Philips BGD702N Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD702N
750 MHz, 18.5 dB gain power
doubler amplifier
Product specification
Supersedes data of 2001 Oct 25
2001 Nov 02
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD702N
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
• CATV systems operating in the 40 to 750 MHz
frequency range.
DESCRIPTION
Hybrid amplifier module ina SOT115J package operating
at a voltage supply of 24 V (DC).
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
7 common
8 common
9 output
handbook, halfpage
Side view
Fig.1 Simplified outline.
B
2
351
789
MSA319
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 750 MHz 18.5 − dB
I
tot
total current consumption (DC) VB=24V − 435 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
2001 Nov 02 2
Philips Semiconductors Product specification
750 MHz, 18.5 dB gain power doubler amplifier BGD702N
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 750 MHz 0.2 2 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.25 dB
S
11
S
22
S
21
CTB composite triple beat 110 channels flat; V
X
mod
CSO composite second order
d
2
V
o
F noise figure f = 50 MHz − 5.5 dB
I
tot
power gain f = 50 MHz 18 19 dB
f = 750 MHz 18.5 − dB
input return losses f = 40 to 80 MHz 20 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 320 MHz 18 − dB
f = 320 to 640 MHz 17 − dB
f = 640 to 750 MHz 16 − dB
output return losses f = 40 to 80 MHz 20 − dB
f = 80 to 160 MHz 19 − dB
f = 160 to 320 MHz 18 − dB
f = 320 to 640 MHz 17 − dB
f = 640 to 750 MHz 16 − dB
phase response f = 50 MHz −45 +45 deg
= 44 dBmV;
o
−−58 dB
measured at 745.25 MHz
cross modulation 110 channels flat; Vo= 44 dBmV;
−−62 dB
measured at 55.25 MHz
distortion
110 channels flat; V
measured at 746.5 MHz
= 44 dBmV;
o
−−58 dB
second order distortion note 1 −−68 dB
output voltage dim= −60 dB; note 2 61 − dBmV
f = 450 MHz − 6.5 dB
f = 550 MHz − 6.5 dB
f = 600 MHz − 7dB
f = 750 MHz − 8.5 dB
total current consumption (DC) note 3 − 435 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
2. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
2001 Nov 02 3
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