Datasheet BGA2716 Datasheet (Philips)

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BGA2716

MMIC wideband ampliﬁer

Rev. 02 — 24 September 2004 Product data sheet

1. Product proﬁle

1.1 General description

Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband ampliﬁer with internal matching circuit in a 6-pin SOT363 SMD plastic package.

CAUTION

MSC895

This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken during transport and handling.

1.2 Features

■ Internally matched to 50 Ω

■ Wide frequency range (3.2 GHz at 3 dB bandwidth)

■ Flat 23 dB gain (±1 dB up to 2.7 GHz)

■ 9 dBm output power at 1 dB compression point

■ Good linearity for low current (IP3

= 22 dBm)

out

■ Low second harmonic; −38 dBc at PL = −5 dBm

■ Unconditionally stable (K ≥ 1.2).

1.3 Applications

■ LNB IF ampliﬁers

■ Cable systems

■ ISM

■ General purpose.

1.4 Quick reference data

Table 1: Quick reference data

Symbol Parameter Conditions Min Typ Max Unit



s

NF noise ﬁgure f = 1 GHz - 5.3 - dB P

L(sat)

DC supply voltage - 5 6 V supply current - 15.9 - mA insertion power gain f = 1 GHz - 22.9 - dB

saturated load power f = 1 GHz - 11.6 - dBm

Philips Semiconductors

2. Pinning information

Table 2: Pinning

Pin Description Simpliﬁed outline Symbol

1V 2, 5 GND2 3 RF_OUT 4 GND1 6 RF_IN

3. Ordering information

Table 3: Ordering information

Type number Package

BGA2716 - plastic surface mounted package; 6 leads SOT363

BGA2716

MMIC wideband ampliﬁer

132

SOT363

Name Description Version

2, 5

sym052

4. Marking

Table 4: Marking

Type number Marking code

BGA2716 B7-

5. Limiting values

Table 5: Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

tot

stg

DC supply voltage RF input AC

-6V

coupled supply current - 30 mA total power dissipation Tsp≤ 90 °C - 200 mW storage temperature −65 +150 °C junction temperature - 150 °C maximum drive power - −10 dBm

Product data sheet Rev. 02 — 24 September 2004 2 of 14

Philips Semiconductors

6. Thermal characteristics

Table 6: Thermal characteristics

Symbol Parameter Conditions Typ Unit

th(j-sp)

thermal resistance from junction to solder point

7. Characteristics

Table 7: Characteristics

VS=5V; IS= 15.9 mA; Tj=25°C; measured on demo board; unless otherwise speciﬁed.

Symbol Parameter Conditions Min Typ Max Unit

s

NF noise ﬁgure f = 1 GHz - 5.3 5.4 dB

B bandwidth at s

K stability factor f = 1 GHz - 1.4 -

L(sat)

L(1dB)

IM2 second order

IP3

out

supply current 13 15.9 21 mA



insertion power gain



input return losses



output return losses



isolation f = 1.6 GHz 30 31 - dB

saturated load power

load power at 1 dB gain compression;

intermodulation product

input, third order intercept point

output, third order intercept point

BGA2716

MMIC wideband ampliﬁer

= 200 mW;

tot

≤ 90 °C

f = 100 MHz 21 22.1 23 dB f = 1 GHz 22 22.9 24 dB f = 1.8 GHz 22 23.1 25 dB f = 2.2 GHz 21 22.8 24 dB f = 2.6 GHz 20 22.1 24 dB f = 3 GHz 19 20.8 22 dB f = 1 GHz 15 17 - dB f = 2.2 GHz 10 12 - dB f = 1 GHz 10 12 - dB f = 2.2 GHz 9 11 - dB

f = 2.2 GHz 33 35 - dB

f = 2.2 GHz - 5.5 5.6 dB

2−3 dB below ﬂat

3 3.2 - GHz

gain at 1 GHz

f = 2.2 GHz - 1.9 f = 1 GHz 10 11.6 - dBm f = 2.2 GHz 6 7.5 - dBm

8 8.9 - dBm

f = 1 GHz at 1 dB gain compression;

5 6.1 - dBm

f = 2.2 GHz

= −5 dBm;

at P

= 1 GHz

36 38 - dBc

f = 1 GHz −2 −0.7 - dBm f = 2.2 GHz −8 −6.9 - dBm

f = 1 GHz 21 22.2 - dBm f = 2.2 GHz 15 15.9 - dBm

300 K/W

Product data sheet Rev. 02 — 24 September 2004 3 of 14

Philips Semiconductors

8. Application information

Figure 1 shows a typical application circuit for the BGA2716 MMIC. The device is

internally matchedto 50 Ω, and thereforedoes not need any external matching. The value of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF for applications above 100 MHz. However, when the device is operated below 100 MHz, the capacitor value should be increased.

