DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D252
BGD702; BGD702MI
CATV amplifier modules
Product specification
Supersedes data of 1998 Mar 13
1999 Mar 22
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
DESCRIPTION
Hybrid amplifier modules designed
for CATV systems operating over a
PINNING - SOT115J
DESCRIPTION
PIN
BGD702 BGD702MI
1 input output
2 common common
3 common common
5+V
B
7 common common
8 common common
9 output input
+V
alfpage
2
B
Side view
789
351
Fig.1 Simplified outline.
frequency range of 40 to 750 MHz at
a voltage supply of 24 V (DC). Both
modules are electrically identical,
only the pinning is different.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 750 MHz 18.5 − dB
I
tot
total current consumption (DC) VB=24V − 435 mA
MSA319
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
1999 Mar 22 2
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
CHARACTERISTICS
Table 1 Bandwidth 40 to 750 MHz; V
= 24 V; Tmb=35°C; ZS=ZL=75Ω
B
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
power gain f = 50 MHz 18 18.5 19 dB
f = 750 MHz 18.5 19.7 − dB
SL slope cable equivalent f = 40 to 750 MHz 0.2 1.3 2 dB
FL flatness of frequency response f = 40 to 750 MHz −±0.2 ±0.5 dB
S
11
input return losses f = 40 to 80 MHz 20 27 − dB
f = 80 to 160 MHz 19 30 − dB
f = 160 to 320 MHz 18 29 − dB
f = 320 to 640 MHz 17 22 − dB
f = 640 to 750 MHz 16 21 − dB
S
22
output return losses f = 40 to 80 MHz 20 23 − dB
f = 80 to 160 MHz 19 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 640 MHz 17 21 − dB
f = 640 to 750 MHz 16 21 − dB
S
21
CTB composite triple beat 110 channels flat; V
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−59 −58 dB
measured at 745.25 MHz
X
mod
cross modulation 110 channels flat; Vo= 44 dBmV;
−−64 −62 dB
measured at 55.25 MHz
CSO composite second order distortion 110 channels flat; V
= 44 dBmV;
o
−−63 −58 dB
measured at 746.5 MHz
d
2
V
o
second order distortion note 1 −−78 −68 dB
output voltage dim= −60 dB; note 2 61 64 − dBmV
F noise figure f = 50 MHz − 4.5 5.5 dB
f = 450 MHz −−6.5 dB
f = 550 MHz −−6.5 dB
f = 600 MHz −−7dB
f = 750 MHz − 6.5 8.5 dB
I
tot
total current consumption (DC) note 3 − 425 435 mA
Notes
= 55.25 MHz; Vp= 44 dBmV;
1. f
p
fq= 691.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 746.5 MHz.
2. Measured according to DIN45004B:
fp= 740.25 MHz; Vp=Vo;
fq= 747.25 MHz; Vq=Vo−6 dB;
fr= 749.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 738.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1999 Mar 22 3
Philips Semiconductors Product specification
CATV amplifier modules BGD702; BGD702MI
Table 2 Bandwidth 40 to 600 MHz; VB= 24 V; Tmb=35°C; ZS=ZL=75Ω
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
G
p
SL slope cable equivalent f = 40 to 600 MHz 0.2 − 2dB
FL flatness of frequency response f = 40 to 600 MHz −−±0.3 dB
S
11
S
22
S
21
CTB composite triple beat 85 channels flat; V
X
mod
CSO composite second order distortion 85 channels flat; V
d
2
V
o
F noise figure see Table 1 −−−dB
I
tot
power gain f = 50 MHz 18 18.5 19 dB
f = 600 MHz 18.5 19.4 − dB
input return losses f = 40 to 80 MHz 20 27 − dB
f = 80 to 160 MHz 19 30 − dB
f = 160 to 320 MHz 18 29 − dB
f = 320 to 600 MHz 17 22 − dB
output return losses f = 40 to 80 MHz 20 23 − dB
f = 80 to 160 MHz 19 24 − dB
f = 160 to 320 MHz 18 23 − dB
f = 320 to 600 MHz 17 21 − dB
phase response f = 50 MHz −45 − +45 deg
= 44 dBmV;
o
−−66 −65 dB
measured at 595.25 MHz
cross modulation 85 channels flat; Vo= 44 dBmV;
−−66 −65 dB
measured at 55.25 MHz
= 44 dBmV;
o
−−68 −60 dB
measured at 596.5 MHz
second order distortion note 1 −−80 −70 dB
output voltage dim= −60 dB; note 2 64 67 − dBmV
total current consumption (DC) note 3 − 425 435 mA
Notes
1. f
= 55.25 MHz; Vp= 44 dBmV;
p
fq= 541.25 MHz; Vq= 44 dBmV;
measured at fp+fq= 596.5 MHz.
2. Measured according to DIN45004B:
fp= 590.25 MHz; Vp=Vo;
fq= 597.25 MHz; Vq=Vo−6 dB;
fr= 599.25 MHz; Vr=Vo−6 dB;
measured at fp+fq−fr= 588.25 MHz.
3. The modules normally operate at VB= 24 V, but are able to withstand supply transients up to 30 V.
1999 Mar 22 4