Page 1
DISCRETE SEMICONDUCTORS
DATA SH EET
dbook, halfpage
M3D252
BGD814
860 MHz, 20 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Sep 07
2001 Nov 01
Page 2
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
B
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
handbook, halfpage
2
789
351
DESCRIPTION
Hybrid amplifier module ina SOT115J package operating
with a voltage supply of 24 V (DC).
Side view
Fig.1 Simplified outline.
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 19.7 20.3 dB
f = 870 MHz 20.5 21.5 dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 01 2
Page 3
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
CHARACTERISTICS
Bandwidth 40 to 870 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 45 to 870 MHz; note 1 0.5 − 1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.25 dB
s
11
s
22
s
21
CTB composite triple beat 79 chs flat; V
X
mod
power gain f = 45 MHz 19.7 − 20.3 dB
f = 870 MHz 20.5 − 21.5 dB
f = 100 to 800 MHz −−±0.5 dB
f = 800 to 870 MHz −0.4 − 0.1 dB
input return losses f = 45 to 80 MHz 25 −−dB
f = 80 to 160 MHz 22 −−dB
f = 160 to 320 MHz 19 −−dB
f = 320 to 550 MHz 17 −−dB
f = 550 to 650 MHz 17 −−dB
f = 650 to 750 MHz 16 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 12 −−dB
output return losses f = 45 to 80 MHz 24 −−dB
f = 80 to 160 MHz 22 −−dB
f = 160 to 320 MHz 17 −−dB
f = 320 to 550 MHz 18 −−dB
f = 550 to 650 MHz 16 −−dB
f = 650 to 750 MHz 15 −−dB
f = 750 to 870 MHz 15 −−dB
f = 870 to 914 MHz 13 −−dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV; fm= 547.25 MHz −−−66 dB
o
112 chs flat; V
132 chs flat; V
112 chs;f
= 44 dBmV; fm= 745.25 MHz −−−60.5 dB
o
= 44 dBmV; fm= 859.25 MHz −−−56 dB
o
= 547.25 MHz;Vo= 50.2 dBmVat
m
−−−55.5 dB
745 MHz; note 2
79 chs; f
= 331.25 MHz; Vo= 47.3 dBmV at
m
−−−65 dB
547 MHz; note 3
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−66 dB
112 chs flat; V
132 chs flat; V
112 chs;f
= 44 dBmV; fm= 55.25 MHz −−−62.5 dB
o
= 44 dBmV; fm= 55.25 MHz −−−61 dB
o
= 745.25 MHz;Vo= 50.2 dBmVat
m
−−−57 dB
745 MHz; note 2
79 chs; f
= 445.25 MHz; Vo= 47.3 dBmV at
m
−−−66 dB
547 MHz; note 3
2001 Nov 01 3
Page 4
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
CSO composite second
order distortion
d
2
V
o
second order distortion note 4 −−−69 dB
output voltage dim= −60 dB; note 5 64 −−dBmV
NF noise figure f = 50 MHz −−5.5 dB
I
tot
total current
consumption (DC)
79 chs flat; V
112 chs flat; V
132 chs flat; V
112 chs; f
= 44 dBmV; fm= 548.5 MHz −−−68 dB
o
= 44 dBmV; fm= 746.5 MHz −−−61 dB
o
= 44 dBmV; fm= 860.5 MHz −−−57 dB
o
= 210 MHz; Vo= 50.2 dBmV at
m
−−−56 dB
745 MHz; note 2
79 chs; f
= 210 MHz; Vo= 47.3 dBmV at
m
−−−64 dB
547 MHz; note 3
CTB compression = 1 dB; 132 chs flat;
48 −−dBmV
f = 859.25 MHz
CSO compression = 1 dB; 132 chs flat;
50 −−dBmV
f = 860.5 MHz
f = 550 MHz −−5.5 dB
f = 750 MHz −−6.5 dB
f = 870 MHz −−7.5 dB
note 6 380 395 410 mA
Notes
1. Slope straight line is defined as gain at 870 MHz against gain at 45 MHz.
2. Tilt = 10.2 dB (55 to 745 MHz).
3. Tilt = 7.3 dB (55 to 547 MHz).
4. fp= 55.25 MHz; Vp= 44 dBmV; fq= 805.25 MHz; Vq= 44 dBmV; measured at fp+fq= 860.5 MHz.
5. Measured according to DIN45004B: fp= 851.25 MHz; Vp=Vo; fq= 858.25 MHz; Vq=Vo−6 dB; fr= 860.25 MHz;
Vr=Vo−6 dB; measured at fp+fq−fr= 849.25 MHz.
6. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 35 V.
