Philips BGD814 User Manual
DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
M3D252
BGD814
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Sep 07
2001 Nov 01
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
B
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
Hybrid amplifier module ina SOT115J package operating
with a voltage supply of 24 V (DC).
Side view
Fig.1 Simplified outline.
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 19.7 20.3 dB
f = 870 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 01 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 45 to 870 MHz; note 1 0.5 − 1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.25 dB
s
11
s
22
s
21
CTB composite triple beat 79 chs flat; V
X
mod
power gain f = 45 MHz 19.7 − 20.3 dB
f = 870 MHz 20.5 − 21.5 dB
f = 100 to 800 MHz −−±0.5 dB
f = 800 to 870 MHz −0.4 − 0.1 dB
input return losses f = 45 to 80 MHz 25 −−dB
f = 80 to 160 MHz 22 −−dB
f = 160 to 320 MHz 19 −−dB
f = 320 to 550 MHz 17 −−dB
f = 550 to 650 MHz 17 −−dB
f = 650 to 750 MHz 16 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 12 −−dB
output return losses f = 45 to 80 MHz 24 −−dB
f = 80 to 160 MHz 22 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 550 MHz 18 −−dB
f = 550 to 650 MHz 16 −−dB
f = 650 to 750 MHz 15 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 13 −−dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV; fm= 547.25 MHz −−−66 dB
o
112 chs flat; V
132 chs flat; V
112 chs;f
= 44 dBmV; fm= 745.25 MHz −−−60.5 dB
o
= 44 dBmV; fm= 859.25 MHz −−−56 dB
o
= 547.25 MHz;Vo= 50.2 dBmVat
m
−−−55.5 dB
745 MHz; note 2
79 chs; f
= 331.25 MHz; Vo= 47.3 dBmV at
m
−−−65 dB
547 MHz; note 3
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−66 dB
112 chs flat; V
132 chs flat; V
112 chs;f
= 44 dBmV; fm= 55.25 MHz −−−62.5 dB
o
= 44 dBmV; fm= 55.25 MHz −−−61 dB
o
= 745.25 MHz;Vo= 50.2 dBmVat
m
−−−57 dB
745 MHz; note 2
79 chs; f
= 445.25 MHz; Vo= 47.3 dBmV at
m
−−−66 dB
547 MHz; note 3
2001 Nov 01 3
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second
order distortion
d
2
V
o
second order distortion note 4 −−−69 dB
output voltage dim= −60 dB; note 5 64 −−dBmV
NF noise figure f = 50 MHz −−5.5 dB
I
tot
total current
consumption (DC)
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
= 44 dBmV; fm= 548.5 MHz −−−68 dB
o
= 44 dBmV; fm= 746.5 MHz −−−61 dB
o
= 44 dBmV; fm= 860.5 MHz −−−57 dB
o
= 210 MHz; Vo= 50.2 dBmV at
m
−−−56 dB
745 MHz; note 2
79 chs; f
= 210 MHz; Vo= 47.3 dBmV at
m
−−−64 dB
547 MHz; note 3
CTB compression = 1 dB; 132 chs flat;
48 −−dBmV
f = 859.25 MHz
CSO compression = 1 dB; 132 chs flat;
50 −−dBmV
f = 860.5 MHz
f = 550 MHz −−5.5 dB
f = 750 MHz −−6.5 dB
f = 870 MHz −−7.5 dB
note 6 380 395 410 mA
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+fq= 860.5 MHz.
5. Measured according to DIN45004B: fp= 851.25 MHz; Vp=Vo; fq= 858.25 MHz; Vq=Vo−6 dB; fr= 860.25 MHz;
Vr=Vo−6 dB; measured at fp+fq−fr= 849.25 MHz.
6. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 01 4
Loading...