Philips BFR31, BFR30 Datasheet
DISCRETE SEMICONDUCTORS
DATA SH EET
BFR30; BFR31
N-channel field-effect transistors
Product specification
Supersedes data of April 1991
File under Discrete Semiconductors, SC07
1997 Dec 05
Philips Semiconductors Product specification
N-channel field-effect transistors BFR30; BFR31
DESCRIPTION
Planar epitaxial symmetrical junction N-channel
field-effect transistor in a plastic SOT23 package.
APPLICATIONS
• Low level general purpose amplifiers in thick and
thin-film circuits.
PINNING - SOT23
PIN SYMBOL DESCRIPTION
1 d drain
2 s source
(1)
(1)
3 g gate
Note
1. Drain and source are interchangeable.
QUICK REFERENCE DATA
handbook, halfpage
12
Top view
Marking codes:
BFR30: M1p.
BFR31: M2p.
3
g
MAM385
d
s
Fig.1 Simplified outline and symbol.
CAUTION
This product is supplied in anti-static packing to prevent
damage caused by electrostatic discharge during
transport and handling. For further information, refer to
Philips specs.: SNW-EQ-608, SNW-FQ-302A and
SNW-FQ-302B.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
V
P
I
DSS
DS
GSO
tot
drain-source voltage −±25 V
gate-source voltage open drain −−25 V
total power dissipation T
≤ 40 °C − 250 mW
amb
drain current VGS= 0; VDS=10V
BFR30 4 10 mA
BFR31 1 5 mA
y
common-source transfer admittance ID= 1 mA; VDS= 10 V; f = 1 kHz
fs
BFR30 1 4 mS
BFR31 1.5 4.5 mS
1997 Dec 05 2
Philips Semiconductors Product specification
N-channel field-effect transistors
BFR30; BFR31
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
DS
V
DGO
V
GSO
I
D
I
G
P
tot
T
stg
T
j
drain-source voltage −±25 V
drain-gate voltage open source −−25 V
gate-source voltage open drain −−25 V
drain current − 10 mA
forward gate current (DC) − 5mA
total power dissipation T
≤ 40 °C; note 1; see Fig.2 − 250 mW
amb
storage temperature −65 +150 °C
operating junction temperature − 150 °C
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
THERMAL CHARACTERISTICS
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 430 K/W
Note
1. Mounted on a ceramic substrate of 8 × 10 × 0.7 mm.
T
amb
MDA245
(°C)
300
handbook, halfpage
P
tot
(mW)
200
100
0
0
40 200
80 120 160
Fig.2 Power derating curve.
1997 Dec 05 3
Philips Semiconductors Product specification
N-channel field-effect transistors
BFR30; BFR31
CHARACTERISTICS
T
=25°C unless otherwise specified.
j
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
GSS
I
DSS
gate cut-off current VDS= 0; VGS= −10 V −−0.2 nA
drain current VGS= 0; VDS=10V
BFR30 4 10 mA
BFR31 1 5 mA
V
GS
gate-source voltage ID= 1 mA; VDS=10V
BFR30 −0.7 −3V
BFR31 0 −1.3 V
V
GS
gate-source voltage ID=50µA; VDS=10V
BFR30 −−4V
BFR31 −−2V
V
GSoff
gate-source cut-off voltage ID= 0.5 nA; VDS=10V
BFR30 −−5V
BFR31 −−2.5 V
y
common-source transfer admittance ID= 1 mA; VDS= 10 V; f = 1 kHz;
fs
T
=25°C
BFR30 1 4 mS
amb
BFR31 1.5 4.5 mS
y
common-source transfer admittance ID= 200 µA; VDS= 10 V; f = 1 kHz;
fs
T
=25°C
BFR30 0.5 − mS
amb
BFR31 0.75 − mS
y
common source output admittance ID= 1 mA; VDS= 10 V; f = 1 kHz
os
BFR30 − 40 µS
BFR31 − 25 µS
y
common source output admittance ID= 200 µA; VDS= 10 V; f = 1 kHz
os
BFR30 − 20 µS
BFR31 − 15 µS
C
is
C
rs
V
n
input capacitance VDS=10V; f=1MHz
I
=1mA − 4pF
D
I
= 0.2 nA − 4pF
D
feedback capacitance VDS= 10 V; f = 1 MHz; T
I
=1mA − 1.5 pF
D
I
= 200 µA − 1.5 pF
D
equivalent input noise voltage ID= 200 µA; VDS=10V;
amb
=25°C
− 0.5 µV
B = 0.6 to 100 Hz
1997 Dec 05 4
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