DISCRETE SEMICONDUCTORS
DATA SH EET
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M3D252
BGD804
CATV amplifier module
Product specification
Supersedes data of 1997 Mar 25
1999 Mar 26
Philips Semiconductors Product specification
CATV amplifier module BGD804
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
APPLICATIONS
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
PIN CONFIGURATION
fpage
Side view
2
789
351
Fig.1 Simplified outline.
MSA319
CATV systems in the 40 to 860 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a
SOT115J package operating at a
voltage supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 19.5 20.5 dB
f = 860 MHz 20 − dB
I
tot
total current consumption (DC) VB=24V − 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
V
B
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
mounting base operating temperature −20 +100 °C
supply voltage − 25 V
1999 Mar 26 2
Philips Semiconductors Product specification
CATV amplifier module BGD804
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
=24V;T
B
=35°C; ZS=ZL=75Ω
case
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 19.5 20 20.5 dB
f = 860 MHz 20 21 − dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.1 2 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.2 ±0.5 dB
S
11
input return losses f = 40 to 80 MHz 20 28 − dB
f = 80 to 160 MHz 18.5 23 − dB
f = 160 to 320 MHz 17 20 − dB
f = 320 to 640 MHz 15.5 20 − dB
f = 640 to 860 MHz 14 20 − dB
S
22
output return losses f = 40 to 80 MHz 20 28.5 − dB
f = 80 to 160 MHz 18.5 28 − dB
f = 160 to 320 MHz 17 24 − dB
f = 320 to 640 MHz 15.5 19 − dB
f = 640 to 860 MHz 14 19 − dB
S
21
CTB composite triple beat 49 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 47 dBmV;
o
−−64 −61 dB
measured at 859.25 MHz
X
mod
cross modulation 49 channels flat; Vo= 47 dBmV;
−−65.5 −62 dB
measured at 55.25 MHz
CSO composite second order distortion 49 channels flat; V
= 47 dBmV;
o
−−63 −58 dB
measured at 860.5 MHz
d
2
V
o
second order distortion note 1 −−73 −67 dB
output voltage dim= −60 dB; note 2 +60 −61.5 − dBmV
F noise figure f = 50 MHz − 4.5 5 dB
f = 550 MHz −−6dB
f = 650 MHz −−6dB
f = 750 MHz −−6.5 dB
f = 860 MHz − 6.5 7.5 dB
I
tot
total current consumption (DC) note 3 − 395 410 mA
Notes
= 55.25 MHz; Vp= 44 dBmV;
1. f
p
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
2. Measured according to DIN45004B;
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1999 Mar 26 3
Philips Semiconductors Product specification
CATV amplifier module BGD804
Table 2 Bandwidth 40 to 860 MHz; VB=24V;T
=35°C; ZS=ZL=75Ω
case
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 19.5 20 20.5 dB
f = 860 MHz 20 21 − dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 1.1 2 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.2 ±0.5 dB
S
11
input return losses f = 40 to 80 MHz 20 28 − dB
f = 80 to 160 MHz 18.5 23 − dB
f = 160 to 320 MHz 17 20 − dB
f = 320 to 640 MHz 15.5 20 − dB
f = 640 to 860 MHz 14 20 − dB
S
22
output return losses f = 40 to 80 MHz 20 28.5 − dB
f = 80 to 160 MHz 18.5 28 − dB
f = 160 to 320 MHz 17 24 − dB
f = 320 to 640 MHz 15.5 19 − dB
f = 640 to 860 MHz 14 19 − dB
S
21
CTB composite triple beat 129 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−54 −53 dB
measured at 859.25 MHz
X
mod
cross modulation 129 channels flat; Vo= 44 dBmV;
−−62 −61 dB
measured at 55.25 MHz
CSO composite second order distortion 129 channels flat; V
= 44 dBmV;
o
−−60.5 −54 dB
measured at 860.5 MHz
d
2
V
o
second order distortion note 1 −−73 −67 dB
output voltage dim= −60 dB; note 2 +60 −61.5 − dBmV
F noise figure see Table 1 −−−dB
I
tot
total current consumption (DC) note 3 − 395 410 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
2. Measured according to DIN45004B;
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1999 Mar 26 4