Philips BFR92 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR92
NPN 5 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92
DESCRIPTION
NPN transistor in a plastic SOT23
envelope primarily intended for use in
RF wideband amplifiers and
oscillators. The transistor features
low intermodulation distortion and
high power gain; due to its very high
transition frequency, it also has
excellent wideband properties and
low noise up to high frequencies.
PINNING
PIN DESCRIPTION
Code: P1p
1 base
2 emitter
3 collector
page
3
12
Top view
MSB003
PNP complement is BFT92.
Fig.1 SOT23.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
V
V
I
P
f
CBO
CEO
C
tot
T
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
DC collector current − 25 mA
total power dissipation up to Ts=95°C; note 1 − 300 mW
transition frequency IC= 14 mA; VCE= 10 V; f = 500 MHz;
5 − GHz
Tj=25°C
C
re
G
UM
F noise figure I
V
o
feedback capacitance IC= 2 mA; VCE= 10 V; f = 1 MHz 0.4 − pF
maximum unilateral power gain IC= 14 mA; VCE= 10 V; f = 500 MHz;
T
=25°C
amb
= 2 mA; VCE= 10 V; f = 500 MHz;
C
T
=25°C; Zs= opt.
amb
output voltage dim= −60 dB; IC= 14 mA; VCE= 10 V;
RL=75Ω; T
f
= 493.25 MHz
(p+q−r)
amb
=25°C;
18 − dB
2.4 − dB
150 − mV
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
P
tot
T
stg
T
j
collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 2V
DC collector current − 25 mA
total power dissipation up to Ts=95°C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
September 1995 2
Philips Semiconductors Product specification
NPN 5 GHz wideband transistor BFR92
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
thermal resistance from junction to
soldering point
Note
is the temperature at the soldering point of the collector tab.
1. T
s
CHARACTERISTICS
=25°C unless otherwise specified.
T
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
f
T
C
C
C
G
c
e
re
UM
collector cut-off current IE= 0; VCB= 10 V −−50 nA
DC current gain IC= 14 mA; VCE= 10 V 40 90 −
transition frequency IC= 14 mA; VCE= 10 V; f = 500 MHz − 5 − GHz
collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 0.75 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 0.8 − pF
feedback capacitance IC= 2 mA; VCE= 10 V; f = 1 MHz;
maximum unilateral power gain
(note 1)
F noise figure (see Fig.2 and note 2) I
V
o
output voltage note 3 − 150 − mV
up to Ts=95°C; note 1 260 K/W
− 0.4 − pF
T
=25°C
amb
IC= 14 mA; VCE= 10 V;
f = 500 MHz; T
= 2 mA; VCE= 10 V; f = 500 MHz;
C
T
=25°C; Zs= opt.
amb
amb
=25°C
− 18 − dB
− 2.4 − dB
Notes
1. G
is the maximum unilateral power gain, assuming S12is zero and
UM
2. Crystal mounted in a SOT37 envelope (BFR90).
3. dim= −60 dB (DIN 45004B); IC= 14 mA; VCE= 10 V; RL=75Ω; T
Vp=Vo at dim= −60 dB; fp= 495.25 MHz;
Vq=Vo−6 dB; fq= 503.25 MHz;
Vr=Vo−6 dB; fr= 505.25 MHz;
measured at f
) = 493.25 MHz.
(p+q−r
amb
=
G
UM
=25°C;
--------------------------------------------------------------
10 log
1
S
–
11
2
S
21
2
1
S
–
˙
dB
2
22
September 1995 3
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