Philips BFR106 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFR106

NPN 5 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

a

NPN 5 GHz wideband transistor BFR106

DESCRIPTION

NPN silicon planar epitaxial transistor
in a plastic SOT23 envelope. It is
primarily intended for low noise,
general RF applications.

PINNING

PIN DESCRIPTION

Code: R7p

1 base

ge

3

2 emitter
3 collector

12

Top view

MSB003

Fig.1 SOT23.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V
V
I

C

P
h
f

T

G

V

CBO
CEO

tot

FE

UM

o

collector-base voltage open emitter −−20 V
collector-emitter voltage open base −−15 V
DC collector current −−100 mA
total power dissipation up to Ts=70°C; note 1 −−500 mW
DC current gain IC= 50 mA; VCE=9 V; T
transition frequency IC= 50 mA; VCE= 9 V; f = 500 MHz;

T

=25°C

amb

maximum unilateral power gain IC= 30 mA; VCE= 6 V; f = 800 MHz;

T

=25°C

amb

output voltage IC= 50 mA; VCE= 9 V; RL=75Ω;

T

=25°C; dim= −60 dB;

amb

f

= 793.25 MHz

(p+q−r)

=25°C25 80 −

amb

− 5 − GHz

− 11.5 − dB

− 350 − mV

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

collector-base voltage open emitter − 20 V
collector-emitter voltage open base − 15 V
emitter-base voltage open collector − 3V
DC collector current − 100 mA
total power dissipation up to Ts=70°C; note 1 − 500 mW
storage temperature −65 150 °C
junction temperature − 175 °C

Note

1. T

is the temperature at the soldering point of the collector tab.

s

September 1995 2

Philips Semiconductors Product specification

NPN 5 GHz wideband transistor BFR106

THERMAL RESISTANCE

SYMBOL PARAMETER CONDITIONS THERMAL RESISTANCE

R

th j-s

Note

is the temperature at the soldering point of the collector tab.

1. T

s

CHARACTERISTICS

=25°C unless otherwise specified.

T

j

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

I

CBO

h

FE

f

T

C

c

C

e

C

re

G

UM

F noise figure I

d

2

V

o

thermal resistance from junction to

up to Ts=70°C; note 1 210 K/W

soldering point

collector cut-off current IE= 0; VCB= 10 V −−100 nA
DC current gain IC= 50 mA; VCE=9 V 25 80 −
transition frequency IC= 50 mA; VCE= 9 V; f = 500 MHz;

T

=25°C

amb

− 5 − GHz

collector capacitance IE=ie= 0; VCB= 10 V; f = 1 MHz − 1.5 − pF
emitter capacitance IC=ic= 0; VEB= 0.5 V; f = 1 MHz − 4.5 − pF
feedback capacitance IC= 0; VCE= 10 V; f = 1 MHz − 1.2 − pF
maximum unilateral power gain

(note 1)

second order intermodulation

IC= 30 mA; VCE= 6 V; f = 800 MHz;
T

=25°C

amb

= 30 mA; VCE= 6 V; f = 800 MHz;

C

T

=25°C

amb

− 11.5 − dB

− 3.5 − dB

note 2 −−50 − dB

distortion
output voltage note 3 − 350 − mV

Notes

1. G

2. I

is the maximum unilateral power gain, assuming S12is zero and

UM

G

UM

= 30 mA; VCE= 6 V; RL=75Ω;T

C

f

= 810 MHz; Vo= 100 mV.

(p+q)

--------------------------------------------------------------

10 log



1S

–



2

S

21

2



1S



11

2

–

22

amb

dB.=

=25°C;

3. dim= −60 dB (DIN 45004B); IC= 50 mA; VCE= 9 V; RL=75Ω;T

September 1995 3

amb

=25°C; f

= 793.25 MHz.

(p+q−r)