flat; V
= 44 dBmV;
o
−−69 63 dB
fm= 746.5 MHz 129 channels flat; V
= 44 dBmV;
o
−−65 59 dB
fm= 860.5 MHz 110 channels; f
= 150 MHz;
m
−−68 63 dB
Vo= 49 dBmV at 550 MHz; note 1 129 channels; f
= 150 MHz;
m
−−63 58 dB
Vo= 49.5 dBmV at 860 MHz; note 2
note 4 −−83 76 dB note 5 −−83 77 dB
d
= 60 dB; note 7 63.5 65.5 dBmV
im
d
= 60 dB; note 8 65.5 67.5 dBmV
im
CTB compression = 1 dB;
47.5 48.5 dBmV
129 channels flat; f = 859.25 MHz CSO compression=1dB;
50 52 dBmV
129 channels flat; f = 860.5 MHz
f = 550 MHz 4.1 5.5 dB f = 750 MHz 4.8 6.5 dB f = 900 MHz 5.9 7.5 dB
2001 Nov 01 4
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