DISCRETE SEMICONDUCTORS
DATA SH EET
BGD602
CATV amplifier module
Product specification
File under Discrete Semiconductors, SC16
Philips Semiconductors
February 1994
Philips Semiconductors Product specification
CATV amplifier module BGD602
FEATURES
• Excellent linearity
• Extremely low noise
• Silicon nitride passivation
• Rugged construction
• Gold metallization ensures
excellent reliability.
DESCRIPTION
PINNING - SOT115J
PIN DESCRIPTION
1 input
2 common
3 common
5+V
B
7 common
8 common
9 output
page
2
351
Side view
Fig.1 Simplified outline.
Hybrid high dynamic range amplifier
module designed for applications in
CATV systems with a bandwidth of
40 to 600 MHz operating with a
voltage supply of 24 V (DC).
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
G
p
power gain f = 50 MHz 18 19 dB
f = 600 MHz 19 − dB
I
tot
total current consumption (DC) VB = 24 V − 435 mA
789
MSA319
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER MIN. MAX. UNIT
V
i
T
stg
T
mb
RF input voltage − 65 dBmV
storage temperature −40 +100 °C
operating mounting base temperature −20 +100 °C
February 1994 2