DISCRETE SEMICONDUCTORS
DATA SH EET
BGD702D
CATV amplifier module
Product specification
Supersedes data of June 1995
File under Discrete Semiconductors, SC16
1997 Mar 25
Philips Semiconductors Product specification
CATV amplifier module BGD702D
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures excellent reliability.
APPLICATIONS
CATV systems in the 40 to 750 MHz frequency range.
DESCRIPTION
Hybrid high dynamic range cascode amplifier module with
darlington pre-stage dies operating at a voltage supply of
24 V (DC).
QUICK REFERENCE DATA
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
handbook, halfpage
123 5 789
Side view
Fig.1 Simplified outline.
MSA319 - 1
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 750 MHz 20 − dB
I
tot
total current consumption (DC) VB= 24 V 400 435 mA
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
B
V
i
T
stg
T
mb
supply voltage − 25 V
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1997 Mar 25 2
Philips Semiconductors Product specification
CATV amplifier module BGD702D
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; V
= 24 V; T
B
=35°C; ZS=ZL=75Ω
case
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 750 MHz 20 − dB
SL slope cable equivalent f = 40 to 750 MHz 2 4 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.5 dB
S
11
input return losses f = 40 to 80 MHz 20 − dB
f = 80 to 160 MHz 18.5 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 640 MHz 15.5 − dB
f = 640 to 750 MHz 14 − dB
S
22
output return losses f = 40 to 80 MHz 20 − dB
f = 80 to 160 MHz 18.5 − dB
f = 160 to 320 MHz 17 − dB
f = 320 to 640 MHz 15.5 − dB
f = 640 to 750 MHz 14 − dB
S
21
CTB composite triple beat 110 channels flat; V
phase response f = 50 MHz −45 +45 deg
= 44 dBmV;
o
−−62 dB
measured at 745.25 MHz
X
mod
cross modulation 110 channels flat; Vo= 44 dBmV;
−−59 dB
measured at 55.25 MHz
CSO composite second order distortion 110 channels flat; V
= 44 dBmV;
o
−−62 dB
measured at 746.5 MHz
d
2
V
o
second order distortion note 1 −−72 dB
output voltage dim= −60 dB; note 2 64 − dBmV
F noise figure f = 50 MHz − 5.5 dB
f = 750 MHz − 7dB
I
tot
total current consumption (DC) note 3 400 435 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
2. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
3. The module normally operates at VB= 24 V, but is able to withstand supply transients up to 30 V.
1997 Mar 25 3