Philips BFR54 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
ook, halfpage
M3D186
BFR54
NPN medium frequency transistor
Product specification
Supersedes data of September 1994
File under Discrete Semiconductors, SC04
1997 Jul 11
Philips Semiconductors Product specification
NPN medium frequency transistor BFR54
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 15 V).
PINNING
PIN DESCRIPTION
1 emitter
2 base
APPLICATIONS
3 collector
• Active probes
• Frequency multipliers
• Linear amplifiers.
handbook, halfpage
1
2
3
3
2
DESCRIPTION
NPN medium frequency transistor in a TO-92; SOT54
MAM182
1
plastic package.
Fig.1 Simplified outline (TO-92; SOT54)
and symbol.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
I
P
h
f
CBO
CEO
CM
tot
FE
T
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
peak collector current − 200 mA
total power dissipation T
≤ 25 °C − 500 mW
amb
DC current gain IC= 10 mA; VCE=1V 40 −
transition frequency IC= 10 mA; VCE= 10 V; f = 100 MHz 500 − MHz
1997 Jul 11 2
Philips Semiconductors Product specification
NPN medium frequency transistor BFR54
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CEO
V
EBO
I
C
I
CM
P
tot
T
stg
T
j
T
amb
Note
1. Transistor mounted on an FR4 printed-circuit board.
collector-base voltage open emitter − 40 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 4.5 V
collector current (DC) − 100 mA
peak collector current − 200 mA
total power dissipation T
≤ 25 °C; note 1 − 500 mW
amb
storage temperature −65 +150 °C
junction temperature − 150 °C
operating ambient temperature −65 +150 °C
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 250 K/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
=25°C unless otherwise specified.
T
amb
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
I
EBO
h
FE
V
CEsat
V
BEsat
C
c
C
e
C
re
f
T
collector cut-off current IE= 0; VCB=20V −−400 nA
I
= 0; VCB= 20 V; Tj= 125 °C −−30 µA
E
emitter cut-off current IC= 0; VEB=2V −−100 nA
DC current gain IC= 10 mA; VCE=1V 40 −−
collector-emitter saturation voltage IC= 10 mA; IB=1mA −−250 mV
base-emitter saturation voltage IC= 10 mA; IB=1mA 700 − 850 mV
collector capacitance IE=ie= 0; VCB=5V; f=1MHz −−4pF
emitter capacitance IC=ic= 0; VEB= 1 V; f = 1 MHz −−4.5 pF
feedback capacitance IC= 0 mA; VCB= 10 V; f = 1 MHz − 1.6 − pF
transition frequency VCE= 10 V; f = 100 MHz
= 10 mA 500 −−MHz
I
C
I
= 40 mA 490 −−MHz
C
1997 Jul 11 3
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