Philips BFR92A Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR92A
NPN 5 GHz wideband transistor
Product specification
Supersedes data of September 1995
File under discrete semiconductors, SC14
1997 Oct 29
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
FEATURES
• High power gain
• Low noise figure
• Low intermodulation distortion.
APPLICATIONS
• RF wideband amplifiers and
oscillators.
DESCRIPTION
NPN wideband transistor in a plastic
SOT23 package.
PNP complement: BFT92.
PINNING
PIN DESCRIPTION
1 base
2 emitter
age
12
Top view
Marking code: P2p.
3
MSB003
Fig.1 SOT23.
3 collector
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
CBO
V
CEO
I
C
P
tot
C
re
f
T
G
UM
F noise figure I
V
O
collector-base voltage − 20 V
collector-emitter voltage − 15 V
collector current (DC) − 25 mA
total power dissipation Ts≤ 95 °C − 300 mW
feedback capacitance IC=ic= 0; VCE= 10 V; f = 1 MHz 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz 5 − GHz
maximum unilateral power gain IC= 15 mA; VCE= 10 V; f = 1 GHz;
=25°C
T
amb
I
= 15 mA; VCE= 10 V; f = 2 GHz;
C
T
=25°C
amb
= 5 mA; VCE= 10 V; f = 1 GHz;
C
Γs= Γ
opt
; T
amb
=25°C
output voltage dim= −60 dB; IC= 14 mA; VCE=10V;
14 − dB
8 − dB
2.1 − dB
150 − mV
RL=75Ω;fp+fq−fr= 793.25 MHz
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
collector current (DC) − 25 mA
total power dissipation Ts≤ 95 °C; note 1; see Fig.3 − 300 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector pin.
1. T
s
1997 Oct 29 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-s
Note
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
c
C
e
C
re
f
T
G
UM
F noise figure I
V
O
d
2
thermal resistance from junction to soldering point Ts≤ 95 °C; note 1 260 K/W
is the temperature at the soldering point of the collector pin.
collector leakage current IE= 0; VCB=10V −−50 nA
DC current gain IC= 15 mA; VCE= 10 V; see Fig.4 40 90 −
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz;
− 0.6 − pF
see Fig.5
emitter capacitance IC=ic= 0; VEB= 10 V; f = 1 MHz − 1.2 − pF
feedback capacitance IC=ic= 0; VCE= 10 V; f = 1 MHz − 0.35 − pF
transition frequency IC= 15 mA; VCE= 10 V; f = 500 MHz;
− 5 − GHz
see Fig.6
maximum unilateral power
gain (note 1)
IC= 15 mA; VCE= 10 V; f = 1 GHz;
T
=25°C
amb
= 15 mA; VCE= 10 V; f = 2 GHz;
I
C
T
=25°C
amb
= 5 mA; VCE= 10 V; f = 1 GHz;
C
Γs= Γ
opt
; T
amb
=25°C;
− 14 − dB
− 8 − dB
− 2.1 − dB
see Figs 13 and 14
= 5 mA; VCE= 10 V; f = 2 GHz;
I
C
Γs= Γ
opt
; T
amb
=25°C;
− 3 − dB
see Figs 13 and 14
output voltage notes 2 and 3 − 150 − mV
second order intermodulation
notes 2 and 4; see Fig.16 −−50 − dB
distortion
Notes
1. G
is the maximum unilateral power gain, assuming S12 is zero and .
UM
G
UM
2. Measured on the same die in a SOT37 package (BFR90A).
3. dim= −60 dB (DIN 45004B); IC= 14 mA; VCE= 10 V; RL=75Ω; VSWR < 2; T
Vp=VO at dim= −60 dB; fp= 795.25 MHz;
Vq=VO−6 dB; fq= 803.25 MHz;
Vr=VO−6 dB; fr= 805.25 MHz;
measured at fp+fq−fr= 793.25 MHz.
4. IC= 14 mA; VCE= 10 V; RL=75Ω; VSWR < 2; T
amb
=25°C
Vp= 60 mV at fp= 250 MHz;
Vq= 60 mV at fq= 560 MHz;
measured at fp+fq= 810 MHz.
1997 Oct 29 3
=
amb
10 log
--------------------------------------------------------------
1
S
–
11
=25°C
2
S
21
2
1
S
–
˙
dB
2
22
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92A
handbook, full pagewidth
L1=L3=5µH choke.
L2 =3 turns 0.4 mm copper wire, internal diameter 3 mm, winding pitch 1 mm.
V
BB
75 Ω
input
2.2 nF
33 kΩ
L1
1 nF
Fig.2 Intermodulation distortion and second harmonic distortion MATV test circuit.
L2
300 Ω
3.3 pF
1 nF
DUT
2.2 nF
L3
18 Ω
1 nF
0.82 pF
MBB269
V
CC
output
75 Ω
150
MEA425 - 1
o
Ts(
C)
400
handbook, halfpage
P
tot
(mW)
300
200
100
0
0 50 100 200
Fig.3 Power derating curve.
1997 Oct 29 4
I (mA)
C
MCD074
120
handbook, halfpage
h
FE
80
40
0
0102030
VCE= 10 V; Tj=25°C.
Fig.4 DC current gain as a function of collector
current; typical values.
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