The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this value should be increased. At frequencies above 1 GHz, a lower value can be used to tune the output return loss. For optimal results, a good quality chip inductor or a wire-wound SMD type should be chosen.

Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as close as possible to the MMIC.

The printed-circuit board (PCB) topground plane, connectedto pins 2, 4 and 5 must beas close as possible to the MMIC, and ideally directly beneath it. When using via holes, use multiple via holes, located as close as possible to the MMIC.

BGA2716

MMIC wideband ampliﬁer

RF input RF output

Fig 1. Typical application circuit.

C2 C3

RF_IN

RF_OUT

GND2GND1

mgu436

Figure 2 shows the PCB layout, used for the standard demonstration board.

Product data sheet Rev. 02 — 24 September 2004 4 of 14

Philips Semiconductors

BGA2716

MMIC wideband ampliﬁer

30 mm

DUT

PHILIPS

OUTIN

V+

PHILIPS

OUTIN

V+

001aab256

Material = FR4; thickness = 0.6 mm, εr = 4.6.

Fig 2. PCB layout and demonstration board showing components.

8.1 Application examples

The excellent wideband characteristics of the MMIC make it an ideal building block in IF ampliﬁer such as LNBs (see Figure 3).

Product data sheet Rev. 02 — 24 September 2004 5 of 14

Philips Semiconductors

As second ampliﬁer after an LNA, the MMIC offers an easy matching, low noise solution (see Figure 4).

As driver ampliﬁer in the TX path, the good linear performance and matched input/output offer quick design solutions (see Figure 5).

Fig 3. Application as IF ampliﬁer.

from RF circuit

antenna

oscillator

LNA

mixer

wideband

amplifier

wideband

amplifier

mixer

to IF circuit or demodulator

oscillator

BGA2716

MMIC wideband ampliﬁer

mgu438

mgu439

Fig 4. Application as RF ampliﬁer.

from modulation

or IF circuit

oscillator

Fig 5. Application as driver ampliﬁer.

mixer

to power amplifier

wideband

amplifier

mgu440

Product data sheet Rev. 02 — 24 September 2004 6 of 14

Philips Semiconductors

BGA2716

MMIC wideband ampliﬁer

90° +1

+0.5

180°

+0.2

−0.2

−0.5

100 MHz

0.50.2

4 GHz

−1

−90°

IS = 15.9 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω.

Fig 6. Input reﬂection coefﬁcient (s11); typical values.

90° +1

+0.5

100 MHz

+0.2

180°

4 GHz

0.50.2

1.0

45°135°

−2

−5

−45°−135°

001aab257

45°135°

0.8

0.6

0.4

0.2

0°

1.0

0.8

0.6

0.4

0.2

0°

−2

−5

−45°−135°

1.0

001aab258

−0.2

−0.5

−1

−90°

IS = 15.9 mA; VS = 5 V; PD = −35 dBm; Zo = 50 Ω.

Fig 7. Output reﬂection coefﬁcient (s22); typical values.

Product data sheet Rev. 02 — 24 September 2004 7 of 14

Philips Semiconductors

BGA2716

MMIC wideband ampliﬁer

(dB)

−20

−40

−60

0 400030001000 2000

001aab259

f (MHz)

IS = 15.9 mA; VS = 5 V; PD= −35 dBm; Zo = 50 Ω.P

Fig 8. Isolation (s122) as a function of frequency;

typical values.

001aab261

(1) (2) (3)

(dBm)

(dB)

0 400030001000 2000

= −35 dBm; Zo = 50 Ω.

001aab260

(2)

(1)

(3)

f (MHz)

(1) IS = 19.5 mA; VS = 5.5 V. (2) IS = 15.9 mA; VS = 5 V. (3) IS = 12.4 mA; VS = 4.5 V.

Fig 9. Insertion gain (s212) as a function of

frequency; typical values.

