Philips BGD802N Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD802N
CATV amplifier module
Product specification
Supersedes data of 1997 Sep 03
1999 Mar 22
Philips Semiconductors Product specification
CATV amplifier module BGD802N
FEATURES
• Extremely flat gain response
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 860 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module in a SOT115J package operating
at a supply voltage of 24 V (DC).
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 860 MHz 18.5 − dB
I
tot
total current consumption (DC) VB=24V − 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 25 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1999 Mar 22 2
Philips Semiconductors Product specification
CATV amplifier module BGD802N
CHARACTERISTICS
Table 1 Bandwidth 40 to 860 MHz; V
= 24 V; T
B
=35°C; ZS=ZL=75Ω
case
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 18 18.5 19 dB
f = 860 MHz 18.5 19.5 − dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 0.9 2 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.1 ±0.25 dB
S
11
input return losses f = 40 to 80 MHz 20 32 − dB
f = 80 to 160 MHz 18.5 27 − dB
f = 160 to 320 MHz 17 24 − dB
f = 320 to 640 MHz 15.5 22 − dB
f = 640 to 860 MHz 14 20.5 − dB
S
22
output return losses f = 40 to 80 MHz 20 33 − dB
f = 80 to 160 MHz 18.5 29 − dB
f = 160 to 860 MHz 17 22 − dB
S
21
CTB composite triple beat 49 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 47 dBmV;
o
−−65 −63 dB
measured at 859.25 MHz
X
mod
cross modulation 49 channels flat; Vo= 47 dBmV;
−−64 −62 dB
measured at 55.25 MHz
CSO composite second order
distortion
d
2
V
o
second order distortion note 1 −−75 −69 dB
output voltage dim= −60 dB; note 2 61.5 63.5 − dBmV
49 channels flat; V
= 47 dBmV;
o
measured at 860.5 MHz
−−68 −60 dB
F noise figure f = 50 MHz − 4.5 5.5 dB
f = 550 MHz −−6dB
f = 650 MHz −−7dB
f = 750 MHz −−7.5 dB
f = 860 MHz − 6.5 9 dB
I
tot
total current consumption (DC) note 3 − 395 410 mA
Notes
= 55.25 MHz; Vp= 44 dBmV;
1. f
p
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
2. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1999 Mar 22 3
Philips Semiconductors Product specification
CATV amplifier module BGD802N
Table 2 Bandwidth 40 to 860 MHz; VB= 24 V; T
=30°C; ZS=ZL=75Ω
case
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 18 18.5 19 dB
f = 860 MHz 18.5 19.5 − dB
SL slope cable equivalent f = 40 to 860 MHz 0.2 0.9 2 dB
FL flatness of frequency response f = 40 to 860 MHz −±0.1 ±0.25 dB
S
11
input return losses f = 40 to 80 MHz 20 32 − dB
f = 80 to 160 MHz 18.5 27 − dB
f = 160 to 320 MHz 17 24 − dB
f = 320 to 640 MHz 15.5 22 − dB
f = 640 to 860 MHz 14 20.5 − dB
S
22
output return losses f = 40 to 80 MHz 20 33 − dB
f = 80 to 160 MHz 18.5 29 − dB
f = 160 to 860 MHz 17 22 − dB
S
21
CTB composite triple beat 129 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−−54 dB
measured at 859.25 MHz
X
mod
cross modulation 129 channels flat; Vo= 44 dBmV;
−−−59 dB
measured at 55.25 MHz
CSO composite second order
distortion
d
2
V
o
second order distortion note 1 −−75 −69 dB
output voltage dim= −60 dB; note 2 61.5 63.5 − dBmV
129 channels flat; V
= 44 dBmV;
o
measured at 860.5 MHz
−−−56 dB
F noise figure see Table 1 −−−dB
I
tot
total current consumption (DC) note 3 − 395 410 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 805.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 860.5 MHz.
2. Measured according to DIN45004B:
fp= 851.25 MHz; Vp=Vo;
fq= 858.25 MHz; Vq=Vo−6 dB;
fr= 860.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 849.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1999 Mar 22 4
Loading...