Philips BFQ68 Datasheet

DISCRETE SEMICONDUCTORS

DATA SH EET

BFQ68

NPN 4 GHz wideband transistor

Product specification
File under Discrete Semiconductors, SC14

September 1995

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ68

DESCRIPTION

NPN transistor mounted in a four-lead
dual-emitter SOT122A envelope with
a ceramic cap. All leads are isolated
from the stud. Diffused
emitter-ballasting resistors and the
application of gold sandwich

PINNING

PIN DESCRIPTION

1 collector
2 emitter
3 base
4 emitter

page

4

31

metallization ensure an optimum
temperature profile and excellent
reliability properties. It features very
high output voltage capabilities.

Top view

2

MBK187

It is primarily intended for final stages
in MATV system amplifiers, and is
also suitable for use in low power

Fig.1 SOT122A.

band IV and V equipment.

QUICK REFERENCE DATA

SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT

V
I
P
f

CEO

C

tot

T

collector-emitter voltage open base − 18 V
collector current − 300 mA
total power dissipation up to Tc=110°C − 4.5 W
transition frequency IC= 240 mA; VCE= 15 V; f = 500 MHz;

4 − GHz

Tj=25°C

V

o

output voltage Ic= 240 mA; VCE= 15 V;

1.6 − V

dim= −60 dB; RL=75Ω;

P

L1

output power at 1 dB gain
compression

ITO third order intercept point I

f

= 793.25 MHz; T

(p+q−r)

Ic= 240 mA; VCE= 15 V; RL=75Ω;
f = 800 MHz; T

= 240 mA; VCE= 15 V; RL=75Ω;

c

f = 800 MHz; T

amb

amb

=25°C

=25°C

amb

=25°C

28 − dBm

47 − dBm

WARNING

Product and environmental safety - toxic materials

This product contains beryllium oxide. The product is entirely safe provided that the BeO disc is not damaged. All
persons who handle, use or dispose of this product should be aware of its nature and of the necessary safety
precautions. After use, dispose of as chemical or special waste according to the regulations applying at the location of
the user. It must never be thrown out with the general or domestic waste.

September 1995 2

Philips Semiconductors Product specification

NPN 4 GHz wideband transistor BFQ68

LIMITING VALUES

In accordance with the Absolute Maximum System (IEC 134).

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

V

CBO

V

CEO

V

EBO

I

C

P

tot

T

stg

T

j

THERMAL RESISTANCE

SYMBOL PARAMETER THERMAL RESISTANCE

R

th j-c

collector-base voltage open emitter − 25 V
collector-emitter voltage open base − 18 V
emitter-base voltage open collector − 2V
DC collector current − 300 mA
total power dissipation up to Tc=110°C − 4.5 W
storage temperature −65 150 °C
junction temperature − 200 °C

thermal resistance from junction to case 20 K/W

September 1995 3