001aab262

(1) (2) (3)

(dBm)

−10

−20

−40 0−10−30 −20

PD (dBm)

f = 1 GHz; Zo = 50 Ω. (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V.

Fig 10. Load power as a function of drive power at

1 GHz; typical values.

−10

−20

−40 0−10−30 −20

PD (dBm)

f = 2.2 GHz; Zo = 50 Ω. (1) VS = 5.5 V. (2) VS = 5 V. (3) VS = 4.5 V.

Fig 11. Load power as a function of drive power at

2.2 GHz; typical values.

Product data sheet Rev. 02 — 24 September 2004 8 of 14

Philips Semiconductors

BGA2716

MMIC wideband ampliﬁer

001aab263

(3)

(1)

(2)

f (MHz)

(dB)

0 250020001000 1500500

Zo = 50 Ω. (1) IS = 19.5 mA; VS = 5.5 V. (2) IS = 15.9 mA; VS = 5 V. (3) IS = 12.4 mA; VS = 4.5 V.

Fig 12. Noise ﬁgure as a function of frequency; typical

values.

0 400030001000 2000

001aab264

f (MHz)

IS = 15.9 mA; VS = 5 V; Zo = 50 Ω.

Fig 13. Stability factor as a function of frequency;

typical values.

Product data sheet Rev. 02 — 24 September 2004 9 of 14

Philips Semiconductors

BGA2716

MMIC wideband ampliﬁer

Table 8: Scattering parameters

VS = 5 V; IS = 15.9 mA; PD =−35 dBm; Zo = 50Ω; T

f (MHz) s

Magnitude (ratio)

Angle (deg)

Magnitude (ratio)

100 0.182562 102.7794 12.69581 13.48682 0.029472 28.74955 0.39239 91.48628 1.3 200 0.123465 87.55274 13.13419 −5.272917 0.035438 −2.202361 0.267851 62.37296 1.2 400 0.107855 58.58513 13.47149 −31.7377 0.035299 −22.54301 0.227252 24.6455 1.2 600 0.114731 40.14071 13.57901 −53.09631 0.033167 −43.06353 0.227993 −3.493572 1.3 800 0.130176 24.28555 13.67457 −73.60665 0.033194 −59.63503 0.234967 −31.11084 1.3 1000 0.144984 9.657616 13.91705 −94.01973 0.029047 −76.09972 0.239818 −60.54722 1.4 1200 0.160922 −7.518892 14.10949 −114.55 0.028188 −88.34045 0.242141 −91.56898 1.4 1400 0.179351 −23.35989 14.2808 −135.3117 0.025188 −101.2729 0.243087 −124.5484 1.4 1600 0.20199 −41.01349 14.3825 −156.7041 0.022257 −110.3342 0.24499 −158.6224 1.5 1800 0.218268 −60.71294 14.26935 −178.3843 0.019611 −121.0192 0.255598 167.5983 1.7 2000 0.233965 −81.48254 14.0667 160.1504 0.018087 −127.6765 0.269829 136.117 1.8 2200 0.242904 −103.1109 13.83968 138.2379 0.017203 −137.8213 0.283613 106.0987 1.9 2400 0.246576 −125.52 13.46447 115.7594 0.016318 −138.8717 0.29058 77.95189 2.0 2600 0.249069 −148.8707 12.74638 93.38644 0.015514 −147.6622 0.281505 50.68612 2.2 2800 0.243665 −172.646 11.87558 71.02792 0.014954 −152.1988 0.25135 24.40624 2.5 3000 0.233266 163.9035 10.94049 50.42722 0.015522 −163.8718 0.211425 −0.674037 2.7 3200 0.222055 140.7754 10.05626 30.75908 0.016261 −170.5637 0.165534 −23.9944 2.9 3400 0.207486 117.0531 9.576357 11.98315 0.016664 −176.5407 0.118726 −46.28101 3.0 3600 0.191654 94.64431 9.199166 −7.677643 0.016982 176.9385 0.083354 −72.36691 3.2 3800 0.175783 71.9551 8.912598 −27.73098 0.017094 165.8227 0.058549 −109.9804 3.3 4000 0.163768 49.89436 8.618058 −48.90874 0.017414 157.6095 0.055225 −163.7132 3.3

amb

Angle (deg)

= 25°C.

