Philips BGD816 Datasheet

DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
BGD816
CATV amplifier module
Objective specification 2000 Apr 12
Philips Semiconductors Objective specification
CATV amplifier module BGD816
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 and 3 common
5+V
B
7 and 8 common
9 output
APPLICATIONS
CATV systems operating in the 40 to 870 MHz frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
Side view
MSA319
Hybrid amplifier module ina SOT115J package operating with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 21.2 21.8 dB
f = 870 MHz 22 23 dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage 30 V RF input voltage 70 dBmV storage temperature 40 +100 °C operating mounting base temperature 20 +100 °C
2000 Apr 12 2
Philips Semiconductors Objective specification
CATV amplifier module BGD816
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 45 to 870 MHz; note 1 0.5 1 1.5 dB FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
s
11
s
22
s
21
CTB composite triple beat 79 chs flat; V
X
mod
power gain f = 45 MHz 21.2 21.8 dB
f = 870 MHz 22 23 dB
f = 100 to 800 MHz −−±0.5 dB f = 800 to 870 MHz −−±0.15 dB
input return losses f = 45 to 80 MHz 21 −−dB
f = 80 to 160 MHz 20 −−dB f = 160 to 320 MHz 19 −−dB f = 320 to 550 MHz 18 −−dB f = 550 to 650 MHz 17 −−dB f = 650 to 750 MHz 16 −−dB f = 750 to 870 MHz 15 −−dB f = 870 to 914 MHz 14 −−dB
output return losses f = 45 to 80 MHz 21 −−dB
f = 80 to 160 MHz 20 −−dB f = 160 to 320 MHz 19 −−dB f = 320 to 550 MHz 18 −−dB f = 550 to 650 MHz 17 −−dB f = 650 to 750 MHz 16 −−dB f = 750 to 870 MHz 15 −−dB f = 870 to 914 MHz 14 −−dB
phase response f = 50 MHz 45 +45 deg
= 44 dBmV; fm= 547.25 MHz −−−66 dB
o
112 chs flat; V 132 chs flat; V 112 chs; f
= 44 dBmV; fm= 745.25 MHz −−−60 dB
o
= 44 dBmV; fm= 859.25 MHz −−−56 dB
o
= tbd MHz; Vo= 48.2 dBmV at
m
−−−59 dB
745 MHz; note 2 79 chs; f
= tbd MHz; Vo= 45.3 dBmV at
m
−−−67 dB
547 MHz; note 3
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−65 dB
112 chs flat; V 132 chs flat; V 112 chs; f
= 44 dBmV; fm= 55.25 MHz −−−61 dB
o
= 44 dBmV; fm= 55.25 MHz −−−60 dB
o
= tbd MHz; Vo= 48.2 dBmV at
m
−−−56 dB
745 MHz; note 2 79 chs; f
= tbd MHz; Vo= 45.3 dBmV at
m
−−−65 dB
547 MHz; note 3
2000 Apr 12 3
Loading...
+ 5 hidden pages