DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD816L
CATV amplifier module
Objective specification 2000 Apr 12
Philips Semiconductors Objective specification
CATV amplifier module BGD816L
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 and 3 common
5+V
B
7 and 8 common
9 output
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
Side view
MSA319
Hybrid amplifier module ina SOT115J package operating
with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 21.2 21.8 dB
f = 870 MHz 22 23 dB
I
tot
total current consumption (DC) VB= 24 V 345 375 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2000 Apr 12 2
Philips Semiconductors Objective specification
CATV amplifier module BGD816L
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 45 to 870 MHz; note 1 0.5 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
s
11
s
22
s
21
CTB composite triple beat 79 chs flat; V
X
mod
power gain f = 45 MHz 21.2 − 21.8 dB
f = 870 MHz 22 − 23 dB
f = 100 to 800 MHz −−±0.5 dB
f = 800 to 870 MHz −−±0.15 dB
input return losses f = 45 to 80 MHz 21 −−dB
f = 80 to 160 MHz 20 −−dB
f = 160 to 320 MHz 19 −−dB
f = 320 to 550 MHz 18 −−dB
f = 550 to 650 MHz 17 −−dB
f = 650 to 750 MHz 16 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 14 −−dB
output return losses f = 45 to 80 MHz 21 −−dB
f = 80 to 160 MHz 20 −−dB
f = 160 to 320 MHz 19 −−dB
f = 320 to 550 MHz 18 −−dB
f = 550 to 650 MHz 17 −−dB
f = 650 to 750 MHz 16 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 14 −−dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV; fm= 547.25 MHz −−−64 dB
o
112 chs flat; V
132 chs flat; V
112 chs; f
= 44 dBmV; fm= 745.25 MHz −−−58 dB
o
= 44 dBmV; fm= 859.25 MHz −−−54 dB
o
= tbd MHz; Vo= 48.2 dBmV at
m
−−−57 dB
745 MHz; note 2
79 chs; f
= tbd MHz; Vo= 45.3 dBmV at
m
−−−65 dB
547 MHz; note 3
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−63 dB
112 chs flat; V
132 chs flat; V
112 chs; f
= 44 dBmV; fm= 55.25 MHz −−−59 dB
o
= 44 dBmV; fm= 55.25 MHz −−−58 dB
o
= tbd MHz; Vo= 48.2 dBmV at
m
−−−54.5 dB
745 MHz; note 2
79 chs; f
= tbd MHz; Vo= 45.3 dBmV at
m
−−−63.5 dB
547 MHz; note 3
2000 Apr 12 3