2001 Nov 01 4
Page 5
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
−50
handbook, halfpage
CTB
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MLD345
(1)
(2)
(3)
(4)
f (MHz)
Fig.2 Composite triple beat as a function of
frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−40
handbook, halfpage
X
mod
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MLD346
(1)
(2)
(3)
(4)
f (MHz)
Fig.3 Crossmodulationasafunctionoffrequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−60
handbook, halfpage
CSO
(dB)
−70
−80
−90
−100
ZS=ZL=75Ω; VB= 24 V; 79 chs; tilt = 7.3 dB (50 to 550 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MLD347
(1)
(2)
(3)
(4)
f (MHz)
Fig.4 Composite second order distortion as a
function of frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
2001 Nov 01 5
Page 6
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
−40
handbook, halfpage
CTB
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MLD348
(1)
(2)
(3)
(4)
f (MHz)
Fig.5 Composite triple beat as a function of
frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−40
handbook, halfpage
X
mod
(dB)
−50
−60
−70
−80
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MLD349
(1)
(2)
(3)
(4)
f (MHz)
Fig.6 Crossmodulationasafunctionoffrequency
under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
−50
handbook, halfpage
CSO
(dB)
−60
−70
−80
−90
ZS=ZL=75Ω; VB= 24 V; 112 chs; tilt = 10.3 dB (50 to 750 MHz).
(1) Vo.
(2) Typ. +3 σ.
200 1000
0
400 600 800
(3) Typ.
(4) Typ. −3 σ.
MLD350
(1)
(2)
(3)
(4)
f (MHz)
Fig.7 Composite second order distortion as a
function of frequency under tilted conditions.
52
V
o
(dBmV)
48
44
40
36
2001 Nov 01 6
Page 7
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
PACKAGE OUTLINE
Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;
2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads SOT115J
D
E
A
2
A
L
F
S
Z p
1
5
78923
c
d
U
Q
B
U
1
2
y M
p
q
B
0 5 10 mm
W
scale
e
e
1
b
q
2
q
1
y M
B
w
y M
M
B
DIMENSIONS (mm are the original dimensions)
A
UNIT
max.
max.
mm 20.8 9.1
OUTLINE
VERSION
SOT115J
A
2
c
bF
0.51
0.25 27.2 2.54 13.75 2.54 5.08 12.7 8.8
0.38
IEC JEDEC EIAJ
D
max.
d
max.
E
max.
ee
1
REFERENCES
L
min.
2001 Nov 01 7
Q
p
4.15
3.85
q
q1q
max.
2.4 38.1 25.4 10.2 4.2 44.75 8 0.25 0.1 3.8
2
U
1
S
max.
EUROPEAN
PROJECTION
W
U
2
6-32
UNC
yw
ISSUE DATE
99-02-06
Z
max.
Page 8
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
DATA SHEET STATUS
PRODUCT
DATA SHEET STATUS
Objective data Development This data sheet contains data from the objective specification for product
Preliminary data Qualification This data sheet contains data from the preliminary specification.
Product data Production This data sheet contains data from the product specification. Philips
(1)
STATUS
(2)
DEFINITIONS
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Changes will be
communicated according to the Customer Product/Process Change
Notification (CPCN) procedure SNW-SQ-650A.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
DEFINITIONS
Short-form specification The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Limiting values definition Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
attheseorat any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Application information Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
norepresentationorwarrantythatsuchapplicationswillbe
suitable for the specified use without further testing or
modification.
DISCLAIMERS
Life support applications These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury.Philips
Semiconductorscustomersusingorsellingtheseproducts
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Right to make changes Philips Semiconductors
reserves the right to make changes, without notice, in the
products, including circuits, standard cells, and/or
software, described or contained herein in order to
improve design and/or performance. Philips
Semiconductors assumes no responsibility or liability for
theuseofanyoftheseproducts,conveysnolicenceortitle
under any patent, copyright, or mask work right to these
products,andmakes no representations or warranties that
these products are free from patent, copyright, or mask
work right infringement, unless otherwise specified.
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A, and SNW-FQ-302B.
2001 Nov 01 8
Page 9
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
NOTES
2001 Nov 01 9
Page 10
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
NOTES
2001 Nov 01 10
Page 11
Philips Semiconductors Product specification
860 MHz, 20 dB gain power doubler amplifier BGD814
NOTES
2001 Nov 01 11
Page 12
Philips Semiconductors – a w orldwide compan y
Contact information
For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825
For sales offices addresses send e-mail to: sales.addresses@www.semiconductors.philips.com.
© Koninklijke Philips Electronics N.V. 2001
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands 613518/04/pp12 Date of release: 2001 Nov 01 Document order number: 9397 750 08857
SCA73
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