DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD712
750 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 29
2001 Nov 02
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD712
FEATURES
• Excellent linearity
• Extremely low noise
• Excellent return loss properties
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
PINNING - SOT115J
PIN DESCRIPTION
1 input
2, 3 common
5+V
7, 8 common
9 output
B
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
handbook, halfpage
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DESCRIPTION
Side view
MSA319
Hybrid amplifier module ina SOT115J package operating
with a voltage supply of 24 V (DC).
Fig.1 Simplified outline.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 45 MHz 18.2 18.8 dB
f = 750 MHz 19 20 dB
I
tot
total current consumption (DC) VB= 24 V 380 410 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 30 V
RF input voltage − 70 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 02 2
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD712
CHARACTERISTICS
Bandwidth 40 to 750 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope straight line f = 45 to 750 MHz; note 1 0.5 1 1.5 dB
FL flatness straight line f = 45 to 100 MHz −−±0.35 dB
S
11
S
22
S
21
CTB composite triple beat 112 channels flat; V
X
mod
power gain f = 45 MHz 18.2 18.5 18.8 dB
f = 750 MHz 19 19.5 20 dB
f = 100 to 700 MHz −−±0.5 dB
f = 700 to 750 MHz −−±0.15 dB
input return losses f = 45 to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 21 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 20 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
output return losses f = 45 to 80 MHz 23 −−dB
f = 80 to 160 MHz 23 −−dB
f = 160 to 320 MHz 20 −−dB
f = 320 to 550 MHz 20 −−dB
f = 550 to 650 MHz 19 −−dB
f = 650 to 750 MHz 19 −−dB
f = 750 to 790 MHz 17 −−dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−−62 dB
fm= 745.25 MHz
79 channels flat; V
= 44 dBmV;
o
−−−68 dB
fm= 547.25 MHz
79 channels; f
= 445.25 MHz;
m
−−−63 dB
Vo= 49.3 dBmVat 547 MHz; note 2
cross modulation 112 channels flat; Vo= 44 dBmV;
−−−63 dB
fm= 55.25 MHz
79 channels flat; V
= 44 dBmV;
o
−−−69 dB
fm= 55.25 MHz
79 channels; f
= 745.25 MHz;
m
−−−60 dB
Vo= 49.3 dBmVat 547 MHz; note 2
2001 Nov 02 3