Philips BGD885 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D248
BGD885
860 MHz, 17 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115D
PIN DESCRIPTION
1 input
2, 3, 5, 6, 7 common
4 10 V, 200 mA supply terminal
8+V
B
9 output
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
handbook, halfpage
Side view
246
351
789
MBK049
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
I
tot
power gain f = 50 MHz 16.5 17.5 dB
total current consumption (DC) VB= 24 V − 450 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
DC supply voltage − 26 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 02 2
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.5 dB
S
11
S
22
d
2
V
o
F noise figure f = 50 MHz − 8dB
I
tot
power gain f = 50 MHz 16.5 17.5 dB
input return losses f = 40 MHz; note 1 20 − dB
f = 800 to 860 MHz 10 − dB
output return losses f = 40 MHz; note 1 20 − dB
f = 800 to 860 MHz 10 − dB
second order distortion note 2 −−53 dB
output voltage dim= −60 dB; note 3 64 − dBmV
d
= −60 dB; note 4 63 − dBmV
im
f = 550 MHz − 8dB
f = 650 MHz − 8dB
f = 750 MHz − 8dB
f = 860 MHz − 8dB
total current consumption (DC) note 5 − 450 mA
Notes
1. Decrease per octave of 1.5 dB.
2. V
= 59 dBmV at fp= 349.25 MHz;
p
Vq= 59 dBmV at fq= 403.25 MHz;
measured at fp+fq= 752.5 MHz.
3. Measured according to DIN45004B:
fp= 341.25 MHz; Vp=Vo;
fq= 348.25 MHz; Vq=Vo−6 dB;
fr= 350.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 339.25 MHz.
4. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02 3
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