DISCRETE SEMICONDUCTORS
DATA SHEET
ook, halfpage
M3D252
BGD714
CATV amplifier module
Preliminary specification 1999 Oct 22
Philips Semiconductors Preliminary specification
CATV amplifier module BGD714
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier modules in a SOT115J package operating
with a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
789
351
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 20 20.6 dB
f = 750 MHz 20.8 − dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1999 Oct 22 2
Philips Semiconductors Preliminary specification
CATV amplifier module BGD714
CHARACTERISTICS
Bandwidth 40 to 750 MHz; V
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 20 − 20.6 dB
SL slope straight line f = 45 to 750 MHz 0.5 − 1.5 dB
FL flatness straight line f = 45 to 750 MHz −−±0.5 dB
S
11
S
22
S
21
input return losses f = 40 to 80 MHz 23 −−dB
output return losses f = 40 to 80 MHz 23 −−dB
phase response f = 50 MHz −45 − +45 deg
CTB composite triple beat 112 chs flat; V
X
mod
cross modulation 112 chs flat; Vo= 44 dBmV; fm= 55.25 MHz −−−62 dB
CSO composite second
order distortion
d
2
V
o
second order distortion note 2 −−−70 dB
output voltage dim= −60 dB; note 3 62 −−dBmV
=24V; Tmb=35°C; ZS=ZL=75Ω
B
f = 750 MHz 20.8 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 21 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 21 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
=44dBmV; fm=745.25MHz −−−61 dB
o
79 chs flat; V
79 chs; f
V
= 49.3 dBmV at 547 MHz; note 1
o
79 chs flat; V
79 chs; f
= 49.3 dBmV at 547 MHz; note 1
V
o
112 chs flat; V
79 chs flat; V
79 chs; f
V
= 49.3 dBmV at 547 MHz; note 1
o
=44dBmV; fm= 547.25 MHz −−−68 dB
o
= 445.25 MHz;
m
=44dBmV; fm= 55.25 MHz −−−68 dB
o
= 745.25 MHz;
m
=44dBmV; fm=746.5MHz −−−63 dB
o
=44dBmV; fm= 548.5 MHz −−−68 dB
o
= 746.5 MHz;
m
−−−62 dB
−−−58 dB
−−−60 dB
1999 Oct 22 3