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BGA2716
MMIC wideband amplifier
Rev. 02 — 24 September 2004 Product data sheet
1. Product profile
1.1 General description
Silicon Monolithic Microwave Integrated Circuit (MMIC) wideband amplifier with internal
matching circuit in a 6-pin SOT363 SMD plastic package.
CAUTION
MSC895
This device is sensitive to electrostatic discharge (ESD). Therefore care should be taken
during transport and handling.
1.2 Features
■ Internally matched to 50 Ω
■ Wide frequency range (3.2 GHz at 3 dB bandwidth)
■ Flat 23 dB gain (±1 dB up to 2.7 GHz)
■ 9 dBm output power at 1 dB compression point
■ Good linearity for low current (IP3
= 22 dBm)
out
■ Low second harmonic; −38 dBc at PL = −5 dBm
■ Unconditionally stable (K ≥ 1.2).
1.3 Applications
■ LNB IF amplifiers
■ Cable systems
■ ISM
■ General purpose.
1.4 Quick reference data
Table 1: Quick reference data
Symbol Parameter Conditions Min Typ Max Unit
V
S
I
S
2
s
21
NF noise figure f = 1 GHz - 5.3 - dB
P
L(sat)
DC supply voltage - 5 6 V
supply current - 15.9 - mA
insertion power gain f = 1 GHz - 22.9 - dB
saturated load power f = 1 GHz - 11.6 - dBm
Philips Semiconductors
2. Pinning information
Table 2: Pinning
Pin Description Simplified outline Symbol
1V
2, 5 GND2
3 RF_OUT
4 GND1
6 RF_IN
3. Ordering information
Table 3: Ordering information
Type number Package
BGA2716 - plastic surface mounted package; 6 leads SOT363
BGA2716
MMIC wideband amplifier
S
132
56
SOT363
4
Name Description Version
1
6
4
3
2, 5
sym052
4. Marking
Table 4: Marking
Type number Marking code
BGA2716 B7-
5. Limiting values
Table 5: Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
S
I
S
P
tot
T
stg
T
j
P
D
DC supply voltage RF input AC
-6V
coupled
supply current - 30 mA
total power dissipation Tsp≤ 90 °C - 200 mW
storage temperature −65 +150 °C
junction temperature - 150 °C
maximum drive power - −10 dBm
9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 24 September 2004 2 of 14
Philips Semiconductors
6. Thermal characteristics
Table 6: Thermal characteristics
Symbol Parameter Conditions Typ Unit
R
th(j-sp)
thermal resistance from junction
to solder point
7. Characteristics
Table 7: Characteristics
VS=5V; IS= 15.9 mA; Tj=25°C; measured on demo board; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
I
S
s
21
s
11
s
22
s
12
NF noise figure f = 1 GHz - 5.3 5.4 dB
B bandwidth at s
K stability factor f = 1 GHz - 1.4 -
P
L(sat)
P
L(1dB)
IM2 second order
IP3
in
IP3
out
supply current 13 15.9 21 mA
2
insertion power
gain
2
input return
losses
2
output return
losses
2
isolation f = 1.6 GHz 30 31 - dB
saturated load
power
load power at 1 dB gain compression;
intermodulation
product
input, third
order intercept
point
output, third
order intercept
point
BGA2716
MMIC wideband amplifier
P
= 200 mW;
tot
T
≤ 90 °C
sp
f = 100 MHz 21 22.1 23 dB
f = 1 GHz 22 22.9 24 dB
f = 1.8 GHz 22 23.1 25 dB
f = 2.2 GHz 21 22.8 24 dB
f = 2.6 GHz 20 22.1 24 dB
f = 3 GHz 19 20.8 22 dB
f = 1 GHz 15 17 - dB
f = 2.2 GHz 10 12 - dB
f = 1 GHz 10 12 - dB
f = 2.2 GHz 9 11 - dB
f = 2.2 GHz 33 35 - dB
f = 2.2 GHz - 5.5 5.6 dB
2−3 dB below flat
21
3 3.2 - GHz
gain at 1 GHz
f = 2.2 GHz - 1.9 f = 1 GHz 10 11.6 - dBm
f = 2.2 GHz 6 7.5 - dBm
8 8.9 - dBm
f = 1 GHz
at 1 dB gain compression;
5 6.1 - dBm
f = 2.2 GHz
= −5 dBm;
at P
L
f
= 1 GHz
0
36 38 - dBc
f = 1 GHz −2 −0.7 - dBm
f = 2.2 GHz −8 −6.9 - dBm
f = 1 GHz 21 22.2 - dBm
f = 2.2 GHz 15 15.9 - dBm
300 K/W
9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 24 September 2004 3 of 14
Philips Semiconductors
8. Application information
Figure 1 shows a typical application circuit for the BGA2716 MMIC. The device is
internally matchedto 50 Ω, and thereforedoes not need any external matching. The value
of the input and output DC blocking capacitors C2 and C3 should not be more than 100 pF
for applications above 100 MHz. However, when the device is operated below 100 MHz,
the capacitor value should be increased.
The nominal value of the RF choke L1 is 100 nH. At the frequencies below 100 MHz this
value should be increased. At frequencies above 1 GHz, a lower value can be used to
tune the output return loss. For optimal results, a good quality chip inductor or a
wire-wound SMD type should be chosen.
Both the RF choke and the 22 nF supply decoupling capacitor C1 should be located as
close as possible to the MMIC.
The printed-circuit board (PCB) topground plane, connectedto pins 2, 4 and 5 must beas
close as possible to the MMIC, and ideally directly beneath it. When using via holes, use
multiple via holes, located as close as possible to the MMIC.
BGA2716
MMIC wideband amplifier
V
S
RF input RF output
Fig 1. Typical application circuit.
C1
V
S
C2 C3
RF_IN
RF_OUT
GND2GND1
L1
mgu436
Figure 2 shows the PCB layout, used for the standard demonstration board.
9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 24 September 2004 4 of 14
Philips Semiconductors
BGA2716
MMIC wideband amplifier
30 mm
30 mm
PH
PH
C2
DUT
C1
PHILIPS
OUTIN
V+
PHILIPS
C3
L1
OUTIN
V+
001aab256
Material = FR4; thickness = 0.6 mm, εr = 4.6.
Fig 2. PCB layout and demonstration board showing components.
8.1 Application examples
The excellent wideband characteristics of the MMIC make it an ideal building block in IF
amplifier such as LNBs (see Figure 3).
9397 750 13292 © Koninklijke Philips Electronics N.V. 2004. All rights reserved.
Product data sheet Rev. 02 — 24 September 2004 5 of 14
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