DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D252
BGD812
CATV amplifier module
Preliminary specification 1999 Nov 25
Philips Semiconductors Preliminary specification
CATV amplifier module BGD812
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 870 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
789
351
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.8 dB
f=870MHz 1920dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1999 Nov 25 2
Philips Semiconductors Preliminary specification
CATV amplifier module BGD812
CHARACTERISTICS
Bandwidth 40 to 870 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 − 18.8 dB
SL slope straight line f = 45 to 870 MHz; note 1 0.4 0.9 1.4 dB
FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
S
11
S
22
S
21
input return losses f = 45 to 80 MHz 23 −−dB
output return losses f = 45 to 80 MHz 23 −−dB
phase response f = 50 MHz −45 − +45 deg
CTB composite triple beat 79 chs flat; V
X
mod
cross modulation 79 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−68 dB
=24V; Tmb=35°C; ZS=ZL=75Ω
B
f = 870 MHz 19 − 20 dB
f = 100 to 800 MHz −−±0.5 dB
f = 800 to 870 MHz −−±0.15 dB
f = 80 to 160 MHz 22 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 19 −−dB
f = 650 to 750 MHz 18 −−dB
f = 750 to 870 MHz 18 −−dB
f = 870 to 914 MHz 16 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 19 −−dB
f = 550 to 650 MHz 18 −−dB
f = 650 to 750 MHz 18 −−dB
f = 750 to 870 MHz 17 −−dB
f = 870 to 914 MHz 15 −−dB
=44dBmV; fm= 547.25 MHz −−−67 dB
o
112 chs flat; V
132 chs flat; V
112 chs; f
V
= 48.2 dBmV at 745 MHz; note 2
o
79 chs; f
V
m
= 45.3 dBmV at 547 MHz; note 3
o
112 chs flat; V
132 chs flat; V
112 chs; f
V
= 48.2 dBmV at 745 MHz; note 2
o
79 chs; f
V
m
= 45.3 dBmV at 547 MHz; note 3
o
=44dBmV; fm=745.25MHz −−−62 dB
o
=44dBmV; fm=859.25MHz −−−58 dB
o
=tbdMHz;
m
=tbdMHz;
= 44 dBmV; fm= 55.25 MHz −−−64 dB
o
= 44 dBmV; fm= 55.25 MHz −−−62 dB
o
=tbdMHz;
m
=tbdMHz;
−−tbd dB
−−tbd dB
−−tbd dB
−−tbd dB
1999 Nov 25 3