Philips BGA2716 Technical data

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BGA2716

MMIC wideband amplifier

Rev. 02 — 24 September 2004 Product data sheet

1. Product profile

1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.

CAUTION

MSC895

This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.

1.2 Features

■ Internally matched to 50 Ω

■ Wide frequency range (3.2 GHz at 3 dB bandwidth)

■ Flat 23 dB gain (±1 dB up to 2.7 GHz)

■ 9 dBm output power at 1 dB compression point

■ Good linearity for low current (IP3

= 22 dBm)

out

■ Low second harmonic; −38 dBc at PL = −5 dBm

■ Unconditionally stable (K ≥ 1.2).

1.3 Applications

■ LNB IF amplifiers

■ Cable systems

■ ISM

■ General purpose.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

V

S

I

S

2



s

21

NF noise figure f = 1 GHz - 5.3 - dB
P

L(sat)

DC supply voltage - 5 6 V
supply current - 15.9 - mA
insertion power gain f = 1 GHz - 22.9 - dB

saturated load power f = 1 GHz - 11.6 - dBm

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simplified outline Symbol

1V
2, 5 GND2
3 RF_OUT
4 GND1
6 RF_IN

3. Ordering information

Table 3: Ordering information

Type number Package

BGA2716 - plastic surface mounted package; 6 leads SOT363

BGA2716

MMIC wideband amplifier

S

132

56

SOT363

4

Name Description Version

1

6

4

3

2, 5

sym052

4. Marking

Table 4: Marking

Type number Marking code

BGA2716 B7-

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

V

S

I

S

P

tot

T

stg

T

j

P

D

DC supply voltage RF input AC

-6V

coupled
supply current - 30 mA
total power dissipation Tsp≤ 90 °C - 200 mW
storage temperature −65 +150 °C
junction temperature - 150 °C
maximum drive power - −10 dBm

9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 2 of 14

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6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

R

th(j-sp)

thermal resistance from junction
to solder point

7. Characteristics

Table 7: Characteristics

VS=5V; IS= 15.9 mA; Tj=25°C; measured on demo board; unless otherwise specified.

Symbol Parameter Conditions Min Typ Max Unit

I

S

s

21

s

11

s

22

s

12

NF noise figure f = 1 GHz - 5.3 5.4 dB

B bandwidth at s

K stability factor f = 1 GHz - 1.4 -

P

L(sat)

P

L(1dB)

IM2 second order

IP3

in

IP3

out

supply current 13 15.9 21 mA

2



insertion power
gain

2



input return
losses

2



output return
losses

2



isolation f = 1.6 GHz 30 31 - dB

saturated load
power

load power at 1 dB gain compression;

intermodulation
product

input, third
order intercept
point

output, third
order intercept
point

BGA2716

MMIC wideband amplifier

P

= 200 mW;

tot

T

≤ 90 °C

sp

f = 100 MHz 21 22.1 23 dB
f = 1 GHz 22 22.9 24 dB
f = 1.8 GHz 22 23.1 25 dB
f = 2.2 GHz 21 22.8 24 dB
f = 2.6 GHz 20 22.1 24 dB
f = 3 GHz 19 20.8 22 dB
f = 1 GHz 15 17 - dB
f = 2.2 GHz 10 12 - dB
f = 1 GHz 10 12 - dB
f = 2.2 GHz 9 11 - dB

f = 2.2 GHz 33 35 - dB

f = 2.2 GHz - 5.5 5.6 dB

2−3 dB below flat

21

3 3.2 - GHz

gain at 1 GHz

f = 2.2 GHz - 1.9 ­f = 1 GHz 10 11.6 - dBm
f = 2.2 GHz 6 7.5 - dBm

8 8.9 - dBm

f = 1 GHz
at 1 dB gain compression;

5 6.1 - dBm

f = 2.2 GHz

= −5 dBm;

at P

L

f

= 1 GHz

0

36 38 - dBc

f = 1 GHz −2 −0.7 - dBm
f = 2.2 GHz −8 −6.9 - dBm

f = 1 GHz 21 22.2 - dBm
f = 2.2 GHz 15 15.9 - dBm

300 K/W

9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 3 of 14

Philips Semiconductors

8. Application information

Figure 1 shows a typical application circuit for the BGA2716 MMIC. The device is

internally matchedto 50 Ω, and thereforedoes not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.

The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this
value should be increased. At frequencies above 1 GHz, a lower value can be used to
tune the output return loss. For optimal results, a good quality chip inductor or a
wire-wound SMD type should be chosen.

Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as
close as possible to the MMIC.

The printed-circuit board (PCB) topground plane, connectedto pins 2, 4 and 5 must beas
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.

BGA2716

MMIC wideband amplifier

V

S

RF input RF output

Fig 1. Typical application circuit.

C1

V

S

C2 C3

RF_IN

RF_OUT

GND2GND1

L1

mgu436

Figure 2 shows the PCB layout, used for the standard demonstration board.

9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 4 of 14

Philips Semiconductors

BGA2716

MMIC wideband amplifier

30 mm

30 mm

PH

PH

C2

DUT

C1

PHILIPS

OUTIN

V+

PHILIPS

C3

L1

OUTIN

V+

001aab256

Material = FR4; thickness = 0.6 mm, εr = 4.6.

Fig 2. PCB layout and demonstration board showing components.

8.1 Application examples

The excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifier such as LNBs (see Figure 3).

9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.

Product data sheet Rev. 02 — 24 September 2004 5 of 14