Philips BFR540 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFR540

NPN 9 GHz wideband transistor

Product speciﬁcation Supersedes data of 1995 September

1999 Aug 23

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFR540

FEATURES

• High power gain

The transistor is encapsulated in a plastic SOT23 envelope.

• Low noise figure

• High transition frequency

• Gold metallization ensures

excellent reliability.

PINNING

PIN DESCRIPTION

Code: N29

page

3

1 base

DESCRIPTION

The BFR540 is an npn silicon planar

2 emitter 3 collector

12

Top view

MSB003

epitaxial transistor, intended for applications in the RF frontend in wideband applications in the GHz

Fig.1 SOT23.

range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optic systems.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V

CBO

V

CES

I

C

P

tot

h

FE

C

re

f

T

G

UM



S

21

F noise ﬁgure Γ

collector-base voltage open emitter −−20 V collector-emitter voltage RBE=0 −−15 V DC collector current −−120 mA total power dissipation up to Ts = 70 °C; note 1 −−500 mW DC current gain IC = 40 mA; VCE = 8 V 60 120 250 feedback capacitance IC=ic= 0; VCB= 8 V; f = 1 MHz − 0.6 − pF transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz maximum unilateral

power gain

2

insertion power gain IC = 40 mA; VCE = 8 V;

IC = 40 mA; VCE = 8 V; T

= 25 °C; f = 900 MHz

amb

= 40 mA; VCE = 8 V;

I

C

T

= 25 °C; f = 2 GHz

amb

T

= 25 °C; f = 900 MHz

amb

T

Γ

T

Γ

T

s amb

= Γ

= 10 mA; VCE= 8 V;

opt;IC

=25°C; f = 900 MHz

= 40 mA; VCE= 8 V;

opt;IC

=25°C; f = 900 MHz

= 10 mA; VCE= 8 V;

opt;IC

=25°C; f = 2 GHz

− 14 − dB

− 7 − dB

12 13 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

Note

is the temperature at the soldering point of the collector tab.

1. T

s

1999 Aug 23 2

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFR540

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CES

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

collector-base voltage open emitter − 20 V collector-emitter voltage RBE=0 − 15 V emitter-base voltage open collector − 2.5 V DC collector current − 120 mA total power dissipation up to Ts=70°C; note 1 − 500 mW storage temperature −65 150 °C junction temperature − 175 °C

from junction to soldering point see note 1 260 K/W

Note

is the temperature at the soldering point of the collector tab.

1. T

s

1999 Aug 23 3

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFR540

CHARACTERISTICS

Tj = 25 °C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

C

e

C

c

C

re

f

T

G

UM

S



21

F noise ﬁgure Γ

P

L1

ITO third order intercept point note 2 − 34 − dBm V

o

collector cut-off current IE = 0; VCB = 8 V −−50 nA DC current gain IC= 40 mA; VCE = 8 V 60 120 250 emitter capacitance IC = ic= 0; VEB = 0.5 V; f = 1 MHz − 2 − pF collector capacitance IE=ie= 0; VCB= 8 V; f = 1 MHz − 0.9 − pF feedback capacitance IC= 0; VCB= 8 V; f = 1 MHz − 0.6 − pF transition frequency IC = 40 mA; VCE = 8 V; f = 1 GHz − 9 − GHz maximum unilateral

power gain (note 1)

2

insertion power gain IC = 40 mA; VCE = 8 V;

output power at 1 dB gain compression

output voltage (note 3) IC= 40 mA; VCE=8 V;

IC = 40 mA; VCE = 8 V; T

= 25 °C; f = 900 MHz

amb

= 40 mA; VCE = 8 V;

I

C

= 25 °C; f = 2 GHz

T

amb

T

= 25 °C; f = 900 MHz

amb

T

Γ

T

Γ

T

= Γ

s amb

= Γ

s amb

= Γ

s amb

= 10 mA; VCE= 8 V;

opt;IC

=25°C; f = 900 MHz

= 40 mA; VCE= 8 V;

opt;IC

=25°C; f = 900 MHz

= 10 mA; VCE= 8 V;

opt;IC

=25°C; f = 2 GHz

IC= 40 mA; VCE=8 V;RL=50Ω; T

=25°C; f = 900 MHz

amb

ZL=ZS=75Ω;T

amb

=25°C

− 14 − dB

− 7 − dB

12 13 − dB

− 1.3 1.8 dB

− 1.9 2.4 dB

− 2.1 − dB

− 21 − dBm

− 550 − mV

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12 is zero and

UM

----------------------------------------------------------

1S

–()1S

T

G

C

amb

10

UM

= 40 mA; VCE=8 V;RL=50Ω;

=25°C; f = 900 MHz;

2

S

21

2

11

–()

dB.log=

2

22

fp = 900 MHz; fq= 902 MHz; measured at f

= 898 MHz and f

(2p−q)

(2q−p)

= 904 MHz.

3. dim= −60 dB (DIN 45004B); Vp=VO;Vq=VO−6 dB; fp= 795.25 MHz; VR=VO−6 dB; fq= 803.25 MHz; fr= 805.25 MHz; measured at f

= 793.25 MHz; preliminary data.

(p+q-r)

1999 Aug 23 4

Philips Semiconductors Product speciﬁcation

NPN 9 GHz wideband transistor BFR540

600

1/2 page (Datasheet)

P

tot

(mW)

400

200

0

0 50 100 200

Fig.2 Power derating curve.

150

MEA398 - 1

o

T ( C)

s

22 mm

10

MRA687

IC (mA)

250

handbook, halfpage

h

FE

200

150

100

50

0

−2

10

VCE= 8 V.

−1

10

1

Fig.3 DC current gain as a function of collector

current.

2

10

1.0

handbook, halfpage

C

re

(pF)

0.8

0.6

0.4

0.2

0

04812

IC = 0; f = 1 MHz.

MRA688

VCB (V)

Fig.4 Feedback capacitance as a function of

collector-base voltage.

1999 Aug 23 5

12

handbook, halfpage

f

T

(GHz)

8

4

0

−1

10

T

=25°C; f = 1 GHz.

amb

11010

IC (mA)

Fig.5 Transition frequency as a function of

collector current.

MRA689

V

= 8V

CE

VCE = 4V

2

Philips BFR540 Datasheet

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