Philips BFR505 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR505
NPN 9 GHz wideband transistor
Product specification
File under Discrete Semiconductors, SC14
September 1995
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505
FEATURES
• High power gain
• Low noise figure
• High transition frequency
• Gold metallization ensures
excellent reliability.
DESCRIPTION
The BFR505 is an npn silicon planar
epitaxial transistor, intended for
applications in the RF frontend in
wideband applications in the GHz
range, such as analog and digital
cellular telephones, cordless
telephones (CT1, CT2, DECT, etc.),
radar detectors, pagers and satellite
TV tuners (SATV).
The transistor is encapsulated in a
plastic SOT23 envelope.
QUICK REFERENCE DATA
PINNING
PIN DESCRIPTION
Code: N30
1 base
2 emitter
3 collector
page
3
12
Top view
MSB003
Fig.1 SOT23.
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
V
CBO
V
CES
I
C
P
tot
h
FE
C
re
f
T
G
UM
S
21
F noise figure Γ
collector-base voltage open emitter −−20 V
collector-emitter voltage RBE=0 −−15 V
DC collector current −−18 mA
total power dissipation up to Ts = 135 °C; note 1 −−150 mW
DC current gain IC = 5 mA; VCE = 6 V 60 120 250
feedback capacitance IC=ic= 0; VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz − 9 − GHz
maximum unilateral
power gain
2
insertion power gain IC = 5 mA; VCE = 6 V;
IC = 5 mA; VCE = 6 V;
T
= 25 °C; f = 900 MHz
amb
= 5 mA; VCE = 6 V;
I
C
T
= 25 °C; f = 2 GHz
amb
T
= 25 °C; f = 900 MHz
amb
T
Γ
T
Γ
T
s
amb
s
amb
s
amb
= Γ
= Γ
= Γ
= 1.25 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 1.25 mA; VCE= 6 V;
opt;IC
=25°C; f = 2 GHz
− 17 − dB
− 10 − dB
13 14 − dB
− 1.2 1.7 dB
− 1.6 2.1 dB
− 1.9 − dB
Note
1. T
is the temperature at the soldering point of the collector tab.
s
September 1995 2
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
V
CES
V
EBO
I
C
P
tot
T
stg
T
j
THERMAL RESISTANCE
R
th j-s
collector-base voltage open emitter − 20 V
collector-emitter voltage RBE=0 − 15 V
emitter-base voltage − 2.5 V
DC collector current continuous − 18 mA
total power dissipation up to Ts= 135 °C; note 1 − 150 mW
storage temperature −65 150 °C
junction temperature − 175 °C
SYMBOL PARAMETER THERMAL RESISTANCE
from junction to soldering point (note 1) 260 K/W
Note
1. T
is the temperature at the soldering point of the collector tab.
s
September 1995 3
Philips Semiconductors Product specification
NPN 9 GHz wideband transistor BFR505
CHARACTERISTICS
T
= 25 °C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
I
CBO
h
FE
C
e
C
c
C
re
f
T
G
UM
S
21
F noise figure Γ
P
L1
ITO third order intercept point note 2 − 10 − dBm
collector cut-off current IE = 0; VCB = 6 V −−50 nA
DC current gain IC= 5 mA; VCE = 6 V 60 120 250
emitter capacitance IC = ic= 0; VEB = 0.5 V; f = 1 MHz − 0.4 − pF
collector capacitance IE=ie= 0; VCB= 6 V; f = 1 MHz − 0.4 − pF
feedback capacitance IC= 0; VCB= 6 V; f = 1 MHz − 0.3 − pF
transition frequency IC = 5 mA; VCE = 6 V; f = 1 GHz − 9 − GHz
maximum unilateral power
gain (note 1)
2
insertion power gain IC = 5 mA; VCE = 6 V;
output power at 1 dB gain
compression
IC = 5 mA; VCE = 6 V;
T
= 25 °C; f = 900 MHz
amb
I
= 5 mA; VCE = 6 V;
C
T
= 25 °C; f = 2 GHz
amb
T
= 25 °C; f = 900 MHz
amb
T
Γ
T
Γ
T
= Γ
s
amb
= Γ
s
amb
= Γ
s
amb
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 900 MHz
= 5 mA; VCE= 6 V;
opt;IC
=25°C; f = 2 GHz
IC= 5 mA; VCE=6 V;RL=50Ω;
T
=25°C; f = 900 MHz
amb
− 17 − dB
− 10 − dB
13 14 − dB
− 1.2 1.7 dB
− 1.6 2.1 dB
− 1.9 − dB
− 4 − dBm
Notes
1. G
2. I
is the maximum unilateral power gain, assuming S12 is zero and
UM
G
UM
= 5 mA; VCE=6 V;RL=50Ω;T
C
--------------------------------------------------------------
10
1S
–
fp = 900 MHz; fq= 902 MHz;
measured at f
= 898 MHz and f
(2p−q)
2
S
21
2
1S
–
11
22
amb
(2q−p)
dB.log=
2
=25°C;
= 904 MHz.
September 1995 4
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