Philips BFR520T Datasheet
DISCRETE SEMICONDUCTORS
M3D173
DATA SHEET
BFR520T
NPN 9 GHz wideband transistor
Preliminary specification 1999 Oct 18
Philips Semiconductors Preliminary specification
NPN 9 GHz wideband transistor BFR520T
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC75) envelope.
PINNING
PIN DESCRIPTION
Code: N2
1 base
2 emitter
3 collector
DESCRIPTION
NPN transistor in a plastic SOT416 (SC75) envelope.
handbook, halfpage
3
It is intended for wideband applications such as satellite
TV tuners, cellular phones, cordless phones, pagers etc.,
with signal frequencies up to 2 GHz.
12
MAM337
Fig.1 SOT416.
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−70 mA
total power dissipation up to Ts= 118 °C; note 1 −−300 mW
DC current gain IC= 20 mA; VCE=6 V; Tj= 25 °C 60 120 250
transition frequency IC= 20 mA; VCE=6 V; f=1 GHz;
T
= 25 °C
amb
maximum unilateral power gain Ic=20 mA; VCE= 6 V; f = 900 MHz;
T
= 25 °C
amb
=5 mA; VCE= 6 V; f = 900 MHz;
c
T
= 25 °C
amb
− 9 − GHz
− 15 − dB
− 1.1 1.6 dB
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
V
I
P
T
T
CBO
CES
EBO
C
tot
stg
j
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 70 mA
total power dissipation up to Ts= 118 °C; note 1 − 300 mW
storage temperature −65 150 °C
junction temperature − 175 °C
Note
is the temperature at the soldering point of the collector tab.
1. T
s
1999 Oct 18 2
Philips Semiconductors Preliminary specification
NPN 9 GHz wideband transistor BFR520T
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
Note
1. T
is the temperature at the soldering point of the collector tab.
s
CHARACTERISTICS
T
=25 °C, unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
2
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 26 − dBm
thermal resistance from junction to
up to Ts= 118 °C; note 1 190 K/W
soldering point
collector cut-off current IE=0; VCE=6 V −−50 nA
DC current gain IC= 20mA; VCE= 6 V 60 120 250
emitter capacitance IC=ic=0; VEB= 0.5 V; f = 1 MHz − 1 − pF
collector capacitance IE=ie=0; VCB=6 V; f=1 MHz − 0.5 − pF
feedback capacitance IC=0; VCB=6 V; f=1 MHz − 0.4 − pF
transition frequency IC= 20 mA; VCE=6 V; f=1 GHz;
= 25 °C
T
amb
maximum unilateral power gain
(note 1)
IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
= 25 °C
amb
= 20 mA; VCE=6 V; f=2 GHz;
I
C
T
= 25 °C
amb
insertion power gain IC= 20 mA; VCE= 6 V; f = 900 MHz;
T
= 25 °C
amb
output power at 1 dB gain
compression
= Γ
s
f = 900 MHz; T
Γ
= Γ
s
f = 900 MHz; T
= Γ
Γ
s
f=2 GHz; T
Ic=20 mA; VCE=6 V; RL= 50 Ω;
f = 900 MHz; T
=5 mA; VCE=6 V;
opt;IC
= 25 °C
amb
= 20 mA; VCE=6 V;
opt;IC
= 25 °C
amb
=5 mA; VCE=6 V;
opt;IC
= 25 °C
amb
= 25 °C
amb
− 9 − GHz
− 15 − dB
− 9 − dB
13 14 − dB
− 1.1 1.6 dB
− 1.6 2.1 dB
− 1.9 − dB
− 17 − dBm
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12is zero and
UM
G
UM
= 20 mA; VCE=6 V; RL=50 Ω; f = 900 MHz; T
C
f
= 900 MHz; fq= 902 MHz; measured at f
p
10 log
---------------------- -------------- ------------------- --- dB.=
1S
–()1S
2
S
21
2
11
2
–()
22
(2p−q)
= 25 °C;
amb
= 898 MHz and at f
(2q−p)
= 904 MHz.
1999 Oct 18 3
Philips Semiconductors Preliminary specification
Fig.2 Power derating curve.
handbook, halfpage
0 50 100 200
400
300
100
0
200
MRC030 - 1
150
P
tot
(mW)
Ts(
o
C)
Fig.4 Feedback capacitance as a function of
collector-base voltage.
IC=0; f=1 MHz.
handbook, halfpage
MRC021
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0246810
V (V)
CB
C
re
(pF)
NPN 9 GHz wideband transistor BFR520T
200
handbook, halfpage
h
FE
150
100
50
0
−2
10
VCE=6 V; Tj=25 °C.
−1
10
11010
MRC028
IC(mA)
Fig.3 DC current gain as a function of collector
current.
2
1999 Oct 18 4
12
handbook, halfpage
f
T
(GHz)
10
8
6
4
2
0
1 10 100
f=1 GHz; T
amb
=25 °C.
V
CE
MRC022
= 8 V
3 V
IC(mA)
Fig.5 Transition frequency as a function of
collector current.
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