Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D248
BGD885
860 MHz, 17 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
Page 2
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115D
PIN DESCRIPTION
1 input
2, 3, 5, 6, 7 common
4 10 V, 200 mA supply terminal
8+V
B
9 output
DESCRIPTION
Hybrid amplifier module for CATV/MATV systems
operating over a frequency range of 40 to 860 MHz at a
voltage supply of 24 V (DC).
handbook, halfpage
Side view
246
351
789
MBK049
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
I
tot
power gain f = 50 MHz 16.5 17.5 dB
total current consumption (DC) VB= 24 V − 450 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
DC supply voltage − 26 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 02 2
Page 3
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.6 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.5 dB
S
11
S
22
d
2
V
o
F noise figure f = 50 MHz − 8dB
I
tot
power gain f = 50 MHz 16.5 17.5 dB
input return losses f = 40 MHz; note 1 20 − dB
f = 800 to 860 MHz 10 − dB
output return losses f = 40 MHz; note 1 20 − dB
f = 800 to 860 MHz 10 − dB
second order distortion note 2 −−53 dB
output voltage dim= −60 dB; note 3 64 − dBmV
d
= −60 dB; note 4 63 − dBmV
im
f = 550 MHz − 8dB
f = 650 MHz − 8dB
f = 750 MHz − 8dB
f = 860 MHz − 8dB
total current consumption (DC) note 5 − 450 mA
Notes
1. Decrease per octave of 1.5 dB.
2. V
= 59 dBmV at fp= 349.25 MHz;
p
Vq= 59 dBmV at fq= 403.25 MHz;
measured at fp+fq= 752.5 MHz.
3. Measured according to DIN45004B:
fp= 341.25 MHz; Vp=Vo;
fq= 348.25 MHz; Vq=Vo−6 dB;
fr= 350.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 339.25 MHz.
4. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
5. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02 3
Page 4
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
BGD885
1
23456789
input
10 V
C1
C2
VB= 24 V
output
MEA094-2
Fig.2 Test circuit.
List of components (see Fig.2)
COMPONENT DESCRIPTION VALUE
C1 ceramic multilayer capacitor 1 nF (max.)
C2 ceramic multilayer capacitor 1 nF
R resistor 56 Ω, 2W
2001 Nov 02 4
Page 5
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 9 gold-plated in-line leads
D
E
A
2
A
L
F
S
Z
1
564
78923
SOT115D
B
U
c
d
U
Q
2
yM
B
P
1
q
0 5 10 mm
W
scale
e
1
e
b
q
2
q
1
y M
B
w
yM
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115D
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
2001 Nov 02 5
∅ P
4.15
3.85
max.
Q
q
q
2.4 38.1 25.4
U
q
1
2
10.2 4.2 44.75 8 0.25 0.1 3.8
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
ISSUE DATE
97-04-10
Z
yw
max.
Page 6
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting valuesdefinition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
atthese or at anyotherconditions above those giveninthe
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationor warranty that such applications willbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expectedto result inpersonal injury. Philips
Semiconductorscustomersusingor selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseof any of theseproducts,conveysno licence or title
under any patent, copyright, or mask work right to these
products,and makes no representationsorwarranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
2001 Nov 02 6
Page 7
Philips Semiconductors Product specification
860 MHz, 17 dB gain power doubler amplifier BGD885
NOTES
2001 Nov 02 7
Page 8
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax:+31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613518/07/pp8 Date of release: 2001 Nov 02 Document order number: 9397 750 09031
SCA73
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