Philips BFR93 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR93
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93
FEATURES
• Very low intermodulation distortion
• High power gain
• Excellent wideband properties and
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT93.
page
3
low noise up to high frequencies
due to its very high transition
frequency.
APPLICATIONS
• RF wideband amplifiers and
oscillators.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
12
Top view
Marking code: R1p.
MSB003
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
P
C
f
CBO
CEO
C
tot
re
T
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
collector current (DC) − 35 mA
total power dissipation Ts≤ 95 °C − 300 mW
feedback capacitance IC= 2 mA; VCE= 5 V; f = 1 MHz 0.8 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz;
5 − GHz
Tj=25°C
G
UM
F noise figure I
d
im
maximum unilateral power gain IC= 30 mA; VCE= 5 V; f = 500 MHz;
T
=25°C
amb
= 2 mA; VCE= 5 V; f = 500 MHz;
C
T
=25°C
amb
intermodulation distortion IC= 30 mA; VCE=5V; RL=75Ω;
16.5 − dB
1.9 − dB
−60 − dB
VO= 300 mV; fp+fq−fr= 493.25 MHz;
T
=25°C
amb
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 15 V
collector-emitter voltage open base − 12 V
emitter-base voltage open collector − 2V
collector current (DC) − 35 mA
total power dissipation Ts≤ 95 °C; note 1 − 300 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
1. T
is the temperature at the soldering point of the collector pin.
s
1997 Oct 29 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure (note 2) I
d
im
thermal resistance from junction to soldering point Ts≤ 95 °C; note 1 260 K/W
is the temperature at the soldering point of the collector pin.
collector cut-off current IE= 0; VCB=10V −−50 nA
DC current gain IC= 30 mA; VCE= 5 V 40 90 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.7 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 1.8 − pF
feedback capacitance IC= 2 mA; VCE= 5 V; f = 1 MHz;
T
=25°C
amb
− 0.8 − pF
transition frequency IC= 30 mA; VCE= 5 V; f = 500 MHz − 5 − GHz
maximum unilateral power gain
(note 1)
IC= 30 mA; VCE= 5 V; f = 500 MHz;
T
=25°C
amb
= 2 mA; VCE= 5 V; f = 500 MHz;
C
ZS= opt.; T
amb
=25°C
− 16.5 − dB
− 1.9 − dB
intermodulation distortion note 3 −−60 − dB
Notes
1. G
is the maximum unilateral power gain, assuming S12 is zero and
UM
2. Die mounted in a SOT37 package (BFR91).
= 30 mA; VCE= 5 V; RL=75Ω; VSWR < 2; T
3. I
C
Vp=VO= 300 mV at fp= 495.25 MHz;
Vq=VO−6 dB at fq= 503.25 MHz;
Vr=VO−6 dB at fr= 505.25 MHz;
measured at fp+fq−fr= 493.25 MHz.
amb
=25°C;
2
S
G
UM
10 log
--------------------------------------------------------------
1
–
21
2
S
1
–
11
dB=
2
S
22
1997 Oct 29 3
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR93
ΩΩΩ
680 pF
+24 V
560
680 pF
DUT
16 Ω
MEA454
Ω
handbook, halfpage
L3
240
1.2 k
Ω
390
L2
680 pF
75 Ω
input
L2=L3=5µH Ferroxcube choke, catalogue number
3122 10820150.
L1 = 4 turns 0.35 mm copper wire; winding pitch 1 mm; internal
diameter 4 mm.
L1
Fig.2 Intermodulation distortion test circuit.
75 Ω
output
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
150
Fig.3 Power derating curve.
Ts(
MBG246
o
C)
120
handbook, halfpage
h
FE
80
40
0
0102030
VCE= 5 V; Tj=25°C.
MCD087
I (mA)
C
Fig.4 DC current gain as a function of
collector current; typical values.
1997 Oct 29 4
handbook, halfpage
1
C
c
(pF)
0.8
0.6
0.4
0.2
0
048 16
IE=ie= 0; f = 1 MHz; Tj=25°C.
12
Fig.5 Collector capacitance as a function of
collector-base voltage; typical values.
MEA450
VCB (V)
20
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