Philips BGD812 Datasheet

DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
BGD812
CATV amplifier module
Preliminary specification 1999 Nov 25
Philips Semiconductors Preliminary specification
CATV amplifier module BGD812
FEATURES
Excellent linearity
Extremely low noise
Excellent return loss properties
Silicon nitride passivation
Rugged construction
Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems operating in the 40 to 870 MHz frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
789
351
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.8 dB
f=870MHz 1920dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage 30 V RF input voltage 70 dBmV storage temperature −40 +100 °C operating mounting base temperature −20 +100 °C
1999 Nov 25 2
Philips Semiconductors Preliminary specification
CATV amplifier module BGD812
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.8 dB
SL slope straight line f = 45 to 870 MHz; note 1 0.4 0.9 1.4 dB FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
S
11
S
22
S
21
input return losses f = 45 to 80 MHz 23 −−dB
output return losses f = 45 to 80 MHz 23 −−dB
phase response f = 50 MHz −45 +45 deg
CTB composite triple beat 79 chs flat; V
X
mod
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−68 dB
=24V; Tmb=35°C; ZS=ZL=75
B
f = 870 MHz 19 20 dB
f = 100 to 800 MHz −−±0.5 dB f = 800 to 870 MHz −−±0.15 dB
f = 80 to 160 MHz 22 −−dB f = 160 to 320 MHz 20 −−dB f = 320 to 550 MHz 20 −−dB f = 550 to 650 MHz 19 −−dB f = 650 to 750 MHz 18 −−dB f = 750 to 870 MHz 18 −−dB f = 870 to 914 MHz 16 −−dB
f = 80 to 160 MHz 23 −−dB f = 160 to 320 MHz 20 −−dB f = 320 to 550 MHz 19 −−dB f = 550 to 650 MHz 18 −−dB f = 650 to 750 MHz 18 −−dB f = 750 to 870 MHz 17 −−dB f = 870 to 914 MHz 15 −−dB
=44dBmV; fm= 547.25 MHz −−−67 dB
o
112 chs flat; V 132 chs flat; V 112 chs; f
V
= 48.2 dBmV at 745 MHz; note 2
o
79 chs; f V
m
= 45.3 dBmV at 547 MHz; note 3
o
112 chs flat; V 132 chs flat; V 112 chs; f
V
= 48.2 dBmV at 745 MHz; note 2
o
79 chs; f V
m
= 45.3 dBmV at 547 MHz; note 3
o
=44dBmV; fm=745.25MHz −−−62 dB
o
=44dBmV; fm=859.25MHz −−−58 dB
o
=tbdMHz;
m
=tbdMHz;
= 44 dBmV; fm= 55.25 MHz −−−64 dB
o
= 44 dBmV; fm= 55.25 MHz −−−62 dB
o
=tbdMHz;
m
=tbdMHz;
−−tbd dB
−−tbd dB
−−tbd dB
−−tbd dB
1999 Nov 25 3
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