Magnitude (ratio)

Angle (deg)

Magnitude (ratio)

K-factor

Angle (deg)

Product data sheet Rev. 02 — 24 September 2004 10 of 14

Philips Semiconductors

BGA2716

MMIC wideband ampliﬁer

9. Package outline

Plastic surface mounted package; 6 leads SOT363

pin 1 index

132

wBM

detail X

v M

0 1 2 mm

scale

DIMENSIONS (mm are the original dimensions)

UNIT

1.1

0.8

OUTLINE

VERSION

SOT363 SC-88

max

0.1

0.30

0.20

IEC JEDEC EIAJ

0.25

0.10

2.2

1.8

1.35

1.3

1.15

REFERENCES

0.65

Qywv

2.2

0.45

2.0

0.15

0.25

0.15

0.2 0.10.2

EUROPEAN

PROJECTION

ISSUE DATE

97-02-28

Fig 14. Package outline; SOT363 (SC-88).

Product data sheet Rev. 02 — 24 September 2004 11 of 14

Philips Semiconductors

MMIC wideband ampliﬁer

BGA2716

10. Revision history

Table 9: Revision history

Document ID Release date Data sheet status Change notice Doc. number Supersedes

BGA2716_2 20040924 Product data sheet - 9397 750 13292 BGA2716_N_1 Modiﬁcations:

BGA2716_N_1 20040202 Preliminary data sheet - 9397 750 12827 -

• The format of this data sheet has been redesigned to comply with the new presentation and

information standard of Philips Semiconductors

Product data sheet Rev. 02 — 24 September 2004 12 of 14

Philips Semiconductors

11. Data sheet status

BGA2716

MMIC wideband ampliﬁer

Level Data sheet status

I Objective data Development This data sheet contains data from the objective speciﬁcation for product development. Philips

II Preliminary data Qualiﬁcation This data sheetcontains data fromthepreliminary speciﬁcation. Supplementary data willbe published

III Product data Production This data sheet contains data from the product speciﬁcation. Philips Semiconductors reserves the

[1] Please consult the most recently issued data sheet before initiating or completing a design. [2] The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at

URL http://www.semiconductors.philips.com.

[3] For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.

[1]

Product status

12. Deﬁnitions

Short-form speciﬁcation — The data in a short-form speciﬁcation is

extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook.

Limiting values deﬁnition — Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the speciﬁcation is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information — Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty thatsuch applications will be suitable for the speciﬁed use without further testing or modiﬁcation.

[2] [3]

Deﬁnition

Semiconductors reserves the right to change the speciﬁcation in any manner without notice.

at a laterdate. Philips Semiconductors reserves the right to changethe speciﬁcation without notice, in order to improve the design and supply the best possible product.

right to make changes atany time in order to improve thedesign, manufacturing and supply.Relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN).

13. Disclaimers

Life support — These products are not designed for use in life support

appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application.

Right to make changes — Philips Semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notiﬁcation (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, andmakes norepresentations or warrantiesthat these productsare free frompatent, copyright, or maskwork right infringement, unless otherwise speciﬁed.

14. Contact information

For additional information, please visit: http://www.semiconductors.philips.com For sales ofﬁce addresses, send an email to: sales.addresses@www.semiconductors.philips.com

Product data sheet Rev. 02 — 24 September 2004 13 of 14

Philips Semiconductors

15. Contents

1 Product proﬁle . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.1 General description. . . . . . . . . . . . . . . . . . . . . . 1

1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1

1.4 Quick reference data. . . . . . . . . . . . . . . . . . . . . 1

2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2

3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2

4 Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2

5 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2

6 Thermal characteristics. . . . . . . . . . . . . . . . . . . 3

7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3

8 Application information. . . . . . . . . . . . . . . . . . . 4

8.1 Application examples . . . . . . . . . . . . . . . . . . . . 5

9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 11

10 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12

11 Data sheet status . . . . . . . . . . . . . . . . . . . . . . . 13

12 Deﬁnitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

13 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13

14 Contact information . . . . . . . . . . . . . . . . . . . . 13

BGA2716

MMIC wideband ampliﬁer

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights.

Published in The Netherlands

Date of release: 24 September 2004

Document number: 9397 750 13292

Datasheet BGA2716 Datasheet (Philips)

Specifications and Main Features

Frequently Asked Questions

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