Philips BGA2717 Technical data

1. Product profile

1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal

matching circuit in a 6-pin SOT363 SMD plastic package.

1.2 Features

■ Internally matched to 50 Ω

■ Wide frequency range (3.2 GHz at 3 dB bandwidth)

■ Flat 24 dB gain (±1 dB up to 2.8 GHz)

■ −2.5 dBm output power at 1 dB compression point

■ Good linearity for low current (IP3

out

= 10 dBm)

■ Low second harmonic; −38 dBc at P

D

= −40 dBm

■ Low noise figure; 2.3 dB at 1 GHz

■ Unconditionally stable (K ≥ 2).

1.3 Applications

■ LNB IF amplifiers

■ Cable systems

■ ISM

■ General purpose.

1.4 Quick reference data

BGA2717

MMIC wideband amplifier

Rev. 02 — 24 September 2004 Product data sheet

CAUTION

This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken

during transport and handling.

MSC895

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

S

DC supply voltage - 5 6 V

I

S

supply current - 8 - mA

s

21



2

insertion power gain f = 1 GHz - 24 - dB

NF noise figure f = 1 GHz - 2.3 - dB

P

L(sat)

saturated load power f = 1 GHz - 1 - dBm

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9397 750 13293 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 2 of 14

Philips Semiconductors

BGA2717

MMIC wideband amplifier

2. Pinning information

3. Ordering information

4. Marking

5. Limiting values

Table 2: Pinning

Pin Description Simplified outline Symbol

1V

S

2, 5 GND2

3 RF_OUT

4 GND1

6 RF_IN

SOT363

132

4

56

sym052

1

3

2, 5

6

4

Table 3: Ordering information

Type number Package

Name Description Version

BGA2717 - plastic surface mounted package; 6 leads SOT363

Table 4: Marking

Type number Marking code

BGA2717 1B-

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

S

DC supply voltage RF input AC

coupled

-6V

I

S

supply current - 15 mA

P

tot

total power dissipation T

sp

≤ 90 °C - 200 mW

T

stg

storage temperature −65 +150 °C

T

j

junction temperature - 150 °C

P

D

maximum drive power - −10 dBm

9397 750 13293 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 3 of 14

Philips Semiconductors

BGA2717

MMIC wideband amplifier

6. Thermal characteristics

7. Characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction

to solder point

P

tot

= 200 mW;

T

sp

≤ 90 °C

300 K/W

Table 7: Characteristics

V

S

= 5 V; I

S

= 8 mA; T

j

= 25

°

C; measured on demo board; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

I

S

supply current 6 8 10 mA

s

21



2

insertion power

gain

f = 100 MHz 18 18.6 20 dB

f = 1 GHz 23 23.9 25 dB

f = 1.8 GHz 24 25 27 dB

f = 2.2 GHz 24 25.1 27 dB

f = 2.6 GHz 22 24 26 dB

f = 3 GHz 20 22.1 24 dB

s

11



2

input return

losses

f = 1 GHz 15 19 - dB

f = 2.2 GHz 8 9.4 - dB

s

22



2

output return

losses

f = 1 GHz 8 10 - dB

f = 2.2 GHz 5 6.8 - dB

s

12



2

isolation f = 1.6 GHz 54 55 - dB

f = 2.2 GHz 38 39 - dB

NF noise figure f = 1 GHz - 2.3 2.5 dB

f = 2.2 GHz - 2.9 3.1 dB

B bandwidth at s21

2

−3 dB below flat

gain at 1 GHz

3 3.2 - GHz

K stability factor f = 1 GHz - 13 -

f = 2.2 GHz - 1.7 -

P

L(sat)

saturated load

power

f = 1 GHz 0 1.4 - dBm

f = 2.2 GHz −1 +0.1 - dBm

P

L(1dB)

load power at 1 dB gain compression;

f = 1 GHz

−4 −2.6 - dBm

at 1 dB gain compression;

f = 2.2 GHz

−5 −3.1 - dBm

IM2 second order

intermodulation

product

at P

D

= −40 dBm;

f

0

= 1 GHz

36 38 - dBc

IP3

in

input, third

order intercept

point

f = 1 GHz −15 −13.9 - dBm

f = 2.2 GHz −20 −18.8 - dBm

IP3

out

output, third

order intercept

point

f = 1 GHz 9 10 - dBm

f = 2.2 GHz 4 6.3 - dBm

9397 750 13293 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 4 of 14

Philips Semiconductors

BGA2717

MMIC wideband amplifier

8. Application information

Figure 1 shows a typical application circuit for the BGA2717 MMIC. The device is

internally matchedto 50 Ω, and thereforedoes not need any external matching. The value

of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF

for applications above 100 MHz. However, when the device is operated below 100 MHz,

the capacitor value should be increased.

The 22 nF supply decoupling capacitor C1 should be located as close as possible to the

MMIC.

The printed-circuit board (PCB) topground plane, connectedto pins 2, 4 and 5 must beas

close as possible to the MMIC, and ideally directly beneath it. When using via holes, use

multiple via holes, located as close as possible to the MMIC.

Figure 2 shows the PCB layout, used for the standard demonstration board.

Fig 1. Typical application circuit.

mgu435

RF_OUTRF_IN

C1

C2 C3

GND2GND1

V

S

V

S

RF input RF output

1

3

2, 5

6

4

9397 750 13293 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 5 of 14

Philips Semiconductors

BGA2717

MMIC wideband amplifier

8.1 Grounding and output impedance

If the grounding is not optimal, the gain becomes less flat and the 50 Ω output matching

becomes worse. If a better output matching to 50 Ω is required, a 12 Ω resistor (R1) can

be placed in series with C3 (see Figure 3). This will significantly improve the output

impedance, at the cost of 1 dB gain and 1 dB output power.

Material = FR4; thickness = 0.6 mm, ε

r

= 4.6.

Fig 2. PCB layout and demonstration board showing components.

001aab255

OUTIN

PH

V+

PHILIPS

OUTIN

PH

V+

PHILIPS

C3

C2

C1

DUT

30 mm

30 mm