Philips BFR505T Datasheet
DISCRETE SEMICONDUCTORS
M3D173
DATA SHEET
BFR505T
NPN 9 GHz wideband transistor
Preliminary specification 1999 Oct 18
Philips Semiconductors Preliminary specification
NPN 9 GHz wideband transistor BFR505T
FEATURES
• Low current consumption
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures excellent reliability
• SOT416 (SC75) envelope.
DESCRIPTION
NPN transistor in a plastic SOT416 (SC75) envelope.
It is intended for low power amplifiers, oscillators and
mixers particularly in RF portable communication
equipment (cellular phones, cordless phones, pagers) up
to 2 GHz.
PINNING
PIN DESCRIPTION
Code: N0
1 base
2 emitter
3 collector
handbook, halfpage
12
3
Fig.1 SOT416.
MAM337
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
f
T
G
UM
F noise figure I
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−18 mA
total power dissipation up to Ts= 147 °C; note 1 −−150 mW
DC current gain IC= 5 mA; VCE=6 V; Tj=25 °C 60 120 250
transition frequency IC= 5 mA; VCE=6 V; f=1 GHz;
= 25 °C
T
amb
maximum unilateral power gain Ic=5 mA; VCE= 6 V; f = 900 MHz;
T
= 25 °C
amb
=1.25 mA; VCE=6 V;
c
f = 900 MHz; T
amb
= 25 °C
− 9 − GHz
− 17 − dB
− 1.2 1.7 dB
Note
1. T
is the temperature at the soldering point of the collector tab.
s
1999 Oct 18 2
Philips Semiconductors Preliminary specification
NPN 9 GHz wideband transistor BFR505T
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage open collector − 2.5 V
DC collector current − 18 mA
total power dissipation up to Ts= 147 °C; note 1 − 150 mW
storage temperature −65 +150 °C
junction temperature − 175 °C
thermal resistance from junction to
up to Ts= 147 °C; note 1 190 K/W
soldering point
Note
1. T
is the temperature at the soldering point of the collector tab.
s
1999 Oct 18 3
Philips Semiconductors Preliminary specification
NPN 9 GHz wideband transistor BFR505T
CHARACTERISTICS
T
=25 °C, unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
2
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 10 − dBm
collector cut-off current IE=0; VCB=6 V −−50 nA
DC current gain IC= 5 mA; VCE= 6 V 60 120 250
emitter capacitance IC=ic=0; VEB= 0.5 V; f = 1 MHz − 0.4 − pF
collector capacitance IE=ie=0; VCB=6 V; f=1 MHz − 0.4 − pF
feedback capacitance IC=0; VCB= 0.5 V; f = 1 MHz − 0.3 − pF
transition frequency IC=5 mA; VCE=6 V; f=1 GHz;
= 25 °C
T
amb
maximum unilateral power gain
(note 1)
IC=5 mA; VCE= 6 V; f = 900 MHz;
= 25 °C
T
amb
I
=5 mA; VCE=6 V; f=2 GHz;
C
T
= 25 °C
amb
insertion power gain IC=5 mA; VCE= 6 V; f = 900 MHz;
= 25 °C
T
amb
output power at 1 dB gain
compression
= Γ
s
f = 900 MHz; T
= Γ
Γ
s
f = 900 MHz; T
Γ
= Γ
s
f=2 GHz; T
Ic=5 mA; VCE=6 V; RL= 50 Ω;
f = 900 MHz; T
= 1.25 mA; VCE=6 V;
opt;IC
= 25 °C
amb
=5 mA; VCE=6 V;
opt;IC
= 25 °C
amb
= 1.25 mA; VCE=6 V;
opt;IC
= 25 °C
amb
= 25 °C
amb
− 9 − GHz
− 17 − dB
− 10 − dB
13 14 − dB
− 1.2 1.7 dB
− 1.6 2.1 dB
− 1.9 − dB
− 4 − dBm
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12is zero and
UM
G
C
f
p
10 log
UM
----------------------- ------------- -------------------- -- dB.=
1S
–()1S
= 5 mA; VCE=6 V; RL=50 Ω; f = 900 MHz; T
= 900 MHz; fq= 902 MHz; measured at f
2
S
21
2
11
2
–()
22
(2p−q)
= 25 °C;
amb
= 898 MHz and at f
(2q−p)
= 904 MHz.
1999 Oct 18 4
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